Contents

Semiconductors

---

Vol. 60, No. 8, 2026

---

Impact of Inorganic Hole Transport Layers on the Efficiency of Tin-Based Perovskite Solar Cells: a Simulation Study

Kirti Bera, Subrata Pal, and P. V. Kanjariya p. 829  abstract

A Comparative Study of Synthesis and Characterization on La₂FeMnO₆ and La₂NiMnO₆ Double Perovskite Nanoparticles

K. Anjalai, M. Sundararajan, K. Banupriya, S. Revathi, R. S. Rimal Isaac, S. Yuvaraj, Chandra Sekhar Dash, M. Sukumar, Arun Thirumurugan, Gabriela Sandoval Hevia, Sivasankaran Ayyaru, and R. Jothi Ramalingam p. 845  abstract

Heat Capacities Study of Semiconductors CuMX₂ (M = Ga, In; X = S, Se, Te) from the Einstein–Debye Approximation

Z. Dogan and T. Mehmetoglu p. 855  abstract

Effects of Content and i-Layer on the Performance of InGaN-Based Solar Cells

Chaoyu Feng, Danghui Wang, Keliang Liu, Xi Zhao, and Shu Zhao p. 863  abstract

Structural and Electrical Properties of n- and p-type Silicon and Tellurium-doped Silicon after 2 MeV Electron Irradiation

Mannab Tashmetov, Shermakhmat Makhkamov, Normamat Ismatov, Nodimjon Sulaymonov, Sarvar Egamov, Abror Abdaminov, Shavkatjon Nazarmamatov, and Muzaffar Erdonov p. 871  abstract

Atomic-Level Engineering of Silicon Carbide Nanotubes: Structural, Electronic, and Thermal Modulation via Boron and Nitrogen Doping

Jamal A. Talla p. 879  abstract

Synergistic Optimization of Charge Transport Layers for High-Efficiency Pb-Free CsSnI₃ Perovskite Solar Cells

Yunxiang Zhang, Yicheng Sheng, Yuxin Zhang, Zihan Tao, Xinru Wang, Keshun Nie, and Qinfang Zhang p. 890  abstract

Sequential Gate and Field Plate Optimization in N-Polar GaN HEMTs for High Breakdown Voltage and RF Efficiency

B. Mohan, J. Charles Pravin, and P. Harikrishnan p. 907  abstract

---