Contents
Semiconductors

Vol. 37, No. 9, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Review

Semiconductor Photoelectric Converters for the Ultraviolet Region of the Spectrum

T. V. Blank and Yu. A. Gol’dberg p. 999  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

Diffusion of Ytterbium in Silicon

D. É. Nazyrov p. 1031  abstract

Migration Energy of Vacancies in p-Type Silicon Crystals

T. A. Pagava and Z. V. Basheleshvili p. 1033  abstract

Thermal Stability and Transformation of C₆₀ Molecules Deposited
on Silicon-Coated (111) Iridium

N. R. Gall’, E. V. Rut’kov, and A. Ya. Tontegode p. 1037  abstract

Electronic and Optical Properties of Semiconductors

Microphotoluminescence Spectra of Cadmium Telluride Grown
under Nonequilibrium Conditions

V. V. Ushakov and Yu. V. Klevkov p. 1042  abstract

Effect of Growth Conditions on Incorporation of Si into Ga and As Sublattices
of GaAs During Molecular-Beam Epitaxy

I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent’eva, V. V. Preobrazhenski,
M. A. Putyato, B. R. Semyagin, S. V. Subach, and S. E. Toropov p. 1047  abstract

Intervalley Redistribution of Electrons at Low Temperatures and the Magnetodiode Effect

A. A. Abramov and I. N. Gorbaty p. 1053  abstract

Electrical and Thermoelectric Properties of p-Ag₂Te in the Phase

F. F. Aliev p. 1057  abstract

Local Symmetry and Electronic Structure of Tin Atoms in (Pb_1–xSn_x)_1–zIn_zTe Lattices

S. A. Nemov, Yu. V. Kozhanova, P. P. Seregin, N. P. Seregin, and D. V. Shamshur p. 1061  abstract

Phenomena of the Collective Behavior of Autosolitons in a Dissipative Structure in InSb

I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev p. 1063  abstract

On the Nernst Coefficient of Binary Composites in a Weak Magnetic Field

B. Ya. Balagurov p. 1070  abstract

Effect of Electron Irradiation on Optical and Photoelectric Properties
of Microcrystalline Hydrogenated Silicon

A. G. Kazanski, P. A. Forsh, K. Yu. Khabarova, and M. V. Chukichev p. 1076  abstract

Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown
by MOVPE on GaAs(001) Substrates

L. S. Vavilova, D. A. Vinokurov, V. A. Kapitonov, A. V. Murashova, V. N. Nevedomski,
N. K. Poletaev, A. A. Sitnikova, I. S. Tarasov, and V. V. Shamakhov p. 1080  abstract

Semiconductors Structures, Interfaces, and Surfaces

Carrier Multiplication in Silicon P–N Junctions

Yu. N. Serezhkin and A. A. Shesterkina p. 1085  abstract

Low-Dimensional Systems

Dependence of the Binding Energy of A(+) Centers on Quantum-Well Width
in GaAs/AlGaAs Structures

Yu. L. Ivanov, P. V. Petrov, A. A. Tonkikh, G. É. Tsyrlin, and V. M. Ustinov p. 1090  abstract

Scattering of Electrons at Impurity Ions at Low Temperatures in a Superlattice
with Doped Quantum Wells

S. I. Borisenko p. 1093  abstract

Effective Cross Section for Photoluminescence Excitation and Lifetime
of Excited Er³⁺ Ions in Selectively Doped Multilayer Si:Er Structures

S. V. Gastev, A.M. Emel’yanov, N. A. Sobolev, B. A. Andreev,
Z. F. Krasil’nik, and V. B. Shmagin p. 1100  abstract

Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures
with High Electron Mobility Grown on GaAs Substrates

E. S. Semenova, A. E. Zhukov, A. P. Vasil’ev, S. S. Mikhrin, A. R. Kovsh,
V. M. Ustinov, Yu. G. Musikhin, S. A. Blokhin, A. G. Gladyshev, and N. N. Ledentsov p. 1104  abstract

Physics of Semiconductor Devices

Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based
on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells

S. S. Mamakin, A. É. Yunovich, A. B. Wattana, and F. I. Manyakhin p. 1107  abstract

Phase and Structural Changes Stimulated in Multilayer Contacts to n-GaAs
by Rapid Thermal Annealing

N. S. Boltovets, V. N. Ivanov, R. V. Konakova, P. M. Lytvyn, O. S. Lytvyn,
V. V. Milenin, and I. V. Prokopenko p. 1114  abstract

Metamorphic Lasers for 1.3-m Spectral Range Grown on GaAs Substrates by MBE

A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, A. P. Vasil’ev,
E. V. Nikitina, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. M. Shernyakov,
Yu. G. Musikhin, M. V. Maksimov, N. N. Ledentsov, V. M. Ustinov, and Zh. I. Alferov p. 1119  abstract

On the Fast Recovery of the Blocking Property of Silicon Carbide Diodes

I. V. Grekhov, A. S. Kyuregyan, T. T. Mnatsakanov, and S. N. Yurkov p. 1123  abstract

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