Contents
Semiconductors

Vol. 42, No. 9, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Phase Formation and Phase Transformations in Bi–Te Films with Nanoscale Thickness

K. M. Akhmedov p. 1009  abstract

Electronic and Optical Properties of Semiconductors

Relaxation Processes in Conductivity of Cd_1–xMn_xTe Crystals (0.02 < x < 0.55)

E. S. Nikonyuk, Z. I. Zakharuk, M. I. Kuchma, V. L. Shlyakhovy,
A. I. Rarenko, and I. M. Yurichuk p. 1012  abstract

Relaxation of Excited Donor States in Silicon with Emission of Intervalley Phonons

V. V. Tsyplenkov, E. V. Demidov, K. A. Kovalevsky, and V. N. Shastin p. 1016  abstract

Specific Features of Luminescence Spectra of ZnS:O and ZnS:Cu(O) Crystals
in the Context of the Band Anticrossing Theory

N. K. Morozova, D. A. Mideros, V. G. Galstyan, and E. M. Gavrishchuk p. 1023  abstract

Study of Single Crystals of the CuIn₃Se₅ Ternary Compound

I. V. Bodnar’ p. 1030  abstract

Effect of Magnetic Field on the Current–Voltage Characteristic
of the n-GaAs–p-Ge Heterojunction

M. M. Gadjialiev and Z. Sh. Pirmagomedov p. 1034  abstract

Cyclic Behavior of Ultrafast Self-Modulation of the Light-Absorption Spectrum
under Conditions of Pump and Stimulated Emission in GaAs

N. N. Ageeva, I. L. Bronevo, A. N. Krivonosov, and T. A. Nalet p. 1037  abstract

Semiconductor Structures, Interfaces, and Surfaces

Variations in the Impurity Composition and Microhardness of Surface Layers
in Silicon Crystals Caused by a Magnetic Field

V. A. Makara, M. A. Vasiliev, L. P. Steblenko, O. V. Koplak,
A. N. Kurilyuk, Yu. L. Kobzar’, and S. N. Naumenko p. 1044  abstract

Methylthiol Adsorption on GaAs(100)–(2 4) Surface:
Ab Initio Quantum-Chemical Analysis

M. V. Lebedev p. 1048  abstract

Infrared Reflection Spectra of Multilayer Epitaxial Heterostructures
with Embedded InAs and GaAs Layers

P. V. Seredin, É. P. Domashevskaya, A. N. Lukin, I. N. Arsent’ev,
D. A. Vinokurov, and I. S. Tarasov p. 1055  abstract

Influence of Electric Field on the Photoelectric Effect in a Schottky Barrier
Based on n-Type Cadmium Diphosphide

I. G. Stamov and D. V. Tkachenko p. 1062  abstract

Composition and Parameters of Domains Resulting from Spinodal Decomposition
of Quaternary Alloys in Epitaxial GaInP/Ga_xIn_1–xAs_yP_1–y/GaInP/GaAs(001) Heterostructures

E. P. Domashevskaya, N. N. Gordienko, N. A. Rumyantseva, B. L. Agapov,
P. V. Seredin, L. A. Bityutskaya, I. N. Arsent’ev, L. S. Vavilova, and I. S. Tarasov p. 1069  abstract

Low-Dimensional Systems

Baric Properties of InAs Quantum Dots

B. V. Novikov, G. G. Zegrya, R. M. Peleshchak, O. O. Dan’kiv,
V. A. Gaisin, V. G. Talalaev, I. V. Shtrom, and G. E. Cirlin p. 1076  abstract

Electrical and Structural Properties of PHEMT Heterostructures Based
on AlGaAs/InGaAs/AlGaAs and -Doped on Two Sides

I. S. Vasil’evski, G. B. Galiev, E. A. Klimov, V. G. Mokerov,
S. S. Shirokov, R. M. Imamov, and I. A. Subbotin p. 1084  abstract

Edge Luminescence of ZnO Nanorods on High-Intensity Optical Excitation

A. N. Gruzintsev, A. N. Red’kin, E. E. Yakimov, and C. Barthou p. 1092  abstract

Photoluminescence of GeSi/Si Nanoclusters Formed
by Sublimation Molecular-Beam Epitaxy in GeH₄ Medium

D. O. Filatov, M. V. Kruglova, M. A. Isakov, S. V. Siprova,
M. O. Marychev, V. G. Shengurov, V. Yu. Chalkov, and S. A. Denisov p. 1098  abstract

Electron Emission from Multilayer Ensembles of Vertically
Coupled InAs Quantum Dots in an n-GaAs Matrix

A. A. Gutkin, P. N. Brunkov, A. Yu. Egorov, A. E. Zhukov,
and S. G. Konnikov p. 1104  abstract

Magneto-Photoluminescence in a Type-II Broken-Gap
n-GaInAsSb/p–InAs Heterojunction

K. D. Moiseev, M. P. Mikhalova, Yu. P. Yakovlev,
K. A. Korolev, C. Meinning, and B. McCombe p. 1108  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Vibrational Spectroscopy of Amorphous Carbon Modified with Pt

V. I. Ivanov-Omski, T. K. Zvonareva, and G. S. Frolova p. 1113  abstract

Physics of Semiconductor Devices

Specific Features of Use of Wide-Gap Semi-Insulating Materials
for Recording of Nuclear Radiation

A. M. Ivanov, N. B. Strokan, and A. A. Lebedev p. 1117  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Diffusion of Implanted Sodium in Oxygen-Containing Silicon

V. M. Korol’, S. A. Vedenyapin, A. V. Zastavno, and V. Ovchinnikov p. 1122  abstract

Effect of the Ion-Energy Loss Rate on Defect Formation during Implantation in Silicon Nanocrystals

G. A. Kachurin, S. G. Cherkova, D. V. Marin, A. K. Gutakovski, A. G. Cherkov, and V. A. Volodin p. 1127  abstract

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