Contents

Semiconductors

Vol. 53, No. 8, 2019

Obituaries

Zhores Ivanovich Alferov (March 15, 1930–March 1, 2019)

p. 1001  abstract

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Diffusion and Interaction of In and As Implanted into SiO2 Films

I. E. Tyschenko, M. Voelskow, A. N. Mikhaylov and D. I. Tetelbaum p. 1004  abstract

Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon

Yu. V. Balakshin, A. V. Kozhemiako, S. Petrovic, M. Erich, A. A. Shemukhin and V. S. Chernysh p. 1011  abstract

Electronic Properties of Semiconductors

Spin–Orbit Interaction and Carrier Mobility in a Longitudinal InSb Autosoliton under a Magnetic Field

I. K. Kamilov, A. A. Stepurenko and A. E. Gummetov p. 1018  abstract

Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals

V. T. Avanesyan, I. V. Piskovatskova and V. M. Stozharov p. 1024  abstract

Some Physical Properties of the New Intermetallic Compound NbCd2

V. N. Volodin, Y. Zh. Tuleushev, E. A. Zhakanbaev, A. A. Migunova and A. B. Nicenko p. 1028  abstract

Surfaces, Interfaces, and Thin Films

Nanostructured ITO/SiO2 Coatings

L. K. Markov, A. S. Pavluchenko and I. P. Smirnova p. 1033  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures

Yu. N. Khanin, E. E. Vdovin, A. Mishchenko and K. S. Novoselov p. 1038  abstract

On the Theory of Plasmon–Excitons: An Estimate of the Coupling Constant and the Optical Spectrum

N. S. Averkiev, A. V. Korotchenkov and V. A. Kosobukin p. 1042  abstract

Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles

D. A. Kurdyukov, N. A. Feoktistov, D. A. Kirilenko, A. N. Smirnov, V. Yu. Davydov and V. G. Golubev p. 1048  abstract

Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment

B. V. Sladkopevtsev, G. I. Kotov, I. N. Arsentyev, I. S. Shashkin, I. Ya. Mittova, E. V. Tomina, A. A. Samsonov and P. V. Kostenko p. 1054  abstract

Dependence of the Spontaneous Luminescence Intensity in ZnO Nanorods on their Length

A. N. Gruzintsev, A. N. Redkin and E. E. Yakimov p. 1060  abstract

Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate

A. N. Aleshin, A. S. Bugaev, O. A. Ruban, V. V. Saraikin, N. Yu. Tabachkova and I. V. Shchetinin p. 1066  abstract

Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition

A. V. Uvarov, K. S. Zelentsov and A. S. Gudovskikh p. 1075  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

On the Synthesis and Photoluminescence and Cathodoluminescence Properties of CdSe, CdTe, PbS, InSb, and GaAs Colloidal Quantum Dots

N. D. Zhukov, D. V. Kryl’skiy, M. I. Shishkin and A. A. Khazanov p. 1082  abstract

Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures

M. L. Lunina, L. S. Lunin, D. L. Alfimova, A. S. Pashchenko, E. M. Danilina and V. V. Nefedov p. 1088  abstract

Relaxation, Thermal, and Interphase Effects in Polymer–Ferroelectric-Piezoelectric Ceramic Composites of Different Structures

M. A. Kurbanov, I. S. Ramazanova, Z. A. Dadashov, F. I. Mamedov, G. Kh. Huseynova, U. V. Yusifova, F. N. Tatardar and I. A. Faraczade p. 1092  abstract

Physics of Semiconductor Devices

Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation

A. E. Zhukov, E. I. Moiseev, N. V. Kryzhanovskaya, S. A. Blokhin, M. M. Kulagina, Yu. A. Guseva, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Mozharov, F. I. Zubov and M. V. Maximov p. 1099  abstract

Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuzmenkov, N. A. Maleev, V. M. Ustinov, E. S. Kolodeznyi, S. S. Rochas, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, K. O. Voropaev, A. S. Ionov and A. Yu. Egorov p. 1104  abstract

Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters

V. P. Khvostikov, N. A. Kalyuzhnyy, S. A. Mintairov, N. S. Potapovich, S. V. Sorokina and M. Z. Shvarts p. 1110  abstract

Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass

S. N. Abolmasov, A. S. Abramov, A. V. Semenov, I. S. Shakhray, E. I. Terukov, E. V. Malchukova and I. N. Trapeznikova p. 1114  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate

P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin, A. M. Mizerov, I. N. Arsentyev, Harald Leiste and Monika Rinke p. 1120  abstract

Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties

S. V. Sorokin, P. S. Avdienko, I. V. Sedova, D. A. Kirilenko, M. A. Yagovkina, A. N. Smirnov, V. Yu. Davydov and S. V. Ivanov p. 1131  abstract

Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Kruglov and D. G. Reunov p. 1138  abstract