Contents
Semiconductors

Vol. 44, No. 9, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Propertties of Semiconductors

Analysis of the Phase Diagrams of the CdS–CdSe–CdTe System

V. A. Kuznetsov p. 1117  abstract

Electrical and Optical Properties of Semiconductors

Subterahertz Self-Oscillations of Depletion of Electron Populations
in the Conduction Band of GaAs in the Presence of Pumping
and Intrinsic Stimulated Radiation

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, and A. N. Krivonosov p. 1121  abstract

Features of Reflection Spectra of Single Crystals of Bi₂Te₃–Sb₂Te₃
Solid Solutions in the Region of Plasma Effects

N. P. Stepanov and A. A. Kalashnikov p. 1129  abstract

Differential Method of Analysis of Luminescence Spectra of Semiconductors

A. M. Emel’yanov p. 1134  abstract

Dislocation Electrical Conductivity of Plastically Deformed Natural Diamonds

S. N. Samsonenko, N. D. Samsonenko, and V. I. Timchenko p. 1140  abstract

Negative Magnetoresistance in Silicon with Manganese-Atom Complexes [Mn]₄

M. K. Bakhadirkhanov, K. S. Ayupov, G. H. Mavlyanov, and S. B. Isamov p. 1145  abstract

The Variance Law and Scattering Mechanism of Charge Carriers
in Zn-Doped p-In_0.5Ga_0.5Sb

C. A. Zeynalov, F. F. Aliev, S. Z. Damirova, and B. A. Tairov p. 1149  abstract

Influence of Defects Formed by Fast Reactor Neutrons
on Exciton Luminescence Spectra of Cadmium Sulfide Single Crystals

G. E. Davidyuk, N. S. Bogdanyuk, V. V. Bozhko, A. H. Kevshyn,
V. S. Manzhara, and V. Kaiukauskas p. 1153  abstract

Charge Neutrality Level and Electronic Properties of GaSe under Pressure

V. N. Brudnyi, A. V. Kosobutsky, and S. Yu. Sarkisov p. 1158  abstract

The Nature of Edge Luminescence of CdTe:Mg Diffusion Layers

V. P. Makhniy, V. V. Kosolovskiy, M. M. Slyotov, M. V. Skrypnyk, and A. M. Slyotov p. 1167  abstract

Indirect Interband Transitions in Graphite with a Wide Quasigap

V. V. Sobolev, E. A. Antonov, and V. Val. Sobolev p. 1170  abstract

Semiconductor Structures, Interfaces, and Surfaces

Films of Degenerate Intrinsic Oxides of InSe and In₄Se₃ Semiconductor Crystals

V. M. Katerynchuk and M. Z. Kovalyuk p. 1176  abstract

Electrical Characteristics of the CdTe–n-CdHgTe Structure Fabricated
in a Single Molecular-Beam Epitaxy Process

Yu. P. Mashukov, N. N. Mikhailov, and V. V. Vasilyev 1180

Study of the p-Ge–n-GaAs Heterojunction under Hydrostatic Pressure

M. M. Gadjialiev, Z. Sh. Pirmagomedov, and T. N. Efendieva p. 1185  abstract

Study of the Layer–Substrate Interface in nc-Si–SiO₂–p-Si Structures
with Silicon Quantum Dots by the Method of Temperature Dependences of Photovoltage

E. F. Venger, S. I. Kirillova, N. E. Korsunska, T. R. Stara, L. Yu. Khomenkova,
A. V. Sachenko, Y. Goldstein, E. Savir, and J. Jedrzejewski p. 1187  abstract

Electrical Properties of Thin-Film Structures Formed by Pulsed Laser Deposition
of Au, Ag, Cu, Pd, Pt, W, Zr Metals on n-6H-SiC Crystal

R. I. Romanov, V. V. Zuev, V. Yu. Fominskii, M. V. Demin, and V. V. Grigoriev p. 1192  abstract

Low-Dimensional Systems

X-ray Diffraction Analysis and Scanning Micro-Raman Spectroscopy
of Structural Irregularities and Strains Deep Inside the Multilayered
InGaN/GaN Heterostructure

V. V. Strelchuk, V. P. Kladko, E. A. Avramenko, O.F. Kolomys,
N. V. Safryuk, R. V. Konakova, B. S. Yavich, M. Ya. Valakh,
V. F. Machulin, and A. E. Belyaev p. 1199  abstract

Effect of an AC Electric Field on the Conductance
of Single-Wall Semiconductor-Type Carbon Nanotubes

M. B. Belonenko, S. Yu. Glazov, and N. E. Mescheryakova p. 1211  abstract

The Dependence of the Lasing Threshold in ZnO Nanorods on Their Length

A. N. Gruzintsev, G. A. Emelchenko, A. N. Red’kin,
W. T. Volkov, E. E. Yakimov, and G. Visimberga p. 1217  abstract

An (AlGaAs/GaAs/AlGaAs)₆₀ Resonant Bragg Structure Based
on the Second Quantum-Confinement Level of Heavy-Hole Excitons in Quantum Wells

V. V. Chaldyshev, D. E. Sholohov, and A. P. Vasil’ev p. 1222  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Effect of Oxygen Plasma on the Properties of Tantalum Oxide Films

V. M. Kalygina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova,
M. S. Skakunov, O. P. Tolbanov, A. V. Tyazhev, and T. M. Yaskevich p. 1227  abstract

Physics of Semiconductor Devices

Mode Structure of Laser Emission from ZnO Nanorods with One Metal Mirror

A. N. Gruzintsev, G. A. Emelchenko, A. N. Redkin,
W. T. Volkov, E. E. Yakimov, and G. Visimberga p. 1235  abstract

EBIC Study of Nonradiative Recombination in Silicon LEDs
with Near-Band-Edge Luminescence

E. B. Yakimov and N. A. Sobolev p. 1241  abstract

Gas-Fired Thermophotovoltaic Generator Based on Metallic Emitters and GaSb Cells

A. S. Vlasov, V. P. Khvostikov, S. V. Sorokina, N. A. Potapovich,
V. S. Kalinovskiy, E. P. Rakova, V. M. Andreev, A. V. Bobyl, and G. F. Tereschenko p. 1244  abstract

Conductance Simulation in an a-Si:H Thin-Film Transistor with Schottky Barriers

A. V. Vishnyakov and M. D. Efremov p.1249  abstract

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