Vol. 50, No. 8, 2016

Semiconductors

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Effect of an Increase in the Density of Collision Cascades on the Efficiency of the Generation of Primary Displacements during the Ion Bombardment of Si

K. V. Karabeshkin, P. A. Karaseov and A. I. Titov p. 989 abstract

Electronic Properties of Semiconductors

Temperature Dependence of the Hall Coefficient in the Вi_{1 –} _xSb_x System (x = 0.06, 0.12)

B. A. Tairov, X. A. Gasanova and R. I. Selim-zade p. 996 abstract

Spectroscopy, Interaction with Radiation

Spectra of Low-Temperature Photoluminescence in Thin Polycrystalline CdTe Films

B. Z. Polvonov and N. Kh. Yuldashev p. 1001 abstract

Surfaces, Interfaces, and Thin Films

Study of the Impurity Photoconductivity in p-InSb Using Epitaxial p⁺ Contacts

Sh. O. Eminov p. 1005 abstract

Electrical, Optical, and Photoluminescence Properties of ZnO Films Subjected to Thermal Annealing and Treatment in Hydrogen Plasma

Kh. A. Abdullin, M. T. Gabdullin, L. V. Gritsenko, D. V. Ismailov, Zh. K. Kalkozova, S. E. Kumekov, Zh. O. Mukash, A. Yu. Sazonov and E. I. Terukov p. 1010 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Conduction in Titanium Dioxide Films and Metal–TiO₂–Si Structures

V. M. Kalygina, I. M. Egorova, I. A. Prudaev and O. P. Tolbanov p. 1015 abstract

Electrical and Photoelectric Properties of n-TiN/p-Hg₃In₂Te₆ Heterostructures

M. N. Solovan, A. I. Mostovyi, V. V. Brus, E. V. Maistruk and P. D. Maryanchuk p. 1020 abstract

Room Temperature de Haas–van Alphen Effect in Silicon Nanosandwiches

N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov and V. V. Romanov p. 1025 abstract

Prompt Quality Monitoring of InSe and GaSe Semiconductor Crystals by the Nuclear Quadrupole Resonance Technique

A. P. Samila, G. I. Lastivka, V. A. Khandozhko and Z. D. Kovalyuk p. 1034 abstract

Photoluminescence Kinetics Slowdown in an Ensemble of GaN/AlN Quantum Dots upon Tunneling Interaction with Defects

I. A. Aleksandrov, V. G. Mansurov and K. S. Zhuravlev p. 1038 abstract

Elastic Strains and Delocalized Optical Phonons in AlN/GaN Superlattices

D. V. Pankin, M. B. Smirnov, V. Yu. Davydov, A. N. Smirnov, E. E. Zavarin and W. V. Lundin p. 1043 abstract

Nonequilibrium Chemical Potential in a Two-Dimensional Electron Gas in the Quantum-Hall-Effect Regime

D. A. Pokhabov, A. G. Pogosov, M. V. Budantsev, E. Yu. Zhdanov and A. K. Bakarov p. 1049 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Effect of Uniaxial Deformation on the Current–Voltage Characteristic of a p-Ge/n-GaAs Heterostructure

M. M. Gadzhialiev, Z. Sh. Pirmagomedov and T. N. Efendieva p. 1054 abstract

Carbon Systems

Carrier Velocity Effect on Carbon Nanotube Schottky Contact

Amir Fathi, M. T. Ahmadi and Razali Ismail p. 1056 abstract

Electromagnetic Radiation of Electrons in Corrugated Graphene

S. A. Ktitorov and R. I. Myhamadiarov p. 1060 abstract

Graphene-Oxide Films Printed on Rigid and Flexible Substrates for a Wide Spectrum of Applications

I. V. Antonova, I. A. Kotin, V. I. Popov, F. D. Vasileva, A. N. Kapitonov and S. A. Smagulova p. 1065 abstract

Physics of Semiconductor Devices

Study of the Photoinduced Degradation of Tandem Photovoltaic Converters Based on a-Si:H/μc-Si:H

A. S. Abramov, D. A. Andronikov, K. V. Emtsev, A. V. Kukin, A. V. Semenov, E. E. Terukova, A. S. Titov and S. A. Yakovlev p. 1074 abstract

Dynamic Thermoelectric Model of a Light-Emitting Structure with a Current Spreading Layer

V. A. Sergeev and A. M. Hodakov p. 1079 abstract

Comparison of the Characteristics of Solar Cells Fabricated from Multicrystalline Silicon with those Fabricated from Silicon Obtained by the Monolike Technology

A. A. Betekbaev, B. N. Mukashev, L. Pelissier, P. Lay, G. Fortin, L. Bounaas, D. M. Skakov, D. A. Kalygulov, T. S. Turmagambetov and V. V. Lee p. 1085 abstract

Transition Times between the Extremum Points of the Current–Voltage Characteristic of a Resonant Tunneling Diode with Hysteresis

K. S. Grishakov and V. F. Elesin p. 1092 abstract

Optical Properties of Photodetectors Based on Single GaN Nanowires with a Transparent Graphene Contact

A. V. Babichev, H. Zhang, N. Guan, A. Yu. Egorov, F. H. Julien, A. Messanvi, C. Durand, J. Eymery and M. Tchernycheva p. 1097 abstract

Heterojunction Low-Barrier GaAs Diodes with an Improved Reverse I–V Characteristic

I. V. Yunusov, V. A. Kagadei, A. Y. Fazleeva and V. S. Arykov p. 1102 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Estimation of the Efficiency of the Introduction of a Porous Layer into a Silicon-on-Sapphire Structure Substrate to Enhance the Reliability of Devices under Irradiation

P. A. Aleksandrov, E. K. Baranova and V. V. Budaragin p. 1107 abstract

On a Silicon-Based Photonic-Crystal Cavity for the Near-IR Region: Numerical Simulation and Formation Technology

P. G. Serafimovich, M. V. Stepikhova, N. L. Kazanskiy, S. A. Gusev, A. V. Egorov, E. V. Skorokhodov and Z. F. Krasilnik p. 1112 abstract

On a Two-layer Si₃N₄/SiO₂ Dielectric Mask for Low-Resistance Ohmic Contacts to AlGaN/GaN HEMTs

S. S. Arutyunyan, A. Yu. Pavlov, B. Yu. Pavlov, K. N. Tomosh and Yu. V. Fedorov p. 1117 abstract

Formation of Donors in Germanium–Silicon Alloys Implanted with Hydrogen Ions with Different Energies

Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. P. Markevich, N. V. Abrosimov, A. S. Kamyshan, A. V. Giro and K. A. Solyanikova p. 1122 abstract

Changes in the Conductivity of Lead-Selenide Thin Films after Plasma Etching

S. P. Zimin, I. I. Amirov and V. V. Naumov p. 1125 abstract

Contents