Contents
Semiconductors

Vol. 39, No. 9, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Formation of Nanostructures in a Ga₂Se₃/GaAs System

N. N. Bezryadin, G. I. Kotov, I. N. Arsent’ev, and A. A. Starodubtsev p. 989  abstract

Electronic and Optical Properties of Semiconductors

Microphotoluminescence of Undoped Single-Crystal Zinc Telluride Produced
by Nonequilibrium Vapor-Phase Growth Techniques

V. V. Ushakov and Yu. V. Klevkov p. 993  abstract

Exact Self-Compensation of Conduction in Cd_0.95Zn_0.05Te:Cl Crystals
in a Wide Range of Cd Vapor Pressures

O. A. Matveev, A. I. Terent’ev, N. K. Zelenina, V. N. Gus’kov, V. E. Sedov,
A. A. Tomasov, and V. P. Karpenko p. 998  abstract

Optical Properties of ZnGeP₂ in the UV Spectral Region

Yu. M. Basalaev, A. B. Gordienko, and A. S. Poplavno p. 1004  abstract

Instability of Drift Waves in Two-Component Solid-State Plasma

A. A. Bulgakov and O. V. Shramkova p. 1007  abstract

Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide
with As–Sb Nanoclusters

P. N. Brunkov, A. A. Gutkin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov,
V. V. Preobrazhenski, M. A. Putyato, and B. R. Semyagin p. 1013  abstract

Study of the Properties of Hg_{1–x–y–z}Cd_xMn_yZn_zTe as a New Infrared Optoelectronic Material

I. N. Gorbatyuk, S. E. Ostapov, S. G. Dremlyuzhenko, R. A. Zaplitny, I. M. Fodchuk,
V. V. Zhikharevich, V. G. Debuk, N. A. Popenko, I. V. Ivanchenko,
A. A. Zhigalov, and S. Yu. Karelin p. 1017  abstract

Transport Coefficients of n-Bi₂Te_2.7Se_0.3 in a Two-Band Model of the Electron Spectrum

P. P. Konstantinov, L. V. Prokof’eva, M. I. Fedorov, D. A. Pshena-Severin,
Yu. I. Ravich, V. V. Kompaniets, and V. A. Chistyakov p. 1023  abstract

Semiconductor Structures, Interfaces, and Surfaces

The Formation of Nanodimensional Structures on the Surface of p-CdTe Crystals Exposed
to a Single Radiation Pulse from a Ruby Laser

A. Badullaeva, A. I. Vlasenko, L. F. Cuzan, O. S. Litvin, and P. E. Mozol’ p. 1028  abstract

Effect of a Submonolayer Metal Film on Band Bending in a Semiconductor Substrate

S. Yu. Davydov and A. V. Pavlyk p. 1032  abstract

Photoelectric Properties of Surface-Barrier Structures Based
on Zn_2–2xCu_xIn_xSe₂ Films Obtained by Selenization

V. Yu. Rud’, Yu. V. Rud’, V. F. Gremenok, E. P. Zaretskaya, and O. N. Sergeeva p. 1035  abstract

Simulation of Special Features of the Drift-Mobility Saturation in Submicrometer Silicon Structures

V. A. Gergel’, Yu. V. Gulyaev, and M. N. Yakupov p. 1040  abstract

Low-Dimensional Systems

Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature
on Photoluminescence in AlGaN/GaN Superlattices and GaN Epitaxial Layers

A. M. Emel’yanov, N. A. Sobolev, E. I. Shek, V. V. Lundin, A. S. Usikov, and E. O. Parshin p. 1045  abstract

A Spin Filter with a Quantum Point Contact in a Dilute Magnetic Semiconductor

S. A. Ignatenko and V. E. Borisenko p. 1048  abstract

The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown
on (100) and (311)A GaAs Substrates

M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov, and A. A. Tonkikh p. 1053  abstract

Electronic Structure of Titanium Disulfide Nanostructures:
Monolayers, Nanostripes, and Nanotubes

V. V. Ivanovskaya, G. Seifert, and A. L. Ivanovski p. 1058  abstract

Exciton States in Semiconductor Spherical Nanostructures

S. I. Pokutnyi p. 1066  abstract

High-Frequency Nonlinear Response of Double-Well Nanostructures

V. F. Elesin and I. Yu. Kateev p. 1071  abstract

Polarization of the Optical Emission of Polaron Excitons in Anisotropic Quantum Dots

A. Yu. Maslov and O. V. Proshina p. 1076  abstract

Physics of Semiconductor Devices

A Millimeter–Submillimeter Phonon-Cooled Hot-Electron Bolometer Mixer Based
on Two-Dimensional Electron Gas in an AlGaAs/GaAs Heterostructure

D. V. Morozov, K. V. Smirnov, A. V. Smirnov, V. A. Lyakhov, and G. N. Goltsman p. 1082  abstract

Semiconductor WGM Lasers for the Mid-IR Spectral Range

V. V. Sherstnev, A. M. Monakhov, A. P. Astakhova, A. Yu. Kislyakova, Yu. P. Yakovlev,
N. S. Averkiev, A. Krier, and G. Hill p. 1087  abstract

Semiconductor–Insulator Structures in the Phototargets of Vidicons Sensitive
in the Middle Infrared Region of the Spectrum

N. F. Kovtonyuk, V. P. Misnik, and A. V. Sokolov p. 1093  abstract

A Mechanism of Electroluminescence in Silicon Diodes with a High Dislocation Density

A. V. Sachenko and Yu. V. Kryuchenko p. 1096  abstract

A Combined Model of a Resonant-Tunneling Diode

I. I. Abramov, I. A. Goncharenko, and N. V. Kolometseva p. 1102  abstract

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.