Vol. 52, No. 9, 2018
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions
p. 1091 abstract
Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals
p. 1097 abstract
Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals
p. 1104 abstract
Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser
p. 1110 abstract
Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide
p. 1114 abstract
Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films
p. 1118 abstract
Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles
p. 1123 abstract
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures
p. 1129 abstract
Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid
p. 1137 abstract
Quantization of the Electromagnetic Field in Three-Dimensional Photonic Structures on the Basis of the Scattering Matrix Formalism (S Quantization)
p. 1145 abstract
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface
p. 1150 abstract
On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures
p. 1156 abstract
Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System
p. 1160 abstract
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide
p. 1163 abstract
Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 – xZnxTe Heterojunctions
p. 1171 abstract
On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films
p. 1178 abstract
Effect of Injection Depletion in p-Si–n-(Si2)1 – x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure
p. 1188 abstract
Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si
p. 1193 abstract
Intercalation of C60 Fullerene Molecules under Single-Layer Graphene on Molybdenum Carbide
p. 1198 abstract
Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method
p. 1203 abstract
GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range
p. 1215 abstract
Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells
p. 1221 abstract
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
p. 1225 abstract