Contents
Semiconductors

Vol. 35, No. 9, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

This Issue Is Dedicated to the Memory of Anatoli Vasilevich Rzhanov (19202000)

A Scientist, a Mentor, a Soldier

I. G. Neizvestny p. 981  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

Atomic Processes in Semiconductor Crystals

L. S. Smirnov p. 985  abstract

Investigation of Ge Film Growth on the Si(100) Surface by Recording Diffractometry

A. I. Nikiforov, V. A. Cherepanov, and O. P. Pchelyakov p. 988  abstract

Electronic and Optical Properties of Semiconductors

A Study of Galvanomagnetic Phenomena in MBE-Grown n-Cd_xHg_1 –&nbspxTe Films

V. S. Varavin, A. F. Kravchenko, and Yu. G. Sidorov p. 992  abstract

Numerical Simulation of Intrinsic Defects in SiO₂ and Si₃N₄

V. A. Gritsenko, Yu. N. Novikov, A. V. Shaposhnikov, and Yu. N. Morokov p. 997  abstract

Semiconductor Structures, Interfaces, and Surfaces

Oxidation of Semiconductors and the Constitution of Interfaces

S. M. Repinski p. 1006  abstract

Diffusion of Cu over a Clean Si(111) Surface

A. E. Dolbak, R. A. Zhachuk, and B. Z. Olshanetsky p. 1018  abstract

The Simulation of Epitaxy, Sublimation, and Annealing Processes
in a 3D Silicon Surface Layer

A. V. Zverev, I. G. Neizvestny, N. L. Shvarts, and Z. Sh. Yanovitskaya p. 1022  abstract

Properties of Silicon-on-Insulator Structures and Devices

V. P. Popov, A. I. Antonova, A. A. Frantsuzov, L. N. Safronov, G. N. Feofanov,
O. V. Naumova, and D. V. Kilanov p. 1030  abstract

In situ Study of the Interaction of Oxygen with the Si(111) Surface
by Ultrahigh-Vacuum Reflection Electron Microscopy

S. S. Kosolobov, A. L. Aseev, and A. V. Latyshev p. 1038  abstract

Molecular-Beam Epitaxy of Mercury–Cadmium–Telluride Solid Solutions
on Alternative Substrates

Yu. G. Sidorov, S. A. Dvoretski, V. S. Varavin, N. N. Mikhalov,
M. V. Yakushev, and I. V. Sabinina p. 1045  abstract

Epitaxial Growth, Electronic Properties, and Photocathode Applications
of Strained Pseudomorphic InGaAsP/GaAs Layers

V. L. Alperovich, Yu. B. Bolkhovityanov, S. I. Chikichev, A. G. Paulish,
A. S. Terekhov, and A. S. Yaroshevich p. 1054  abstract

Electronic Properties of InAs-Based Metal–Insulator–Semiconductor (MIS) Structures

G. L. Kuryshev, A. P. Kovchavtsev, and N. A. Valisheva p. 1063  abstract

Recombination of Point Defects and Their Interaction with the Surface
in the Course of the Clusterization of these Defects in Si

L. I. Fedina p. 1072  abstract

Low-Dimensional Systems

Spin Response of 2D Electrons to a Lateral Electric Field

L. I. Magarill, A. V. Chaplik, and M. V. Entin p. 1081  abstract

Germanium Quantum Dots in an Unstrained GaAs/ZnSe/Ge/ZnSe Heterosystem

I. G. Neizvestny, S. P. Suprun, A. B. Talochkin, V. N. Shumski, and A. V. Efanov p. 1088  abstract

Type-II Ge/Si Quantum Dots

A. V. Dvurechenskii and A. I. Yakimov p. 1095  abstract

Physics of Semiconductor Devices

Switching Characteristics of Electron-Irradiated MOS-Controlled Thyristors

E. V. Chernyavski, V. P. Popov, Yu. S. Pakhmutov, Yu. I. Krasnikov, and L. N. Safronov p. 1106  abstract

Arrays of 128 128 Photodetectors Based on HgCdTe Layers
and Multilayer Heterostructures with GaAs/AlGaAs Quantum Wells

V. N. Ovsyuk, Yu. G. Sidorov, V. V. Vasil’ev, and V. V. Shashkin p. 1110  abstract

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