Contents

Semiconductors


Vol. 59, No. 8, 2025


Engineering the Future of Transistors: A Detailed Review on the Innovations and Challenges in Uniformly Doped Tunnel Field-Effect Transistors

T. Ranjith Kumar, and G. Lakshmi Priya p. 737  abstract

High-Performance T-Gated GaN-HEMT on Silicon Wafer with Step Graded Strain Relief Layered-InGaN Buffer for Future Power Switching Systems

A. Akshaykranth, J. Ajayan, Sandip Bhattacharya, and Asisa Kumar Panigrahy p. 755  abstract

Effect of Iron Doping on the Structural, Morphological and Optical Properties of Cadmium Sulfide Thin Films Synthesized via Chemical Spray Pyrolysis Technique

Zaid A. Abed, Raghed T. Ahmed, and R. S. Mohammed p. 765  abstract

Investigation of Multi-Material Barrier GaN-based High Electron Mobility Transistors with Double-Deck Gate Field Plate

Pichingla Kharei, Achinta Baidya, Niladri Pratap Maity, and Reshmi Maity p. 773  abstract

Electrochemical Performance of Cobalt Oxide Nanoparticles Synthesized via Anionic Surfactant-assisted Hydrothermal Method

R. Gunaseelan, S. Rajesh, L. Guganathan, S. Suthakaran, A. Dinesh, A. Mani, Manikandan Ayyar, V. Mohanavel, Rajendra P. Patil, Saravanan Sundaram, S. Pravina Mary, V. Karthikeyan, and M. Santhamoorthy p. 787  abstract

Structural, Optical, and Magnetic Properties of Sm3-Doped Mg-Cd Nanoferrites Synthesized by Citrate Gel-Auto Combustion Technique

S. Venu, N. V. Krishna Prasad, G. V. S. S. Sarma, N. Harikumar, K. Chandrababu Naidu, G. Vinod, and D. Ravinder p. 797  abstract

Design and Optimization of Normally-OFF High Electron Mobility Transistors with Integrated Back Barrier Layers for Enhanced Efficiency

Shubham Bougal, Ashish Raman, Ravi Ranjan, and Soumya Sen p. 816  abstract

Electronic Properties of Peanut-Shaped Silicon Carbide Nanotubes: Impact of Curvature and Structural Deformation

Jamal A. Talla, Khaled Al-Khaza’leh, Adel Saad, Mohammad Salem, and Husam El-Nasser p. 826  abstract

Structural and Optical Properties of Cu-TiC Thin Films: a DFT Study

Avishek Roy, Md. Abdul Momin, Sadhan Chandra Das, and Abhijit Majumdar p. 836  abstract

Evaluation and Analysis of the Anti-Magnetic-Field Interference Ability of Si-based Diodes

Xiong He, ZiZhuo Nie, ZiLiang Huang, Ling Cai, BoYan Duan, and LiQing Pan p. 844  abstract

Оbtaining and Electrophysical Properties of (Ge2)1 – x(GaAs)x Solid Solutions

Alijon Razzokov, Amin Saidov, Durdona Koshchanova, Jaloladdin Razzakov, and Rozika Otajonova p. 853  abstract

Resonant Tunneling of Holes in Si0.75Ge0.25/Si Heterostructures with Rashba Spin-orbit Interaction for Spin Filter Application: Effect of in-plane Wave Vector and Barrier Width

K. Balamurugan, G. Rohini, L. Bruno Chandrasekar, and P. Shunmuga Sundaram p. 858  abstract