Contents

Semiconductors


Vol. 52, No. 9, 2018

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.


Spectroscopy, Interaction with Radiation

Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions

E. V. Okulich, V. I. Okulich and D. I. Tetelbaum p. 1091  abstract

Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

E. A. Tolkacheva, V. P. Markevich and L. I. Murin p. 1097  abstract


Surfaces, Interfaces, and Thin Films

Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals

R. K. Yafarov p. 1104  abstract

Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser

P. S. Shkumbatjuk p. 1110  abstract

Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide

A. A. Shiryaev, V. M. Vorotyntsev and E. L. Shobolov p. 1114  abstract

Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films

A. V. Sitnikov, O. V. Zhilova, I. V. Babkina, V. A. Makagonov, Yu. E. Kalinin and O. I. Remizova p. 1118  abstract


Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles

E. Yu. Stovpiaga, D. A. Eurov, D. A. Kurdyukov, A. N. Smirnov, M. A. Yagovkina, D. R. Yakovlev and V. G. Golubev p. 1123  abstract

Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures

M. L. Orlov, N. S. Volkova, N. L. Ivina and L. K. Orlov p. 1129  abstract

Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid

T. S. Kondratenko, M. S. Smirnov, O. V. Ovchinnikov, E. V. Shabunya-Klyachkovskaya, A. S. Matsukovich, A. I. Zvyagin and Y. A. Vinokur p. 1137  abstract

Quantization of the Electromagnetic Field in Three-Dimensional Photonic Structures on the Basis of the Scattering Matrix Formalism (S Quantization)

K. A. Ivanov, A. R. Gubaydullin and M. A. Kaliteevski p. 1145  abstract

Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina, P. A. Kuchinskaya, B. I. Fomin, A. N. Yablonskiy, M. V. Stepikhova, A. V. Novikov and A. V. Dvurechenskii p. 1150  abstract

On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures

E. S. Kolodeznyi, A. S. Kurochkin, S. S. Rochas, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, A. V. Savelyev, A. Yu. Egorov and D. V. Denisov p. 1156  abstract


Amorphous, Vitreous, and Organic Semiconductors

Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System

R. A. Castro, G. I. Grabko and A. A. Kononov p. 1160  abstract


Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide

P. V. Seredin, A. S. Lenshin, A. V. Fedyukin, D. L. Goloshchapov, A. N. Lukin, I. N. Arsentyev and A. V. Zhabotinsky p. 1163  abstract

Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 – xZnxTe Heterojunctions

I. G. Orletskyi, M. I. Ilashchuk, M. N. Solovan, P. D. Maryanchuk, O. A. Parfenyuk, E. V. Maistruk and S. V. Nichyi p. 1171  abstract

On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films

V. A. Volodin, Zhang Rui, G. K. Krivyakin, A. Kh. Antonenko, M. Stoffel, H. Rinnert and M. Vergnat p. 1178  abstract

Effect of Injection Depletion in p-Si–n-(Si2)1 – x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

A. S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov and K. A. Amonov p. 1188  abstract

Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si

M. P. Teplyakov, O. S. Ken, D. N. Goryachev and O. M. Sreseli p. 1193  abstract


Carbon Systems

Intercalation of C60 Fullerene Molecules under Single-Layer Graphene on Molybdenum Carbide

E. V. Rut’kov and N. R. Gall p. 1198  abstract


Physics of Semiconductor Devices

Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method

N. P. Klochko, V. R. Kopach, G. S. Khrypunov, V. E. Korsun, V. M. Lyubov, D. O. Zhadan, A. N. Otchenashko, M. V. Kirichenko and M. G. Khrypunov p. 1203  abstract

GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range

E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, A. A. Pivovarova, N. D. Il’inskaya and Yu. P. Yakovlev p. 1215  abstract

Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells

A. A. Dubinov, V. Ya. Aleshkin and S. V. Morozov p. 1221  abstract


Fabrication, Treatment, and Testing of Materials and Structures

Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method

A. N. Anisimov, A. A. Wolfson and E. N. Mokhov p. 1225  abstract