Contents
Semiconductors

Vol. 45, No. 9, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Investigation of Energy Levels of Er-Impurity Centers in Si by the Method
of Ballistic Electron Emission Spectroscopy

D. O. Filatov, I. A. Zimovets, M. A. Isakov, V. P. Kuznetsov, and A. V. Kornaukhov p. 1111  abstract

Pyroelectric Properties of AlN Wide-Gap Semiconductor
in the Temperature Range of 4.2–300 K

Yu. V. Shaldin and S. Matyjasik p. 1117  abstract

Defect Structure of Cd_xHg_1–xTe Films Grown by Liquid-Phase Epitaxy,
Studied by Means of Low-Energy Ion Treatment

I. I. Izhnin, A. I. Izhnin, E. I. Fitsych, N. A. Smirnova, I. A. Denisov,
M. Pociask, and K. D. Mynbaev p. 1124  abstract

Effect of Iron Impurities on the Photoluminescence and Photoconductivity
of ZnSe Crystals in the Visible Spectral Region

Yu. F. Vaksman, Yu. A. Nitsuk, V. V. Yatsun, A. S. Nasibov, and P. V. Shapkin p. 1129  abstract

Spectroscopy, Interaction with Radiation

Effect of Microwave Irradiation on the Photoluminescence
of Bound Excitons in CdTe:Cl Single Crystals

D. V. Korbutyak, A. P. Lotsko, N. D. Vakhnyak, L. A. Demchuna, R. V. Konakova,
V. V. Milenin, and R. A. Red’ko p. 1133  abstract

Photoluminescence in Silicon Implanted with Silicon Ions at Amorphizing Doses

N. A. Sobolev, A. E. Kalyadin, R. N. Kyutt, V. I. Sakharov, I. T. Serenkov,
E. I. Shek, V. V. Afrosimov, and D. I. Tetel’baum p. 1140  abstract

Conductivity Compensation in p-6H-SiC in Irradiation with 8-MeV Protons

A. A. Lebedev, V. V. Kozlovski, S. V. Belov, E. V. Bogdanova, and G. A. Oganesyan p. 1145  abstract

Surfaces, Interfaces, and Thin Films

Influence of Annealing on the Metal/Semiconductor Contacts Deposited
on Sulfur-Treated n-GaAs Surface

E. V. Erofeev and V. A. Kagadei p. 1148  abstract

Protonic Metallization of the Monoclinic Phase in VO₂ Films

A. V. Ilinskiy, O. E. Kvashenkina, and E. B. Shadrin p. 1153  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Interrelation of the Construction of the Metamorphic InAlAs/InGaAs Nanoheterostructures
with the InAs Content in the Active Layer of 76–100%
with Their Surface Morphology and Electrical Properties

I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, A. L. Kvanin,
S. S. Pushkarev, and M. A. Pushkin p. 1158  abstract

Optical Properties of Quantum-Confined Heterostructures Based
on GaP_xN_yAs_1–x–y Alloys

A. Yu. Egorov, N. V. Kryzhanovskaya, and M. S. Sobolev 1164

Electron Mobility and Drift Velocity in Selectively Doped InAlAs/InGaAs/InAlAs Heterostructures

I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, K. Pozela, J. Pozela, V. Juciene, A. Suziedelis,
N. Zurauskiene, S. Kersulis, and V. Stankevic p. 1169  abstract

Specific Features of Photoluminescence Properties
of Copper-Doped Cadmium Selenide Quantum Dots

G. I. Tselikov, S. G. Dorofeev, P. N. Tananaev, and V. Yu. Timoshenko p. 1173  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Spectra of Optical Parameters in Bulk and Film Amorphous Alloys
of the Se₉₅As₅ System Containing Samarium (Sm) Impurities

N. Z. Djalilov and G. M. Damirov p. 1177  abstract

XANES and IR Spectroscopy Study of the Electronic Structure and Chemical Composition
of Porous Silicon on n- and p-Type Substrates

A. S. Lenshin, V. M. Kashkarov, P. V. Seredin, Yu. M. Spivak, and V. A. Moshnikov p. 1183  abstract

Distribution of CdSe Nanoparticles Synthesized in Porous SiO_x Matrix

Yu. Yu. Bacherikov, I. Z. Indutnyi, O. B. Okhrimenko, S. V. Optasyuk,
P. E. Shepeliavyi, and V. V. Ponamarenko p. 1189  abstract

Thermoelectric Properties of Bismuth Telluride Nanocomposites with Fullerene

V. A. Kulbachinskii, V. G. Kytin, V. D. Blank, S. G. Buga, and M. Yu. Popov p. 1194  abstract

Carbon Systems

Electron States in Single-Layer Graphene Containing Short-Range Defects:
The Potential Separable in the Momentum Representation

S. A. Ktitorov, Yu. I. Kuzmin, and N. E. Firsova p. 1199  abstract

Physics of Semiconductor Devices

An Accurate Polynomial-Based Analytical Charge Control Model for AlGaN/GaN HEMT

Pu Jinrong, Sun Jiuxun, and Zhang Da p. 1205  abstract

Role of Nanoscale AlN and InN for the Microwave Characteristics
of AlGaN/(Al,In)N/GaN-based HEMT

T. R. Lenka and A. K. Panda p. 1211  abstract

A Decrease in Ohmic Losses and an Increase in Power in GaSb Photovoltaic Converters

F. Y. Soldatenkov, S. V. Sorokina, N. Kh. Timoshina, V. P. Khvostikov,
Y. M. Zadiranov, M. G. Rastegaeva, and A. A. Usikova p. 1219  abstract

Diode Lasers Emitting at 1190 nm with a Highly Strained GaInAs Quantum Well
and GaAsP Compensating Layers MOCVD-grown on a GaAs Substrate

D. A. Vinokurov, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, V. V. Shamakhov,
A. D. Bondarev, N. A. Rudova, and I. S. Tarasov p. 1227  abstract

Comparative Investigation of InGaP/GaAs Pseudomorphic Field-Effect Transistors
with Triple Doped-Channel Profiles

Jung-Hui Tsai, Der-Feng Guo, and Wen-Shiung Lour p. 1231  abstract

The Distribution of an Electric Field in p–n Junctions of Silicon Edgeless Detectors

V. K. Eremin, A. S. Naletko, E. M. Verbitskaya, I. V. Eremin, and N. N. Egorov p. 1234  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Synthesis of the Lead, Arsenic, and Bismuth Chalcogenides with Liquid Encapsulation

B. A. Tallerchik, S. B. Boiko, and S. V. Shtelmah p.1242  abstract

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