Contents
Semiconductors


Vol. 37, No. 8, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.


The Role of Dmitriframe0 Nikolaevich Nasledov in the Formation and Development
of the Physics and Technology of III–V Semiconductors

O. V. Emel’yanenko, N. M. Kolchanova, M. P. Mikhaframe1lova, and Yu. P. Yakovlev p. 867  abstract


Electronic and Optical Properties of Semiconductors

ESR of Interacting Manganese Centers in Gallium Arsenide

K. F. Shtel’makh, M. P. Korobkov, and I. G. Ozerov p. 872  abstract

Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms
in p-GaInAsSb/p-InAs:Mn Heterostructures

T. S. Lagunova, T. I. Voronina, M. P. Mikhaframe2lova, K. D. Moiseev, E. Samokhin,
and Yu. P. Yakovlev
p. 876  abstract

Analysis of the Emission Band of VGaTeAs Complexes in n-GaAs under Uniaxial Pressure

A. A. Gutkin and A. V. Ermakova p. 884  abstract

A Mössbauer Study of Fe Impurity Atoms in Gallium Arsenide

P. P. Seregin, T. R. Stepanova, Yu. V. Kozhanova, and V. P. Volkov p. 889  abstract

Rare-Earth Elements in the Technology of III–V Compounds and Devices Based
on These Compounds

A. T. Gorelenok, A. V. Kamanin, and N. M. Shmidt p. 894  abstract

Electromagnetic Effect in High-Temperature Superconductivity: 15 Years of Investigations
(1987–2002) at the Department of Experimental Physics of St. Petersburg State
Technical University

A. V. Prikhod’ko p. 915  abstract

The Relaxation of the Neutral State of Manganese in Gallium Arsenide

V. F. Masterov, K. F. Shtel’makh, V. P. Maslov, S. B. Mikhrin, and B. E. Samorukov p. 918  abstract


Semiconductor Structures, Interfaces, and Surfaces

Photosensitive Structures Based on Boron Phosphide Single Crystals

Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, and E. I. Terukov p. 923  abstract

Negative Luminescence at 3.9 m in InGaAsSb-Based Diodes

M. Aframe3daraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyframe4,
N. M. Stus’, and G. N. Talalakin
p. 927  abstract

Wet Chemical Nitridation of (100)GaAs Surface: Effect on Electrical Parameters
of Surface-Barrier Au–Ti/GaAs Structures

T. V. L’vova, V. L. Berkovits, M. S. Dunaevskiframe5, V. M. Lantratov, I. V. Makarenko, and V. P. Ulin p. 931  abstract

On the Charge-Transport Mechanisms in Cr–n-InP and Mo–n-InP Diode Structures

S. V. Slobodchikov, Kh. M. Salikhov, and B. E. Samorukov p. 936  abstract


Low-Dimensional Systems

Raman and Infrared Spectroscopy of GaN Nanocrystals Grown by Chloride-Hydride
Vapor-Phase Epitaxy on Oxidized Silicon

V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, V. A. Fedirko, and D. R. T. Zahn p. 940  abstract


Physics of Semiconductor Devices

Ultraviolet Radiation Photodetectors Based on Structures Consisting of a Metal
and a Wide-Bandgap Semiconductor

T. V. Blank, Yu. A. Gol’dberg, E. V. Kalinina, O. V. Konstantinov, and E. A. Posse p. 944  abstract

High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-m Spectral Range
with a Large-Diameter Active Area

I. A. Andreev, N. D. Il’inskaya, E. V. Kunitsyna, M. P. Mikhaframe6lova, and Yu. P. Yakovlev p. 949  abstract

Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown
by Metal-Organic Vapor-Phase Epitaxy

N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. I. Voronina, T. S. Lagunova,
B. V. Pushnyframe7, and Yu. P. Yakovlev
p. 955  abstract

Single-Mode Fast-Tunable Lasers for Laser-Diode Spectroscopy

A. P. Astakhova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev p. 960  abstract

High-Efficiency LEDs of 1.6–2.4 m Spectral Range for Medical Diagnostics
and Environment Monitoring

N. D. Stoyanov, B. E. Zhurtanov, A. P. Astakhova, A. N. Imenkov, and Yu. P. Yakovlev p. 971  abstract

Special Features of Spontaneous and Coherent Emission of IR Lasers Based
on a Single Type-II Broken-Gap Heterojunction

K. D. Moiseev, M. P. Mikhaframe8lova, and Yu. P. Yakovlev p. 985  abstract


Low-Dimensional Systems

Synchrotron Investigations of an Electron Energy Spectrum in III–V-Based Nanostructures

E. P. Domashevskaya, V. A. Terekhov, V. M. Kashkarov, S. Yu. Turishchev,
S. L. Molodtsov, D. V. Vyalykh, D. A. Vinokurov, V. P. Ulin, M. V. Shishkov,
I. N. Arsent’ev, I. S. Tarasov, and Zh. I. Alferov
p. 992  abstract


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