Vol. 55, No. 9, 2021

Semiconductors

Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers

M. G. Verkholetov and I. A. Prudaev p. 705 abstract

Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells

M. Ya. Vinnichenko, I. S. Makhov, N. Yu. Kharin, S. V. Graf, V. Yu. Panevin, I. V. Sedova, S. V. Sorokin and D. A. Firsov p. 710 abstract

Surface Potential Modeling of DG SOI MoS₂ FET (MFET) and Gate Misalignment Effect Analysis Therein

A. K. Dwivedi, T. Baliyan and S. Tripathi p. 717 abstract

Electron Spin Relaxation and Resonant Cooling of Nuclear Spins in GaAs:Mn Structures

A. E. Evdokimov, M. S. Kuznetsova, A. V. Mikhailov, K. V. Kavokin and R. I. Dzhioev p. 726 abstract

Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO₂(Y) Films with Au Nanoparticles

D. O. Filatov, M. E. Shenina, I. A. Rozhentsov, M. N. Koryazhkina, A. S. Novikov, I. N. Antonov, A. V. Ershov, A. P. Gorshkov and O. N. Gorshkov p. 731 abstract

Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels

N. V. Gaponenko, Yu. D. Karnilava, E. I. Lashkovskaya, V. D. Zhivulko, A. V. Mudryi, Yu. V. Radyush, B. A. Andreev, M. V. Stepikhova, A. N. Yablonskiy, S. A. Gusev, R. Subasri and D. S. Reddy p. 735 abstract

Dependence of the Lasing Spectrum and Self-Mode Locking on the Photonic Band Gap in Class-C Heterolasers with Distributed Feedback of Waves in a Fabry—Perot Cavity

E. R. Kocharovskaya, V. A. Kukushkin, A. V. Mishin, Vl. V. Kocharovsky and V. V. Kocharovsky p. 741 abstract

Method for Forming Films of the β-FeSi₂ Phase by Pulsed Laser Deposition in Vacuum

Yu. M. Kuznetsov, M. V. Dorokhin, A. V. Nezhdanov, D. A. Zdoroveyshchev, V. P. Lesnikov and A. I. Mashin p. 749 abstract

Quantum Transport in a Semiconductor Nanolayer Taking into Account the Surface Scattering of Carriers

I. A. Kuznetsova, O. V. Savenko and D. N. Romanov p. 755 abstract

Electronic States and Persistent Currents in Rings with Inhomogeneous Rashba Spin–Orbit Coupling

G. M. Maksimova, A. R. Zainagutdinov and A. V. Telezhnikov p. 764 abstract

Contents

Semiconductors