Vol. 54, No. 9, 2020

Semiconductors

Fabrication, Treatment, and Testing of Materials and Structures

A Study of the Photoresponse in Graphene Produced by Chemical Vapor Deposition

A. V. Babichev, S. A. Kadinskaya, K. Yu. Shubina, A. A. Vasiliev, A. A. Blokhin, E. I. Moiseev, S. A. Blokhin, I. S. Mukhin, I. A. Eliseyev, V. Yu. Davydov, P. N. Brunkov, N. V. Kryzhanovskaya and A. Yu. Egorov p. 991 abstract

Surfaces, Interfaces, and Thin Films

Comparative Study on Structural, Optical, and Electrical Properties of ZnO Thin Films Prepared by PLD and Sputtering Techniques

H. Naeem-ur-Rehman Khan, M. Mehmood, F. C. C. Ling, A. Faheem Khan and S. M. Ali p. 999 abstract

Study the Properties of Solution Processable CZTS Thin Films Induced by Annealing Treatment: Study of Annealing Time

R. A. Gani Shaikh, S. A. More, G. G. Bisen and S. S. Ghosh p. 1011 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Structural, Optical, and Electrical Studies of Sonochemically Synthesized CuS Nanoparticles

N. Singh and M. Taunk p. 1016 abstract

Physics of Semiconductor Devices

Elemental, Optical, and Electrochemical Study of CH₃NH₃PbI₃ Perovskite-Based Hole Transport Layer-Free Photodiode

J. Chaudhary, S. Choudhary, B. Agrawal and A. S. Verma p. 1023 abstract

Effect of Submicron Structural Parameters on the Performance of a Multi-Diode CMOS Compatible Silicon Avalanche Photodetector

K. Majumder, P. Rakshit and N. Ranjan Das p. 1032 abstract

XXIV International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–13, 2020

Effect of the Boundary Conditions on the High-Frequency Electrical Conductivity of a Thin Conducting Layer in a Longitudinal Magnetic Field

I. V. Kuznetsova, O. V. Savenko and P. A. Kuznetsov p. 1039 abstract

Modification of the Ratio between sp²- to sp³-Hybridized Carbon Components in PECVD Diamond-Like Films

P. A. Yunin, A. I. Okhapkin, M. N. Drozdov, S. A. Korolev, E. A. Arkhipova, S. A. Kraev, Yu. N. Drozdov, V. I. Shashkin and D. B. Radishev p. 1047 abstract

Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe₂

A. K. Kaveev, A. G. Banshchikov, A. N. Terpitskiy, V. A. Golyashov, O. E. Tereshchenko, K. A. Kokh, D. A. Estyunin and A. M. Shikin p. 1051 abstract

Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate

A. I. Okhapkin, P. A. Yunin, E. A. Arkhipova, S. A. Kraev, S. A. Korolyov, M. N. Drozdov and V. I. Shashkin p. 1056 abstract

Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures

Yu. A. Danilov, M. V. Ved’, O. V. Vikhrova, N. V. Dikareva, M. N. Drozdov, B. N. Zvonkov, V. A. Kovalskiy, R. N. Kriukov, A. V. Kudrin, V. P. Lesnikov, P. A. Yunin and A. M. Andreev p. 1059 abstract

Transport Features in the Topological Phase Hg_0.87Cd_0.13Te under Terahertz Photoexcitation

A. V. Galeeva, A. S. Kazakov, A. I. Artamkin, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, L. I. Ryabova and D. R. Khokhlov p. 1064 abstract

Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons

K. V. Maremyanin, V. V. Parshin, E. A. Serov, V. V. Rumyantsev, K. E. Kudryavtsev, A. A. Dubinov, A. P. Fokin, S. S. Morosov, V. Ya. Aleshkin, M. Yu. Glyavin, G. G. Denisov and S. V. Morozov p. 1069 abstract

Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties

R. R. Reznik, V. O. Gridchin, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov and G. E. Cirlin p. 1075 abstract

Terahertz Dispersion and Amplification under Electron Streaming in Graphene at 300 K

A. A. Andronov and V. I. Pozdniakova p. 1078 abstract

Optical and Transport Properties of Epitaxial Pb_0.74Sn_0.26Te(In) Films with a Modifiable Surface

A. V. Ikonnikov, V. S. Dudin, A. I. Artamkin, A. N. Akimov, A. E. Klimov, O. E. Tereshchenko, L. I. Ryabova and D. R. Khokhlov p. 1086 abstract

Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties

G. E. Cirlin, R. R. Reznik, A. E. Zhukov, R. A. Khabibullin, K. V. Maremyanin, V. I. Gavrilenko and S. V. Morozov p. 1092 abstract

Investigation of the Photosensitivity of Narrow-Gap and Gapless HgCdTe Solid Solutions in the Terahertz and Sub-Terahertz Range

V. V. Rumyantsev, K. V. Maremyanin, A. A. Razova, S. M. Sergeev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko and S. V. Morozov p. 1096 abstract

Conductance Quantization in Memristive Structures Based on Poly-p-Xylylene

B. S. Shvetsov, A. A. Minnekhanov, A. A. Nesmelov, M. N. Martyshov, V. V. Rylkov, V. A. Demin and A. V. Emelyanov p. 1103 abstract

Influence of Uniaxial Deformation along the [110] Direction on the Relaxation of Arsenic Shallow Donor States in Germanium

V. V. Tsyplenkov and V. N. Shastin p. 1108 abstract

Multiphonon Relaxation of the 1s(T₂) States of a Singly Ionized Selenium Donor in Silicon

N. A. Bekin p. 1112 abstract

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region

V. V. Utochkin, M. A. Fadeev, S. S. Krishtopenko, V. V. Rumyantsev, V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii and V. I. Gavrilenko p. 1119 abstract

Behavior of Phosphorus Donors in Bulk Single-Crystal Monoisotopic ²⁸Si_1 – _x⁷²Ge_x Alloys

A. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina and N. V. Abrosimov p. 1123 abstract

Electron States of Group-V Donors in Germanium: Variational Calculation Taking into Account the Short-Range Potential

A. A. Revin, A. M. Mikhaylova, A. A. Konakov and V. N. Shastin p. 1127 abstract

Impact of the Potential of Scattering at Radiation-Induced Defects on Carrier Transport in GaAs Structures

I. Yu. Zabavichev, A. S. Puzanov, S. V. Obolenskiy and V. A. Kozlov p. 1134 abstract

Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots

A. I. Khrebtov, A. S. Kulagina, V. V. Danilov, E. S. Gromova, I. D. Skurlov, A. P. Litvin, R. R. Reznik, I. V. Shtrom and G. E. Cirlin p. 1141 abstract

Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates

Yu. N. Drozdov, S. A. Kraev, A. I. Okhapkin, V. M. Daniltsev and E. V. Skorokhodov p. 1147 abstract

Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures

N. K. Chumakov, I. A. Chernykh, A. B. Davydov, I. S. Ezubchenko, Yu. V. Grishchenko, L. L. Lev, I. O. Maiboroda, L. A. Morgun, V. N. Strocov, V. G. Valeyev and M. L. Zanaveskin p. 1150 abstract

Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm

E. A. Tarasova, S. V. Obolensky, S. V. Khazanova, N. N. Grigoryeva, O. L. Golikov, A. B. Ivanov and A. S. Puzanov p. 1155 abstract

Diffraction-Mode Selection in Heterolasers with Planar Bragg Structures

N. S. Ginzburg, A. S. Sergeev, E. R. Kocharovskaya, A. M. Malkin, E. D. Egorova and V. Yu. Zaslavsky p. 1161 abstract

Coherent Spin Dynamics of a Two-Dimensional Electron Gas in the Mode of a Hall Ferromagnet