Contents
Semiconductors

Vol. 41, No. 8, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

The 8th International Workshop on Beam Injection Assessment
of Microstructures in Semiconductors,
June 11–14, 2006, St. Petersburg, Russia

Simulation of the Fluctuations of Energy and Charge Deposited during e-Beam Exposure

S. S. Borisov, S. I. Zaitsev, and E. A. Grachev p. 877  abstract

Cathodoluminescence Studies of C₆₀ Fullerene-Based Films and Nanostructures

A. V. Nashchekin, S. V. Baryshev, R. V. Sokolov, and O. A. Usov p. 879  abstract

Method for Extracting of EXAFS Oscillation Function Based on the Variation Principle

M. D. Sharkov, K. Ju. Pogrebitsky, and S. G. Konnikov p. 882  abstract

Electronic and Optical Properties of Semiconductors

Temperature Dependence of the Band Structure of ZnS, ZnSe, ZnTe,
and CdTe Wurtzite-Type Semiconductor Compounds

T. V. Gorkavenko, S. M. Zubkova, V. A. Makara, and L. N. Rusina p. 886  abstract

Deformation Potential Constants of Deep Impurity Centers
in Semiconductors with Anisotropic Valence Band

E. B. Osipov, N. A. Osipova, M. E. Mokina, S. N. Tsvetkova, and S. D. Kangliev p. 897  abstract

Correction of the Method of Current–Voltage Characteristics for Determination
of Density of Surface States in the System of Germanium–Rare-Earth Element Fluoride

M. B. Shalimova and E. G. Beschasnaya p. 900  abstract

Preparation of ZnO:N Films by Radical Beam Gettering Epitaxy

I. V. Rogozin p. 904  abstract

Picosecond Kinetics of Photoexcited Carriers in Gallium Arsenide
Containing Aluminum Nanoclusters

V. Ya. Aleshkin, N. V. Vostokov, D. M. Gaponova, V. M. Danil’tsev, A. A. Dubinov,
Z. F. Krasil’nik, A. I. Korytin, D. I. Kuritsyn, D. A. Pryakhin, and V. I. Shashkin p. 909  abstract

Photoluminescence and Composition of Amorphous As₂Se₃ Films Modified
with Er(thd)₃ Complex Compound

V. Kh. Kudoyarova, S. A. Kozyukhin, K. D. Tsendin, and V. M. Lebedev p. 914  abstract

Semiconductor Structures, Interfaces, and Surfaces

Current–Voltage Characteristics of Isotype SiC–SiC Junctions Fabricated
by Direct Wafer Bonding

P. A. Ivanov, L. S. Kostina, A. S. Potapov, T. P. Samsonova,
E. I. Belyakova, T. S. Argunova, and I. V. Grekhov p. 921  abstract

Effect of Atmospheric-Air Pressure on Charge Transport
in Structures with Oxidized Porous Silicon

D. I. Bilenko, O. Ya. Belobrovaya, E. A. Zharkova, D. V. Terin, and E. I. Khasina p. 925  abstract

Low-Dimensional Systems

Determination of the Composition and Strains in Ge_xSi_1 – x-Based Nanostructures
from Raman Spectroscopy Data with Consideration of the Contribution of the Heterointerface

V. A. Volodin, M. D. Efremov, A. I. Yakimov, G. Yu. Mikhalev,
A. I. Nikiforov, and A. V. Dvurechenski p. 930  abstract

Lateral Photoconductivity of Ge/Si Heterostructures with Ge Quantum Dots

S. V. Kondratenko, A. S. Nikolenko, O. V. Vakulenko, S. L. Golovinskiy,
Yu. N. Kozyrev, M. Yu. Rubezhanskaya, and A. I. Vodyanitsky p. 935  abstract

Formation and Optical Properties of CuInTe₂ Nanoparticles in Silicate Matrices

I. V. Bodnar’, V. S. Gurin, N. P. Solove, and A. P. Molochko p. 939  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Allotropic Composition of Amorphous Carbon

S. G. Yastrebov and V. I. Ivanov-Omski p. 946  abstract

Modification of the Properties of Porous Silicon on Adsorption of Iodine Molecules

A. S. Vorontsov, L. A. Osminkina, A. E. Tkachenko, E. A. Konstantinova,
V. G. Elenski, V. Yu. Timoshenko, and P. K. Kashkarov p. 953  abstract

Physics of Semiconductor Devices

A Decrease in the Density of Trapping Centers in Silicon Oxide
as a Result of Radiation–Thermal Treatment

G. M. Voronkova, V. D. Popov, and G. A. Protopopov p. 958  abstract

The Effect of NO₂ Adsorption on Optical and Electrical Properties of Porous Silicon Layers

V. V. Bolotov, I. V. Ponomareva, Yu. A. Sten’kin, and V. E. Kan p. 962  abstract

Instability of Current and N-shaped Current–Voltage Characteristic
in a Silicon p–i–n Diode Subjected to a Magnetic Field

I. K. Kamilov, K. M. Aliev, B. G. Aliev, Kh. O. Ibragimov, and N. S. Abakarova p. 965  abstract

Enhancement of the Raman Scattering in Grooved Silicon Structures

A. V. Zoteev, L. A. Golovan’, E. Yu. Krutkova, A. V. Laktyun’kin, D. A. Mamichev,
P. K. Kashkarov, V. Yu. Timoshenko, E. V. Astrova, and T. S. Perova p. 970  abstract

Cadmium-free Thin-Film Cu(In,Ga)Se₂/(In₂S₃) Heterophotoelements:
Fabrication and Properties

V. B. Zalesski, V. Yu. Rud’, V. F. Gremenok, Yu. V. Rud’, T. R. Leonova,
A. V. Kravchenko, E. P. Zaretskaya, and M. S. Tivanov p. 973  abstract

Effect of Low-Temperature Annealing on Characteristics of SiC Detectors
with Radiation-Induced Defects

A. M. Ivanov, N. B. Strokan, A. V. Sadokhin, and A. A. Lebedev p. 979  abstract

Saturation of Light–Current Characteristics of High-Power Laser Diodes
( = 1.0–1.8 m) Under Pulse Operation

D. A. Vinokurov, V. A. Kapitonov A. V. Lyutetski, N. A. Pikhtin,
S. O. Slipchenko, Z. N. Sokolova. A. L. Stankevich, M. A. Khomylev,
V. V. Shamakhov, K. S. Borshchev, I. N. Arsent’ev, and I. S. Tarasov p. 984  abstract

Fabrication, Treatment, and Testing
of Materials and Structures

Electrical Passivation of the Silicon Surface by Organic Monolayers of 1-Octadecene

I. V. Antonova, R. A. Soots, V. A. Seleznev, and V. Ya. Prints p. 991  abstract

Formation of Nanoparticles on the Silicon Surface Under the Effect
of Femtosecond Laser Pulses

S. V. Zabotnov, A. A. Ezhov, L. A. Golovan’, M. A. Lastovkina,
V. I. Panov, V. Yu. Timoshenko, and P. K. Kashkarov p. 998  abstract

Personalia

Leonid Stepanovich Smirnov (dedicated to his 75th birthday) p. 1002

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