Contents
Semiconductors
Vol. 35, No. 8, 2001
Simultaneous
English language translation of the journal is available from
MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors
ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Growth of Fractal Lithium Clusters in Germanium
S. V. Bulyarski
, V. V. Svetukhin, O. V. Agafonova, A. G. Grishin, and P. A. Ilin p. 861 abstract
Vibration Modes of Oxygen Dimers in Germanium
V. V. Litvinov, L. I. Murin, L. Lindström, V. P. Markevich, and A. A. Klechko p. 864 abstract
Electronic and Optical Properties of Semiconductors
Effect of
Deviations from Stoichiometry on Electrical Conductivity and
Photoconductivity
of CuInSe2 Crystals
M. A. Abdullaev, Dz. Kh. Magomedova, R. M. Gadzhieva, E. I. Terukov, Yu. A. Nikolaev,
Yu. V. Rud, and P. P. Khokhlachev p. 870 abstract
The Onset of
Double Limiting Cycle in the Impurity-Assisted Electric Breakdown
of a Compensated Semiconductor with a Shorted Hall Voltage
K. M. Jandieri and Z. S. Kachlishvili p. 873 abstract
Preparation and Properties of Isotopically Pure Polycrystalline Silicon
O. N. Godisov, A. K. Kaliteevski
, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov,
M. A. Kaliteevski, and P. S. Kopev p. 877 abstract
Electrical Properties of CdxHg1 xTe/CdZnTe Heterostructures
A. G. Belov, A. I. Belogorokhov, and V. M. Lakeenkov p. 880 abstract
Native and Impurity Defects in ZnSe:In Single Crystals Prepared by Free Growth
Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin p. 883 abstract
Origin of an Absorption Band Peaked at 5560 cm1 and Related to Divacancies in Si1 xGex
Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, N. V. Abrosimov, and W. Schröder p. 890 abstract
Photoluminescence Kinetics in GaAs under the Influence of Surface Acoustic Waves
K. S. Zhuravlev, A. M. Gilinski
, A. V. Tsarev, and A. E. Nikolaenko p. 895 abstract
Optical Band Gap of Cd1 xMnxTe and Zn1 xMnxTe Semiconductors
P. V. Zhukovski
, Ya. Partyka, P. Vengerek, Yu. V. Sidorenko, Yu. A. Shostak, and A. Rodzik p. 900 abstract
The Role of Lead in Growing Ga1 XInXAsYSb1 Y Solid Solutions by Liquid-Phase Epitaxy
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko,
D. A. Vasyukov, and Yu. P. Yakovlev p. 904 abstract
Semiconductor Structures, Interfaces, and Surfaces
Interface States and Deep-Level Centers in Silicon-on-Insulator Structures
I. V. Antonova, J. Stano, D. V. Nikolaev, O. V. Naumova, V. P. Popov, and V. A. Skuratov p. 912 abstract
Simultaneous
Doping of Silicon Layers with Erbium and Oxygen in the Course
of Molecular-Beam Epitaxy
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, G. A. Maksimov, Z. F. Krasilnik,
B. A. Andreev, M. V. Stepikhova, D. V. Shengurov, L. Palmetshofer, and H. Ellmer p. 918 abstract
Pulsed Laser-Stimulated Surface Acoustic Waves in p-CdTe Crystals
A. Ba
dullaeva, A. I. Vlasenko, E. I. Kuznetsov, A. V. Lomovtsev,
P. E. Mozol, and A. B. Smirnov p. 924 abstract
Analysis of Inherent Potential Nonuniformities at the Extrinsic-Semiconductor Surface
V. B. Bondarenko, M. V. Kuzmin, and V. V. Korablev p. 927 abstract
Low-Dimensional Systems
Anisotropy of the
Spatial Distribution of In(Ga)As Quantum Dots in
In(Ga)AsGaAs
Multilayer Heterostructures Studied by X-ray and Synchrotron
Diffraction
and Transmission Electron Microscopy
N. N. Faleev, Yu. G. Musikhin, A. A. Suvorova, A. Yu. Egorov, A. E. Zhukov,
A. R. Kovsh, V. M. Ustinov, M. Tabuchi, and Y. Takeda p. 932 abstract
Optical Properties of Germanium Monolayers on Silicon
T. M. Burbaev, T. N. Zavaritskaya, V. A. Kurbatov, N. N. Melnik, V. A. Tsvetkov,
K. S. Zhuravlev, V. A. Markov, and A. I. Nikiforov p. 941 abstract
Amorphous, Vitreous, and Porous Semiconductors
The Effect of
External Factors on Photoelectric Parameters of Amorphous
Hydrogenated
Silicon in Relation to the Initial Characteristics of the Films
N. Rakhimov, U. Babakhodzhaev, Kh. Mavlyanov, and R. Ikramov p. 947 abstract
Anomalous
Polarization of Raman Scattering by Transverse and Longitudinal
Phonons
in Porous Doped GaAs
V. N. Denisov, B. N. Mavrin, and V. A. Karavanski
p. 949 abstract
Effect of Temperature on Photoconductivity and Its Decay in Microcrystalline Silicon
A. G. Kazanski
, H. Mell, E. I. Terukov, and P. A. Forsh p. 953 abstract
X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne
A. I. Mashin, A. F. Khokhlov, É. P. Domashevskaya, V. A. Terekhov, and N. I. Mashin p. 956 abstract
Physics of Semiconductor Devices
Threshold
Characteristics of = 1.55
m
InGaAsP/InP Heterolasers
G. G. Zegrya, N. A. Pikhtin, G. V. Skrynnikov, S. O. Slipchenko, and I. S. Tarasov p. 962 abstract
An Ionization-Type
Si:S-Based Semiconductor Converter of Infrared Images
with Sensitivity in the Spectral Range of CO2-Laser
Radiation
V. T. Tulanov, Kh. B. Siyabekov, A. Sh. Davletova, and K. A. Ortaeva p. 970 abstract
A Study of
Technological Processes in the Production of High-Power
High-Voltage
Bipolar Transistors Incorporating an Array of Inclusions in the
Collector Region
N. I. Volokobinskaya, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush,
I. V. Falina, and A. S. Yastrebov p. 974 abstract
Errata
Erratum:
Carrier Photoexcitation from Levels in Quantum Dots to
States of the Continuum in Lasing
[Semiconductors 35 (3), 343 (2001)]
L. V. Asryan and R. A. Suris p. 979
Pleiades Publishing home page | journal home page | top
If you have any problems with this server, contact webmaster.