Contents
Semiconductors

Vol. 36, No. 8, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs

V. V. Preobrazhenski, M. A. Putyato, and B. R. Semyagin p. 837  abstract

Threshold of Inelastic Strain Formation in Si and GaAs Surface Layers
under Multiple Pulsed Laser Irradiation

S. V. Vintsents, A. V. Zoteev, and G. S. Plotnikov p. 841  abstract

Dissociation Energies of a C_iC_s Complex and the A Center in Silicon

N. I. Boyarkina, S. A. Smagulova, and A. A. Artem’ev p. 845  abstract

Atomic Structure and Nonelectronic Properties

Initial Stages of Growth of Diamond Island Films on Crystalline Silicon

N. A. Feoktistov, V. V. Afanas’ev, V. G. Golubev, S. A. Grudinkin,
S. A. Kukushkin, and V. G. Melekhin p. 848  abstract

Electronic and Optical Properties of Semiconductors

Local Structure of Zinc Impurity Centers in Lead Chalcogenides
and Pb_1–xSn_xTe Solid Solutions

S. A. Nemov and N. P. Seregin p. 852  abstract

Influence of Tellurium Impurity on the Properties
of Ga_1–XIn_XAs_YSb_1–Y (X > 0.22) Solid Solutions

T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko,
M. A. Sipovskaya, and Yu. P. Yakovlev p. 855  abstract

Optical Properties of Bulk and Epitaxial Unordered Ga_xIn_1–xP Semiconductor Alloys

Ya. I. Vyklyuk, V. G. Debuk, and S. V. Zolotarev p. 863  abstract

Electrical and Thermoelectric Properties of p-Ag₂Te

F. F. Aliev, E. M. Kerimova, and S. A. Aliev p. 869  abstract

Photoconductivity of Coarse-Grained CdTe Polycrystals

S. A. Medvedev, Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok, and A. F. Plotnikov p. 874  abstract

Time-Resolved Photoluminescence of Polycrystalline GaN Layers
on Metal Substrates

A. V. Andrianov, K. Yamada, H. Tampo, H. Asahi, V. Yu. Nekrasov,
Z. N. Petrovskaya, O. M. Sreseli, and N. N. Zinov’ev p. 878  abstract

Semiconductor Structures, Interfaces, and Surfaces

Low-Threshold Defect Formation and Modification of Ge Surface Layer
under Elastic and Elastoplastic Pulsed Laser Effects

S. V. Vintsents, V. B. Zaitsev, A. V. Zoteev, G. S. Plotnikov,
A. I. Rodionov, and A. V. Chervyakov p. 883  abstract

Electron Tunneling through a Double Barrier in a Reverse-Biased Metal–Oxide–Silicon Structure

G. G. Kareva, M. I. Vexler, I. V. Grekhov, and A. F. Shulekin p. 889  abstract

Low-Dimensional Systems

Structure of Heterointerfaces and Photoluminescence Properties
of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces:
Comparative Analysis

G. A. Lyubas, N. N. Ledentsov, D. Litvinov, B. R. Semyagin,
I. P. Soshnikov, V. M. Ustinov, V. V. Bolotov, and D. Gerthsen p. 895  abstract

Wavelength of Emission from InGaAsN Quantum Wells as a Function
of Composition of the Quaternary Compound

A. E. Zhukov, A. R. Kovsh, E. S. Semenova, V. M. Ustinov,
L. Wei, J.-S. Wang, and J. Y. Chi p. 899  abstract

Two-Dimensional p–n Junction under Equilibrium Conditions

A. Sh. Achoyan, A. É. Yesayan, É. M. Kazaryan, and S. G. Petrosyan p. 903  abstract

Calculations of the Charge-Carrier Mobility and the Thermoelectric Figure
of Merit for Multiple-Quantum-Well Structures

D. A. Pshena-Severin and Yu. I. Ravich p. 908  abstract

Nonlinear Response and Nonlinear Coherent Generation
in Resonant-Tunneling Diode in a Broad Frequency Range

V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev p. 916  abstract

Anomalies of the Fractional Quantum Hall Effect in a Wide Ballistic Wire

Z. D. Kvon, E. B. Olshanetsky, A. E. Plotnikov, A. I. Toropov, and J. C. Portal p. 921  abstract

Special Features of Electrical Conductivity in a Parabolic Quantum Well in a Magnetic Field

E. P. Sinyavski and R. A. Khamidullin p. 924  abstract

Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures

Yu. L. Ivanov, N. V. Agrinskaya, P. V. Petrov, V. M. Ustinov, and G. É. Tsyrlin p. 929  abstract

One-Dimensional Photonic Crystal Obtained by Vertical Anisotropic Etching of Silicon

V. A. Tolmachev, L. S. Granitsyna, E. N. Vlasova, B. Z. Volchek,
A. V. Nashchekin, A. D. Remenyuk, and E. V. Astrova p. 932  abstract

Amorphous, Vitreous, and Porous Semiconductors

Gamma-Irradiation-Induced Metastable States of Undoped Amorphous Hydrogenated Silicon

M. S. Ablova, G. S. Kulikov, and S. K. Persheev p. 936  abstract

Fabrication and Properties of Amorphous Hydrogenated Boron Carbide Films

A. S. Anan’ev, O. I. Kon’kov, V. M. Lebedev, A. N. Novokhatski,
E. I. Terukov, and I. N. Trapeznikova p. 941  abstract

Physics of Semiconductor Devices

Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics

M. Adaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev,
M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov,
V. V. Kuznetsov, and E. A. Kognovitskaya p. 944  abstract

Personalia

Viktor Il’ich Fistul’ (on his 75th birthday) p. 950

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