Vol. 50, No. 9, 2016

Semiconductors

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Halogen Diffusion on a Ga-Stabilized ζ-GaAs(001)–(4 × 2) Surface

A. V. Bakulin and S. E. Kulkova p. 1131 abstract

Electronic Properties of Semiconductors

Low-Temperature Conductivity of Gadolinium Sulfides

S. N. Mustafaeva and S. M. Asadov p. 1137 abstract

Electrical Parameters of Polycrystalline Sm_{1 –} _xEu_xS Rare-Earth Semiconductors

V. V. Kaminskii, M. M. Kazanin, M. V. Romanova, G. A. Kamenskaya and N. V. Sharenkova p. 1141 abstract

Temperature Dependence of the Band Gap of the Single-Crystal Compounds In₂S₃ and AgIn₅S₈

I. V. Bodnar p. 1145 abstract

Spectroscopy, Interaction with Radiation

Plasmon–Phonon Coupling in the Infrared Reflectance Spectra of Bi₂Se₃ Films

N. N. Novikova, V. A. Yakovlev and I. V. Kucherenko p. 1151 abstract

Surfaces, Interfaces, and thin Films

Relation between the Structural and Phase Transformations in Titanium-Oxide Films and the Electrical and Photoelectric Properties of TiO₂–Si Structures

V. M. Kalygina, I. M. Egorova, V. A. Novikov, I. A. Prudaev and O. P. Tolbanov p. 1156 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Direct Exchange Between Silicon Nanocrystals and Tunnel Oxide Traps Under Illumination on Single Electron Photodetector

S. Chatbouri, M. Troudi, N. Sghaier, A. Kalboussi, V. Aimez, D. Drouin and A. Souifi p. 1163 abstract

Calculation of the Schottky Barrier and Current–Voltage Characteristics of Metal–Alloy Structures Based on Silicon Carbide

V. I. Altuhov, I. S. Kasyanenko, A. V. Sankin, B. A. Bilalov and A. S. Sigov p. 1168 abstract

On the Fractal Nature of Light-Emitting Structures Based on III–N Nanomaterials and Related Phenomena

V. N. Petrov, V. G. Sidorov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, H. Helava and Yu. N. Makarov p. 1173 abstract

Optical Properties of Hybrid Quantum-Confined Structures with High Absorbance

A. M. Nadtochiy, N. A. Kalyuzhnyy, S. A. Mintairov, A. S. Payusov, S. S. Rouvimov, M. V. Maximov and A. E. Zhukov p. 1180 abstract

Optical Properties of InGaAs/InGaAlAs Quantum Wells for the 1520–1580 nm Spectral Range

A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, D. V. Denisov, S. A. Blokhin, A. A. Blokhin, A. M. Nadtochiy, A. S. Kurochkin and A. Yu. Egorov p. 1186 abstract

Amorphous, Vitreous, and Organic Semiconductors

Photoluminescence Spectra of Thin Films of ZnTPP–C₆₀ and CuTPP–C₆₀ Molecular Complexes

M. A. Elistratova, I. B. Zakharova, N. M. Romanov, V. Yu. Panevin and O. E. Kvyatkovskii p. 1191 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Laser Sintering of a TiO₂ Nanoporous Film on a Flexible Substrate for Application in Solar Cells

S. P. Malyukov, A. V. Sayenko and I. A. Kirichenko p. 1198 abstract

Dielectric Properties of Layered FeGaInS₄ Single Crystals in an Alternating Electric Field

F. M. Mammadov and N. N. Niftiyev p. 1203 abstract

Terahertz Response of DNA Oligonucleotides on the Surface of Silicon Nanostructures

N. T. Bagraev, A. L. Chernev, L. E. Klyachkin, A. M. Malyarenko, A. K. Emel’yanov and M. V. Dubina p. 1208 abstract

Physics of Semiconductor Devices

On Methods of Determining the Band Gap of Semiconductor Structures with p–n Junctions

I. M. Vikulin, B. V. Korobitsyn and S. K. Kriskiv p. 1216 abstract

Photovoltaic Laser-Power Converter Based on AlGaAs/GaAs Heterostructures

V. P. Khvostikov, N. A. Kalyuzhnyy, S. A. Mintairov, S. V. Sorokina, N. S. Potapovich, V. M. Emelyanov, N. Kh. Timoshina and V. M. Andreev p. 1220 abstract

On the Problem of Internal Optical Loss and Current Leakage in Laser Heterostructures Based on AlGaInAs/InP Solid Solutions

D. A. Veselov, I. S. Shashkin, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, M. G. Rastegaeva, S. O. Slipchenko, E. A. Bechvay, V. A. Strelets, V. V. Shamakhov and I. S. Tarasov p. 1225 abstract

Synthesis and Study of Thin TiO₂ Films Doped with Silver Nanoparticles for the Antireflection Coatings and Transparent Contacts of Photovoltaic Converters

L. S. Lunin, M. L. Lunina, A. A. Kravtsov, I. A. Sysoev and A. V. Blinov p. 1231 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Formation of the Low-Resistivity Compound Cu₃Ge by Low-Temperature Treatment in an Atomic Hydrogen Flux

E. V. Erofeev, A. I. Kazimirov, I. V. Fedin and V. A. Kagadei p. 1236 abstract

Epitaxial Growth of GaN/AlN/InAlN Heterostructures for HEMTs in Horizontal MOCVD Reactors with Different Designs

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, M. A. Yagovkina, V. M. Ustinov and N. A. Cherkashin p. 1241 abstract

Conditions of Growth of High-Quality Relaxed Si_{1 –} _xGe_x Layers with a High Ge Content by the Vapor-Phase Decomposition of Monogermane on a Sublimating Si Hot Wire

V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, S. A. Matveev, A. V. Nezhdanov, A. I. Mashin, D. O. Filatov, M. V. Stepikhova and Z. F. Krasilnik p. 1248 abstract

Synthesis of ZnO-Based Nanostructures for Heterostructure Photovoltaic Cells

N. A. Lashkova, A. I. Maximov, A. A. Ryabko, A. A. Bobkov, V. A. Moshnikov and E. I. Terukov p. 1254 abstract

Growth Features and Spectroscopic Structure Investigations of Nanoprofiled AlN Films Formed on Misoriented GaAs Substrates

P. V. Seredin, D. L. Goloshchapov, A. S. Lenshin, A. N. Lukin, A. V. Fedyukin, I. N. Arsentyev, A. D. Bondarev, Y. V. Lubyanskiy and I. S. Tarasov p. 1261 abstract

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