Contents
Semiconductors

Vol. 35, No. 8, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Growth of Fractal Lithium Clusters in Germanium

S. V. Bulyarski, V. V. Svetukhin, O. V. Agafonova, A. G. Grishin, and P. A. Il’in p. 861  abstract

Vibration Modes of Oxygen Dimers in Germanium

V. V. Litvinov, L. I. Murin, L. Lindström, V. P. Markevich, and A. A. Klechko p. 864  abstract

Electronic and Optical Properties of Semiconductors

Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity
of CuInSe₂ Crystals

M. A. Abdullaev, Dz. Kh. Magomedova, R. M. Gadzhieva, E. I. Terukov, Yu. A. Nikolaev,
Yu. V. Rud’, and P. P. Khokhlachev p. 870  abstract

The Onset of Double Limiting Cycle in the Impurity-Assisted Electric Breakdown
of a Compensated Semiconductor with a Shorted Hall Voltage

K. M. Jandieri and Z. S. Kachlishvili p. 873  abstract

Preparation and Properties of Isotopically Pure Polycrystalline Silicon

O. N. Godisov, A. K. Kaliteevski, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov,
M. A. Kaliteevski, and P. S. Kop’ev p. 877  abstract

Electrical Properties of Cd_xHg_{1 – x}Te/CdZnTe Heterostructures

A. G. Belov, A. I. Belogorokhov, and V. M. Lakeenkov p. 880  abstract

Native and Impurity Defects in ZnSe:In Single Crystals Prepared by Free Growth

Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin p. 883  abstract

Origin of an Absorption Band Peaked at 5560 cm^–1 and Related to Divacancies in Si_{1 – x}Ge_x

Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, N. V. Abrosimov, and W. Schröder p. 890  abstract

Photoluminescence Kinetics in GaAs under the Influence of Surface Acoustic Waves

K. S. Zhuravlev, A. M. Gilinski, A. V. Tsarev, and A. E. Nikolaenko p. 895  abstract

Optical Band Gap of Cd_{1 – x}Mn_xTe and Zn_{1 – x}Mn_xTe Semiconductors

P. V. Zhukovski, Ya. Partyka, P. Vengerek, Yu. V. Sidorenko, Yu. A. Shostak, and A. Rodzik p. 900  abstract

The Role of Lead in Growing Ga_{1 – X}In_XAs_YSb_{1 – Y} Solid Solutions by Liquid-Phase Epitaxy

T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko,
D. A. Vasyukov, and Yu. P. Yakovlev p. 904  abstract

Semiconductor Structures, Interfaces, and Surfaces

Interface States and Deep-Level Centers in Silicon-on-Insulator Structures

I. V. Antonova, J. Stano, D. V. Nikolaev, O. V. Naumova, V. P. Popov, and V. A. Skuratov p. 912  abstract

Simultaneous Doping of Silicon Layers with Erbium and Oxygen in the Course
of Molecular-Beam Epitaxy

V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, G. A. Maksimov, Z. F. Krasil’nik,
B. A. Andreev, M. V. Stepikhova, D. V. Shengurov, L. Palmetshofer, and H. Ellmer p. 918  abstract

Pulsed Laser-Stimulated Surface Acoustic Waves in p-CdTe Crystals

A. Badullaeva, A. I. Vlasenko, E. I. Kuznetsov, A. V. Lomovtsev,
P. E. Mozol’, and A. B. Smirnov p. 924  abstract

Analysis of Inherent Potential Nonuniformities at the Extrinsic-Semiconductor Surface

V. B. Bondarenko, M. V. Kuz’min, and V. V. Korablev p. 927  abstract

Low-Dimensional Systems

Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As–GaAs
Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction
and Transmission Electron Microscopy

N. N. Faleev, Yu. G. Musikhin, A. A. Suvorova, A. Yu. Egorov, A. E. Zhukov,
A. R. Kovsh, V. M. Ustinov, M. Tabuchi, and Y. Takeda p. 932  abstract

Optical Properties of Germanium Monolayers on Silicon

T. M. Burbaev, T. N. Zavaritskaya, V. A. Kurbatov, N. N. Mel’nik, V. A. Tsvetkov,
K. S. Zhuravlev, V. A. Markov, and A. I. Nikiforov p. 941  abstract

Amorphous, Vitreous, and Porous Semiconductors

The Effect of External Factors on Photoelectric Parameters of Amorphous Hydrogenated
Silicon in Relation to the Initial Characteristics of the Films

N. Rakhimov, U. Babakhodzhaev, Kh. Mavlyanov, and R. Ikramov p. 947  abstract

Anomalous Polarization of Raman Scattering by Transverse and Longitudinal Phonons
in Porous Doped GaAs

V. N. Denisov, B. N. Mavrin, and V. A. Karavanski p. 949  abstract

Effect of Temperature on Photoconductivity and Its Decay in Microcrystalline Silicon

A. G. Kazanski, H. Mell, E. I. Terukov, and P. A. Forsh p. 953  abstract

X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne

A. I. Mashin, A. F. Khokhlov, É. P. Domashevskaya, V. A. Terekhov, and N. I. Mashin p. 956  abstract

Physics of Semiconductor Devices

Threshold Characteristics of = 1.55 m InGaAsP/InP Heterolasers

G. G. Zegrya, N. A. Pikhtin, G. V. Skrynnikov, S. O. Slipchenko, and I. S. Tarasov p. 962  abstract

An Ionization-Type Si:S-Based Semiconductor Converter of Infrared Images
with Sensitivity in the Spectral Range of CO₂-Laser Radiation

V. T. Tulanov, Kh. B. Siyabekov, A. Sh. Davletova, and K. A. Ortaeva p. 970  abstract

A Study of Technological Processes in the Production of High-Power High-Voltage
Bipolar Transistors Incorporating an Array of Inclusions in the Collector Region

N. I. Volokobinskaya, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush,
I. V. Falina, and A. S. Yastrebov p. 974  abstract

Errata

Erratum: “Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing”
[Semiconductors 35 (3), 343 (2001)]

L. V. Asryan and R. A. Suris p. 979

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