Contents
Semiconductors
Vol. 44, No. 9, 2010
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Propertties of Semiconductors
Analysis of the Phase Diagrams of the CdSCdSeCdTe System
V. A. Kuznetsov p. 1117 abstract
Electrical and Optical Properties of Semiconductors
Subterahertz Self-Oscillations of Depletion of Electron Populations
in the Conduction Band of GaAs in the Presence of Pumping
and Intrinsic Stimulated Radiation
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, and A. N. Krivonosov p. 1121 abstract
Features of Reflection Spectra of Single Crystals of Bi2Te3Sb2Te3
Solid Solutions in the Region of Plasma Effects
N. P. Stepanov and A. A. Kalashnikov p. 1129 abstract
Differential Method of Analysis of Luminescence Spectra of Semiconductors
A. M. Emelyanov p. 1134 abstract
Dislocation Electrical Conductivity of Plastically Deformed Natural Diamonds
S. N. Samsonenko, N. D. Samsonenko, and V. I. Timchenko p. 1140 abstract
Negative Magnetoresistance in Silicon with Manganese-Atom Complexes [Mn]4
M. K. Bakhadirkhanov, K. S. Ayupov, G. H. Mavlyanov, and S. B. Isamov p. 1145 abstract
The Variance Law and Scattering Mechanism of Charge Carriers
in Zn-Doped p-In0.5Ga0.5Sb
C. A. Zeynalov, F. F. Aliev, S. Z. Damirova, and B. A. Tairov p. 1149 abstract
Influence of Defects Formed by Fast Reactor Neutrons
on Exciton Luminescence Spectra of Cadmium Sulfide Single Crystals
G. E. Davidyuk, N. S. Bogdanyuk, V. V. Bozhko, A. H. Kevshyn,
V. S. Manzhara, and V. Kaiukauskas p. 1153 abstract
Charge Neutrality Level and Electronic Properties of GaSe under Pressure
V. N. Brudnyi, A. V. Kosobutsky, and S. Yu. Sarkisov p. 1158 abstract
The Nature of Edge Luminescence of CdTe:Mg Diffusion Layers
V. P. Makhniy, V. V. Kosolovskiy, M. M. Slyotov, M. V. Skrypnyk, and A. M. Slyotov p. 1167 abstract
Indirect Interband Transitions in Graphite with a Wide Quasigap
V. V. Sobolev, E. A. Antonov, and V. Val. Sobolev p. 1170 abstract
Semiconductor Structures, Interfaces, and Surfaces
Films of Degenerate Intrinsic Oxides of InSe and In4Se3 Semiconductor Crystals
V. M. Katerynchuk and M. Z. Kovalyuk p. 1176 abstract
Electrical Characteristics of the CdTen-CdHgTe Structure Fabricated
in a Single Molecular-Beam Epitaxy Process
Yu. P. Mashukov, N. N. Mikhailov, and V. V. Vasilyev 1180
Study of the p-Gen-GaAs Heterojunction under Hydrostatic Pressure
M. M. Gadjialiev, Z. Sh. Pirmagomedov, and T. N. Efendieva p. 1185 abstract
Study of the LayerSubstrate Interface in nc-SiSiO2p-Si Structures
with Silicon Quantum Dots by the Method of Temperature Dependences of Photovoltage
E. F. Venger, S. I. Kirillova, N. E. Korsunska, T. R. Stara, L. Yu. Khomenkova,
A. V. Sachenko, Y. Goldstein, E. Savir, and J. Jedrzejewski p. 1187 abstract
Electrical Properties of Thin-Film Structures Formed by Pulsed Laser Deposition
of Au, Ag, Cu, Pd, Pt, W, Zr Metals on n-6H-SiC Crystal
R. I. Romanov, V. V. Zuev, V. Yu. Fominskii, M. V. Demin, and V. V. Grigoriev p. 1192 abstract
Low-Dimensional Systems
X-ray Diffraction Analysis and Scanning Micro-Raman Spectroscopy
of Structural Irregularities and Strains Deep Inside the Multilayered
InGaN/GaN Heterostructure
V. V. Strelchuk, V. P. Kladko, E. A. Avramenko, O.F. Kolomys,
N. V. Safryuk, R. V. Konakova, B. S. Yavich, M. Ya. Valakh,
V. F. Machulin, and A. E. Belyaev p. 1199 abstract
Effect of an AC Electric Field on the Conductance
of Single-Wall Semiconductor-Type Carbon Nanotubes
M. B. Belonenko, S. Yu. Glazov, and N. E. Mescheryakova p. 1211 abstract
The Dependence of the Lasing Threshold in ZnO Nanorods on Their Length
A. N. Gruzintsev, G. A. Emelchenko, A. N. Redkin,
W. T. Volkov, E. E. Yakimov, and G. Visimberga p. 1217 abstract
An (AlGaAs/GaAs/AlGaAs)60 Resonant Bragg Structure Based
on the Second Quantum-Confinement Level of Heavy-Hole Excitons in Quantum Wells
V. V. Chaldyshev, D. E. Sholohov, and A. P. Vasilev p. 1222 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Effect of Oxygen Plasma on the Properties of Tantalum Oxide Films
V. M. Kalygina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova,
M. S. Skakunov, O. P. Tolbanov, A. V. Tyazhev, and T. M. Yaskevich p. 1227 abstract
Physics of Semiconductor Devices
Mode Structure of Laser Emission from ZnO Nanorods with One Metal Mirror
A. N. Gruzintsev, G. A. Emelchenko, A. N. Redkin,
W. T. Volkov, E. E. Yakimov, and G. Visimberga p. 1235 abstract
EBIC Study of Nonradiative Recombination in Silicon LEDs
with Near-Band-Edge Luminescence
E. B. Yakimov and N. A. Sobolev p. 1241 abstract
Gas-Fired Thermophotovoltaic Generator Based on Metallic Emitters and GaSb Cells
A. S. Vlasov, V. P. Khvostikov, S. V. Sorokina, N. A. Potapovich,
V. S. Kalinovskiy, E. P. Rakova, V. M. Andreev, A. V. Bobyl, and G. F. Tereschenko p. 1244 abstract
Conductance Simulation in an a-Si:H Thin-Film Transistor with Schottky Barriers
A. V. Vishnyakov and M. D. Efremov p.1249 abstract
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