Contents
Semiconductors
Vol. 37, No. 9, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Review
Semiconductor Photoelectric Converters for the Ultraviolet Region of the Spectrum
T. V. Blank and Yu. A. Goldberg p. 999 abstract
Atomic Structure and Nonelectronic Properties of Semiconductors
Diffusion of Ytterbium in Silicon
D. É. Nazyrov p. 1031 abstract
Migration Energy of Vacancies in p-Type Silicon Crystals
T. A. Pagava and Z. V. Basheleshvili p. 1033 abstract
Thermal Stability and Transformation of C60 Molecules Deposited
on Silicon-Coated (111) Iridium
N. R. Gall, E. V. Rutkov, and A. Ya. Tontegode p. 1037 abstract
Electronic and Optical Properties of Semiconductors
Microphotoluminescence Spectra of Cadmium Telluride Grown
under Nonequilibrium Conditions
V. V. Ushakov and Yu. V. Klevkov p. 1042 abstract
Effect of Growth Conditions on Incorporation of Si into Ga and As Sublattices
of GaAs During Molecular-Beam Epitaxy
I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, L. G. Lavrenteva, V. V. Preobrazhenski,
M. A. Putyato, B. R. Semyagin, S. V. Subach, and S. E. Toropov p. 1047 abstract
Intervalley Redistribution of Electrons at Low Temperatures and the Magnetodiode Effect
A. A. Abramov and I. N. Gorbatyp. 1053 abstract
Electrical and Thermoelectric Properties of p-Ag2Te in the Phase
F. F. Aliev p. 1057 abstract
Local Symmetry and Electronic Structure of Tin Atoms in (Pb1xSnx)1zInzTe Lattices
S. A. Nemov, Yu. V. Kozhanova, P. P. Seregin, N. P. Seregin, and D. V. Shamshur p. 1061 abstract
Phenomena of the Collective Behavior of Autosolitons in a Dissipative Structure in InSb
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev p. 1063 abstract
On the Nernst Coefficient of Binary Composites in a Weak Magnetic Field
B. Ya. Balagurov p. 1070 abstract
Effect of Electron Irradiation on Optical and Photoelectric Properties
of Microcrystalline Hydrogenated Silicon
A. G. Kazanski, P. A. Forsh, K. Yu. Khabarova, and M. V. Chukichev p. 1076 abstract
Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown
by MOVPE on GaAs(001) Substrates
L. S. Vavilova, D. A. Vinokurov, V. A. Kapitonov, A. V. Murashova, V. N. Nevedomski,
N. K. Poletaev, A. A. Sitnikova, I. S. Tarasov, and V. V. Shamakhov p. 1080 abstract
Semiconductors Structures, Interfaces, and Surfaces
Carrier Multiplication in Silicon PN Junctions
Yu. N. Serezhkin and A. A. Shesterkina p. 1085 abstract
Low-Dimensional Systems
Dependence of the Binding Energy of A(+) Centers on Quantum-Well Width
in GaAs/AlGaAs Structures
Yu. L. Ivanov, P. V. Petrov, A. A. Tonkikh, G. É. Tsyrlin, and V. M. Ustinov p. 1090 abstract
Scattering of Electrons at Impurity Ions at Low Temperatures in a Superlattice
with Doped Quantum Wells
S. I. Borisenko p. 1093 abstract
Effective Cross Section for Photoluminescence Excitation and Lifetime
of Excited Er3+ Ions in Selectively Doped Multilayer Si:Er Structures
S. V. Gastev, A.M. Emelyanov, N. A. Sobolev, B. A. Andreev,
Z. F. Krasilnik, and V. B. Shmagin p. 1100 abstract
Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures
with High Electron Mobility Grown on GaAs Substrates
E. S. Semenova, A. E. Zhukov, A. P. Vasilev, S. S. Mikhrin, A. R. Kovsh,
V. M. Ustinov, Yu. G. Musikhin, S. A. Blokhin, A. G. Gladyshev, and N. N. Ledentsov p. 1104 abstract
Physics of Semiconductor Devices
Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based
on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells
S. S. Mamakin, A. É. Yunovich, A. B. Wattana, and F. I. Manyakhin p. 1107 abstract
Phase and Structural Changes Stimulated in Multilayer Contacts to n-GaAs
by Rapid Thermal Annealing
N. S. Boltovets, V. N. Ivanov, R. V. Konakova, P. M. Lytvyn, O. S. Lytvyn,
V. V. Milenin, and I. V. Prokopenko p. 1114 abstract
Metamorphic Lasers for 1.3-m Spectral Range Grown on GaAs Substrates by MBE
A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, A. P. Vasilev,
E. V. Nikitina, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. M. Shernyakov,
Yu. G. Musikhin, M. V. Maksimov, N. N. Ledentsov, V. M. Ustinov, and Zh. I. Alferov p. 1119 abstract
On the Fast Recovery of the Blocking Property of Silicon Carbide Diodes
I. V. Grekhov, A. S. Kyuregyan, T. T. Mnatsakanov, and S. N. Yurkov p. 1123 abstract
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