Vol. 59, No. 8, 2025
Engineering the Future of Transistors: A Detailed Review on the Innovations and Challenges in Uniformly Doped Tunnel Field-Effect Transistors
p. 737 abstract
High-Performance T-Gated GaN-HEMT on Silicon Wafer with Step Graded Strain Relief Layered-InGaN Buffer for Future Power Switching Systems
p. 755 abstract
Effect of Iron Doping on the Structural, Morphological and Optical Properties of Cadmium Sulfide Thin Films Synthesized via Chemical Spray Pyrolysis Technique
p. 765 abstract
Investigation of Multi-Material Barrier GaN-based High Electron Mobility Transistors with Double-Deck Gate Field Plate
p. 773 abstract
Electrochemical Performance of Cobalt Oxide Nanoparticles Synthesized via Anionic Surfactant-assisted Hydrothermal Method
p. 787 abstract
Structural, Optical, and Magnetic Properties of Sm3-Doped Mg-Cd Nanoferrites Synthesized by Citrate Gel-Auto Combustion Technique
p. 797 abstract
Design and Optimization of Normally-OFF High Electron Mobility Transistors with Integrated Back Barrier Layers for Enhanced Efficiency
p. 816 abstract
Electronic Properties of Peanut-Shaped Silicon Carbide Nanotubes: Impact of Curvature and Structural Deformation
p. 826 abstract
Structural and Optical Properties of Cu-TiC Thin Films: a DFT Study
p. 836 abstract
Evaluation and Analysis of the Anti-Magnetic-Field Interference Ability of Si-based Diodes
p. 844 abstract
Оbtaining and Electrophysical Properties of (Ge2)1 – x(GaAs)x Solid Solutions
p. 853 abstract
Resonant Tunneling of Holes in Si0.75Ge0.25/Si Heterostructures with Rashba Spin-orbit Interaction for Spin Filter Application: Effect of in-plane Wave Vector and Barrier Width
p. 858 abstract