Contents
Semiconductors

Vol. 47, No. 9, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Electrical and Optical Properties of Mn-Doped Hg₃In₂Te₆ Crystals

O. G. Grushka, S. M. Chupyra, O. M. Mysliuk, S. V. Bilichuk, and D. P. Koziarskyi p. 1141  abstract

Features of Conduction Mechanisms in n-HfNiSn Semiconductor Heavily Doped
with a Rh Acceptor Impurity

V. A. Romaka, P. Rogl, Yu. V. Stadnyk, V. V. Romaka,
E. K. Hlil, V. Ya. Krajovskii, and A. M. Horyn p. 1145  abstract

Excitonic Structure Formation in the Photoconductivity Spectra
of CdS Crystals at Modulated Excitation

A. S. Batyrev, R. A. Bisengaliev, B. V. Novikov, and M. O. Tagirov p. 1153  abstract

Surfaces, Interfaces, and Thin Films

Quantum Self-Consistent Calculation of the Differential Capacitance
of a Semiconductor Film

D. E. Tsurikov and A. M. Yafyasov p. 1157  abstract

Electrical Properties of Zinc-Sulfide Films Produced by Close-Spaced Vacuum Sublimation

D. I. Kurbatov p. 1164  abstract

Local Triboelectrification of an n-GaAs Surface Using the Tip
of an Atomic-Force Microscope

P. N. Brunkov, V. V. Goncharov, M. E. Rudinsky, A. A. Gutkin, N. Yu. Gordeev,
V. M. Lantratov, N. A. Kalyuzhnyy, S. A. Mintairov, R. V. Sokolov, and S. G. Konnikov p. 1170  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Electrical and Photoelectric Properties of Anisotype n-TiN/p-Si Heterojunctions

M. M. Solovan, V. V. Brus, and P. D. Maryanchuk p. 1174  abstract

Formation Mechanism of Contact Resistance to III–N Heterostructures
with a High Dislocation Density

A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev,
L. M. Kapitanchuk, V. P. Klad’ko, R. V. Konakova, Ya. Ya. Kudryk,
A. V. Naumov, V. N. Panteleev, and V. N. Sheremet p. 1180  abstract

Electron Microscopy of GaAs-Based Structures with InAs
and As Quantum Dots Separated by an AlAs Barrier

V. N. Nevedomskiy, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskiy,
M. A. Putyato, and B. R. Semyagin p. 1185  abstract

Emission Intensity in the Visible and IR Spectral Ranges from Si-based Structures Formed
by Direct Bonding with Simultaneous Doping with Erbium (Er) and Europium (Eu)

M. M. Mezdrogina, L. S. Kostina, E. I. Beliakova, and R. V. Kuzmin p. 1193  abstract

Atomic-Force Microscopy and Photoluminescence of Nanostructured CdTe

V. Babentsov, F. Sizov, J. Franc, A. Luchenko, E. Svezhentsova, and Z. Tsybrii p. 1198  abstract

Electrical and Optical Properties of Near-Surface AlGaAs/InGaAs/AlGaAs Quantum Wells
with Different Quantum-Well Depths

R. A. Khabibullin, G. B. Galiev, E. A. Klimov, D. S. Ponomarev,
I. S. Vasil’evskii, V. A. Kulbachinskii, P. Yu. Bokov, L. P. Avakyants,
A. V. Chervyakov, and P. P. Maltsev p.1203  abstract

Photocurrent in a Quantum Channel with an Impurity

V. A. Margulis, M. A. Pyataev, and S. N. Ulyanov p. 1209  abstract

Suppression of Electron Magnetotunneling between Parallel Two-Dimensional
GaAs/InAs Electron Systems by the Correlation Interaction

Yu. N. Khanin, E. E. Vdovin, O. Makarovsky, and M. Henini p. 1215  abstract

Emission Properties of Heterostructures with a (GaAsSb–InGaAs)/GaAs
Bilayer Quantum Well

B. N. Zvonkov, S. M. Nekorkin, O. V. Vikhrova, and N. V. Dikareva p. 1219  abstract

Analytical One-Dimensional Current–Voltage Model for FD SOI MOSFETs
Including the Effect of Substrate Depletion

Rahul Pandey and Aloke K. Dutta p. 1224  abstract

Optical Orientation of Electrons in Compensated Semiconductors

I. A. Kokurin, P. V. Petrov, and N. S. Averkiev p. 1232  abstract

Anisotropy of the Electron g factor in Quantum Wells Based on Cubic Semiconductors

P. S. Alekseev p. 1241  abstract

Carbon Systems

Effect of Electromagnetic Radiation on an Array of Weakly Interacting Carbon Nanotubes
in the Presence of Nanosecond Pulses

N. R. Sadykov, N. A. Scorkin, and E. A. Akhljustina p. 1246  abstract

Physics of Semiconductor Devices

Analysis of Light-Induced Degradation Mechanisms in -Si:H/c-Si:H Solar Photovoltaics

V. M. Emelyanov, A. S. Abramov, A. V. Bobyl, V. N. Verbitsky, A. S. Gudovskikh,
E. M. Ershenko, S. A. Kudryashov, E. I. Terukov, O. I. Chosta, and M. Z. Shvarts p. 1252  abstract

High-Temperature Luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb
Light-Emitting Heterostructure with a High Potential Barrier

A. A. Petukhov, B. E. Zhurtanov, K. V. Kalinina, N. D. Stoyanov,
H. M. Salikhov, M. P. Mikhailova, and Yu. P. Yakovlev p. 1258  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Properties of Silicon Films Grown under Different Pressures in a Plasma-Forming System

D. M. Mitin and A. A. Serdobintsev p. 1264  abstract

Comparative Study of 3C-SiC Layers Sublimation-Grown on a 6H-SiC Substrate

D. B. Shustov, A. A. Lebedev, S. P. Lebedev, D. K. Nelson,
A. A. Sitnikova, and M. V. Zamoryanskaya p. 1267  abstract

Influence of the Fabrication Conditions of Polymorphous Silicon Films
on Their Structural, Electrical and Optical Properties

M. V. Khenkin, A. V. Emelyanov, A. G. Kazanskii, P. A. Forsh,
P. K. Kashkarov, E. I. Terukov, D. L. Orekhov, and P. Roca i Cabarrocas p. 1271  abstract

Structural Transformation of Macroporous Silicon Anodes as a Result
of Cyclic Lithiation Processes

G. V. Li, T. L. Kulova, V. A. Tolmachev, A. V. Chernienko,
M. A. Baranov, S. I. Pavlov, E. V. Astrova, and A. M. Skundin p.1275  abstract

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