Vol. 55, No. 8, 2021

Semiconductors

Structural and Electronic Properties of Rippled Graphene with Different Orientations of Stone-Wales Defects: First-Principles Study

J. A. Talla, E. A. Almahmoud, K. Al-Khaza’leh and H. Abu-Farsakh p. 643 abstract

Effect of Adhesive Layers on Photocurrent Enhancement in Near-Infrared Quantum-Dot Photodetectors Coupled with Metal-Nanodisk Arrays

A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, A. V. Dvurechenskii and D. E. Utkin p. 654 abstract

Doping of Carbon Layers Grown by the Pulsed Laser Technique

Yu. A. Danilov, A. V. Alaferdov, O.V. Vikhrova, D. A. Zdoroveyshchev, V. A. Kovalskiy, R. N. Kriukov, Yu. M. Kuznetsov, V. P. Lesnikov, A. V. Nezhdanov and M. N. Drozdov p. 660 abstract

Optical and Electronic Properties of Passivated InP(001) Surfaces

P. A. Dementev, E. V. Dementeva, T. V. Lvova, V. L. Berkovits and M. V. Lebedev p. 667 abstract

Increasing the Power and Radiation Coherence of Wide-Aperture Heterolasers by Optimizing the Width of the Bragg Grating

N. S. Ginzburg, A. S. Sergeev, E. R. Kocharovskaya, A. M. Malkin and V. Yu. Zaslavsky p. 672 abstract

Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy

I. V. Ilkiv, K. P. Kotlyar, D. A. Kirilenko, A. V. Osipov, I. P. Soshnikov, A. N. Terpitsky and G. E. Cirlin p. 678 abstract

Structural Characterization of Pb_0.7Sn_0.3Te Crystalline Topological Insulator Thin Films Grown on Si(111)

A. K. Kaveev, D. N. Bondarenko and O. E. Tereshchenko p. 682 abstract

Infrared (850 nm) Light-Emitting Diodes with Multiple InGaAs Quantum Wells and “Back” Reflector

A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, M. V. Nakhimovich, F. Y. Soldatenkov, M. Z. Shvarts and V. M. Andreev p. 686 abstract

Effect of Complexing Agents on Structural, Morphological, and Optical Properties of Chemically Deposited ZnO Thin Films

A. Raidou p. 691 abstract

Rippling Effect on the Electrical Properties of Boron Nitride Monolayer: Density Functional Theory

J. A. Talla, E. A. Almahmoud and H. Abu-Farsakh p. 696 abstract

Contents

Semiconductors