Contents
Semiconductors
Vol. 35, No. 9, 2001
Simultaneous
English language translation of the journal is available from
MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors
ISSN 1063-7826.
This
Issue Is Dedicated to the Memory of Anatoli Vasil
evich Rzhanov (1920
2000)
A Scientist, a Mentor, a Soldier
I. G. Neizvestny
p. 981 abstract
Atomic Structure and Nonelectronic Properties of Semiconductors
Atomic Processes in Semiconductor Crystals
L. S. Smirnov p. 985 abstract
Investigation of Ge Film Growth on the Si(100) Surface by Recording Diffractometry
A. I. Nikiforov, V. A. Cherepanov, and O. P. Pchelyakov p. 988 abstract
Electronic and Optical Properties of Semiconductors
A Study of Galvanomagnetic Phenomena in MBE-Grown n-CdxHg1  xTe Films
V. S. Varavin, A. F. Kravchenko, and Yu. G. Sidorov p. 992 abstract
Numerical Simulation of Intrinsic Defects in SiO2 and Si3N4
V. A. Gritsenko, Yu. N. Novikov, A. V. Shaposhnikov, and Yu. N. Morokov p. 997 abstract
Semiconductor Structures, Interfaces, and Surfaces
Oxidation of Semiconductors and the Constitution of Interfaces
S. M. Repinski
p. 1006 abstract
Diffusion of Cu over a Clean Si(111) Surface
A. E. Dolbak, R. A. Zhachuk, and B. Z. Olshanetsky p. 1018 abstract
The Simulation of
Epitaxy, Sublimation, and Annealing Processes
in a 3D Silicon Surface Layer
A. V. Zverev, I. G. Neizvestny
, N. L. Shvarts, and Z. Sh. Yanovitskaya p. 1022 abstract
Properties of Silicon-on-Insulator Structures and Devices
V. P. Popov, A. I. Antonova, A. A. Frantsuzov, L. N. Safronov, G. N. Feofanov,
O. V. Naumova, and D. V. Kilanov p. 1030 abstract
In situ
Study of the Interaction of Oxygen with the Si(111) Surface
by Ultrahigh-Vacuum Reflection Electron Microscopy
S. S. Kosolobov, A. L. Aseev, and A. V. Latyshev p. 1038 abstract
Molecular-Beam
Epitaxy of MercuryCadmiumTelluride Solid Solutions
on Alternative Substrates
Yu. G. Sidorov, S. A. Dvoretski
, V. S. Varavin, N. N. Mikha
lov,
M. V. Yakushev, and I. V. Sabinina p. 1045 abstract
Epitaxial Growth,
Electronic Properties, and Photocathode Applications
of Strained Pseudomorphic InGaAsP/GaAs Layers
V. L. Alperovich, Yu. B. Bolkhovityanov, S. I. Chikichev, A. G. Paulish,
A. S. Terekhov, and A. S. Yaroshevich p. 1054 abstract
Electronic Properties of InAs-Based MetalInsulatorSemiconductor (MIS) Structures
G. L. Kuryshev, A. P. Kovchavtsev, and N. A. Valisheva p. 1063 abstract
Recombination of
Point Defects and Their Interaction with the Surface
in the Course of the Clusterization of these Defects in Si
L. I. Fedina p. 1072 abstract
Low-Dimensional Systems
Spin Response of 2D Electrons to a Lateral Electric Field
L. I. Magarill, A. V. Chaplik, and M. V. Entin p. 1081 abstract
Germanium Quantum Dots in an Unstrained GaAs/ZnSe/Ge/ZnSe Heterosystem
I. G. Neizvestny
, S. P. Suprun, A. B. Talochkin, V. N. Shumski
, and A. V. Efanov p. 1088 abstract
Type-II Ge/Si Quantum Dots
A. V. Dvurechenskii and A. I. Yakimov p. 1095 abstract
Physics of Semiconductor Devices
Switching Characteristics of Electron-Irradiated MOS-Controlled Thyristors
E. V. Chernyavski
, V. P. Popov, Yu. S. Pakhmutov, Yu. I. Krasnikov, and L. N. Safronov p. 1106 abstract
Arrays of 128 128
Photodetectors Based on HgCdTe Layers
and Multilayer Heterostructures with GaAs/AlGaAs Quantum Wells
V. N. Ovsyuk, Yu. G. Sidorov, V. V. Vasilev, and V. V. Shashkin p. 1110 abstract
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