Nikolaevich Nasledov in the Formation and Development of the Physics and Technology of III–V Semiconductors
Contents
Semiconductors
Vol. 37, No. 8, 2003
Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
The Role of Dmitri Nikolaevich Nasledov in the Formation and Development
of the Physics and Technology of III–V Semiconductors
O. V. Emel’yanenko, N. M. Kolchanova, M. P. Mikhalova, and Yu. P. Yakovlev p. 867 abstract
Electronic and Optical Properties of Semiconductors
ESR of Interacting Manganese Centers in Gallium Arsenide
K. F. Shtel’makh, M. P. Korobkov, and I. G. Ozerov p. 872 abstract
Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms
in p-GaInAsSb/p-InAs:Mn Heterostructures
T. S. Lagunova, T. I. Voronina, M. P. Mikhalova, K. D. Moiseev, E. Samokhin,
and Yu. P. Yakovlev p. 876 abstract
Analysis of the Emission Band of VGaTeAs Complexes in n-GaAs under Uniaxial Pressure
A. A. Gutkin and A. V. Ermakova p. 884 abstract
A Mössbauer Study of Fe Impurity Atoms in Gallium Arsenide
P. P. Seregin, T. R. Stepanova, Yu. V. Kozhanova, and V. P. Volkov p. 889 abstract
Rare-Earth Elements in the Technology of III–V Compounds and Devices Based
on These Compounds
A. T. Gorelenok, A. V. Kamanin, and N. M. Shmidt p. 894 abstract
Electromagnetic Effect in High-Temperature Superconductivity: 15 Years of Investigations
(1987–2002) at the Department of Experimental Physics of St. Petersburg State
Technical University
A. V. Prikhod’ko p. 915 abstract
The Relaxation of the Neutral State of Manganese in Gallium Arsenide
V. F. Masterov†, K. F. Shtel’makh, V. P. Maslov, S. B. Mikhrin, and B. E. Samorukov p. 918 abstract
Semiconductor Structures, Interfaces, and Surfaces
Photosensitive Structures Based on Boron Phosphide Single Crystals
Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, and E. I. Terukov p. 923 abstract
Negative Luminescence at 3.9 
m in InGaAsSb-Based Diodes
M. Adaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remenny
,
N. M. Stus’, and G. N. Talalakin p. 927 abstract
Wet Chemical Nitridation of (100)GaAs Surface: Effect on Electrical Parameters
of Surface-Barrier Au–Ti/GaAs Structures
T. V. L’vova, V. L. Berkovits, M. S. Dunaevski, V. M. Lantratov, I. V. Makarenko, and V. P. Ulin p. 931 abstract
On the Charge-Transport Mechanisms in Cr–n-InP and Mo–n-InP Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, and B. E. Samorukov p. 936 abstract
Low-Dimensional Systems
Raman and Infrared Spectroscopy of GaN Nanocrystals Grown by Chloride-Hydride
Vapor-Phase Epitaxy on Oxidized Silicon
V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, V. A. Fedirko, and D. R. T. Zahn p. 940 abstract
Physics of Semiconductor Devices
Ultraviolet Radiation Photodetectors Based on Structures Consisting of a Metal
and a Wide-Bandgap Semiconductor
T. V. Blank, Yu. A. Gol’dberg, E. V. Kalinina, O. V. Konstantinov, and E. A. Posse p. 944 abstract
High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-m Spectral Range
with a Large-Diameter Active Area
I. A. Andreev, N. D. Il’inskaya, E. V. Kunitsyna, M. P. Mikhalova, and Yu. P. Yakovlev p. 949 abstract
Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown
by Metal-Organic Vapor-Phase Epitaxy
N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. I. Voronina, T. S. Lagunova,
B. V. Pushny, and Yu. P. Yakovlev p. 955 abstract
Single-Mode Fast-Tunable Lasers for Laser-Diode Spectroscopy
A. P. Astakhova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev p. 960 abstract
High-Efficiency LEDs of 1.6–2.4 m Spectral Range for Medical Diagnostics
and Environment Monitoring
N. D. Stoyanov, B. E. Zhurtanov, A. P. Astakhova, A. N. Imenkov, and Yu. P. Yakovlev p. 971 abstract
Special Features of Spontaneous and Coherent Emission of IR Lasers Based
on a Single Type-II Broken-Gap Heterojunction
K. D. Moiseev, M. P. Mikhalova, and Yu. P. Yakovlev p. 985 abstract
Low-Dimensional Systems
Synchrotron Investigations of an Electron Energy Spectrum in III–V-Based Nanostructures
E. P. Domashevskaya, V. A. Terekhov, V. M. Kashkarov, S. Yu. Turishchev,
S. L. Molodtsov, D. V. Vyalykh, D. A. Vinokurov, V. P. Ulin, M. V. Shishkov,
I. N. Arsent’ev, I. S. Tarasov, and Zh. I. Alferov p. 992 abstract
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