Contents
Semiconductors

Vol. 36, No. 9, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Doping of GaAs Layers with Si under Conditions of Low-Temperature Molecular Beam Epitaxy

M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent’eva, V. V. Preobrazhenski,
M. A. Putyato, B. R. Semyagin, S. E. Toropov, and V. V. Chaldyshev p. 953  abstract

Mechanism of Copper Diffusion over the Si(110) Surface

A. E. Dolbak, R. A. Zhachuk, and B. Z. Olshanetsky p. 958  abstract

Electronic and Optical Properties of Semiconductors

Internal Friction and Effective Shear Modulus of Single-Crystal Silicon
in Early Stages of Oxygen Precipitation

V. V. Motskin, A. V. Oleinich-Lysyuck, N. D. Raranski, and I. M. Fodchuk p. 962  abstract

The Temperature and Concentration Dependences of the Charge Carrier Mobility
in PbTe–MnTe Solid Solutions

E. I. Rogacheva and I. M. Krivul’kin p. 966  abstract

Electron–Plasmon Interaction in Acceptor-Doped Bismuth Crystals

N. P. Stepanov and V. M. Grabov p. 971  abstract

Study of Zinc Impurity Atoms in GaP, GaAs, and GaSb ⁶⁷Ga(⁶⁷Zn)
and ⁶⁷Cu(⁶⁷Zn) by Emission Mössbauer Spectroscopy

N. P. Seregin, S. A. Nemov, and S. M. Irkaev p. 975  abstract

Semiconductor Structures, Interfaces, and Surfaces

Cathodoluminescence of ZnO/GaN/-Al₂O₃ Heteroepitaxial Structures Grown
by Chemical Vapor Deposition

M. V. Chukichev, B. M. Ataev, V. V. Mamedov, Ya. I. Alivov, and I. I. Khodos p. 977  abstract

Experimental Observation of Splitting of the Light and Heavy Hole Bands
in Elastically Strained GaAsN

A. Yu. Egorov, E. S. Semenova, V. M. Ustinov, Y. G. Hong, and C. Tu p. 981  abstract

Variations in the Properties of an Implantation-Synthesized Si_xN_y–Si Heterosystem
as a Result of Thermal and Ion-Beam Treatments

V. V. Karzanov, K. A. Markov, V. V. Sdobnyakov, and E. S. Demidov p. 985  abstract

Optical Storage on the Basis of an n-InSb–SiO₂–p-Si Heterostructure

Yu. A. Nikol’ski p. 990  abstract

Field-Dependent Photosensitivity of In–SiO₂–Cd_0.28Hg_0.72Te Metal–Insulator–Semiconductor Structures
with an Opaque Field Electrode

V. V. Vasil’ev, A. F. Kravchenko, and Yu. P. Mashukov p. 993  abstract

Effect of Carrier Localization on the Optical Properties of MBE-Grown GaAsN/GaAs Heterostructures

B. V. Volovik, N. V. Kryzhanovskaya, D. S. Sizov, A. R. Kovsh,
A. F. Tsatsul’nikov, J. Y. Chi, J. S. Wang, L. Wei, and V. M. Ustinov p. 997  abstract

Charge Carrier Transport through the Contact of Metal with a Superconducting Semiconductor

G. V. Kuznetsov p. 1001  abstract

Adsorption and Transformation of C₆₀ Molecules at the (100) Si Surface

N. R. Gall, E. V. Rut’kov, and A. Ya. Tontegode p. 1008  abstract

Low-Dimensional Systems

Stark Effect in Vertically Coupled Quantum Dots in InAs–GaAs Heterostructures

M. M. Sobolev, V. M. Ustinov, A. E. Zhukov, Yu. G. Musikhin, and N. N. Ledentsov p. 1013  abstract

The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions
in Structures with InGaAs Quantum Dots in the GaAs Matrix

D. S. Sizov, M. V. Maksimov, A. F. Tsatsul’nikov, N. A. Cherkashin,
N. V. Kryzhanovskaya, A. B. Zhukov, N. A. Maleev, S. S. Mikhrin,
A. P. Vasil’ev, R. Selin, V. M. Ustinov, N. N. Ledentsov,
D. Bimberg, and Zh. I. Alferov p. 1020  abstract

Amorphous, Vitreous, and Porous Semiconductors

Photoluminescent and Electronic Properties of Nanocrystalline Silicon Doped with Gold

É. B. Kaganovich, I. M. Kizyak, S. I. Kirillova, É. G. Manolov,
V. E. Primachenko, S. V. Svechnikov, and E. F. Venger p. 1027  abstract

Strains and Crystal Lattice Defects Arising in Macroporous Silicon under Oxidation

E. V. Astrova, V. V. Ratnikov, A. D. Remenyuk, and I. L. Shul’pina p. 1033  abstract

Hysteresis of the Photonic Band Gap in VO₂ Photonic Crystal
in the Semiconductor–Metal Phase Transition

V. G. Golubev, D. A. Kurdyukov, A. B. Pevtsov, A. V. Sel’kin,
E. B. Shadrin, A. V. Il’inski, and R. Boeyink p. 1043  abstract

Physics of Semiconductor Devices

Photoelectric Phenomena in ZnO(ITO)/a-Si:H(n)/c-Si(p)/Al Solar Cells

Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, W. Fuhs, and A. Froitzheim p. 1048  abstract

Analysis of High-Frequency Response and Nonlinear Coherent Generation
of Resonance–Tunneling Diodes within a Broad Frequency Range
with Account of Electron–Electron Interaction

V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev p. 1053  abstract

Study of the Potential Distribution in a Forward-Biased Silicon Diode
Using Electrostatic Force Microscopy

A. V. Ankudinov, A. N. Titkov, R. Laiho, and V. A. Kozlov p. 1058  abstract

MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact

P. V. Bulaev, V. A. Kapitonov, A. V. Lutetski, A. A. Marmalyuk,
D. B. Nikitin, D. N. Nikolaev, A. A. Padalitsa, N. A. Pikhtin,
A. D. Bondarev, I. D. Zalevski, and I. S. Tarasov p. 1065  abstract

Personalia

Éduard Mushegovich Kazaryan (on his 60th birthday) p. 1070

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