Contents
Semiconductors

Vol. 47, No. 8, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Effect of Temperature and Rare-Earth Doping on Charge-Carrier Mobility
in Indium-Monoselenide Crystals

A. Sh. Abdinov, R. F. Babayeva, S. I. Amirova, and R. M. Rzayev p. 1013  abstract

Spectroscopy, Interaction with Radiation

Optical Properties of Oxygen-Implanted CdS:O Layers in Terms of Band Anticrossing Theory

N. K. Morozova, A. A. Kanakhin, I. N. Miroshnikova, and V. G. Galstyan p. 1018  abstract

Surfaces, Interfaces, and Thin Films

Study of the Effect of the Acid–Base Surface Properties of ZnO, Fe₂O₃
and ZnFe₂O₄ Oxides on their Gas Sensitivity to Ethanol Vapor

S. S. Karpova, V. A. Moshnikov, A. I. Maksimov, S. V. Mjakin, and N. E. Kazantseva p. 1026  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Features of the Stress–Strain State of Si/SiO₂/Ge Heterostructures
with Germanium Nanoislands of a Limited Density

V. V. Kuryliuk and O. A. Korotchenkov p. 1031  abstract

(In,Mn)As Quantum Dots: Molecular-Beam Epitaxy and Optical Properties

A. D. Bouravleuv, V. N. Nevedomskii, E. V. Ubyivovk, V. F. Sapega, A. I. Khrebtov,
Yu. B. Samsonenko, G. E. Cirlin, and V. M. Ustinov p. 1037  abstract

Photoelectric and Luminescence Properties of GaSb-Based Nanoheterostructures with a Deep
Al(As)Sb/InAsSb/Al(As)Sb Quantum Well Grown by Metalorganic Vapor-Phase Epitaxy

M. P. Mikhailova, I. A. Andreev, E. V. Ivanov, G. G. Konovalov, E. A. Grebentshikova,
Yu. P. Yakovlev, E. Hulicius, A. Hospodkova, and Y. Pangrac p. 1041  abstract

Optical Reflection from the Bragg Lattice of AsSb Metal Nanoinclusions in an AlGaAs Matrix

V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin p. 1046  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

X-Ray and Synchrotron Studies of Porous Silicon

V. N. Sivkov, A. A. Lomov, A. L. Vasil’ev, S. V. Nekipelov, and O. V. Petrova p. 1051  abstract

Carbon Systems

Copolymers of Carbazole- and Indolocarbazole-Containing Phenylquinolines
as New Materials for Electroluminescent Devices

E. L. Aleksandrova, V. M. Svetlichnyi, T. N. Nekrasova, R. Yu. Smyslov, L. A. Myagkova,
N. V. Matyushina, A. R. Tameev, V. D. Pautov, and V. V. Kudryavtsev p. 1058  abstract

Physics of Semiconductor Devices

Transient Processes in High-Voltage Silicon Carbide Bipolar-Junction Transistors

V. S. Yuferev, M. E. Levinshtein, P. A. Ivanov, Q. J. Zhang, A. K. Agarwal, and J. W. Palmour p.1068  abstract

850-nm Diode Lasers with Different Ways of Compensating for Internal Mechanical Stresses
in an AlGaAs:P/GaAs Heterostructure

D. A. Vinokurov, A. V. Lyutetskiy, D. N. Nikolaev, V. V. Shamakhov, K. V. Bakhvalov,
V. V. Vasylyeva, L. S. Vavilova, M. G. Rastegaeva, and I. S. Tarasov p. 1075  abstract

AlGaAs/GaAs Diode Lasers (1020–1100 nm)
with an Asymmetric Broadened Single Transverse Mode Waveguide

S. O. Slipchenko, A. A. Podoskin, D. A. Vinokurov, A. D. Bondarev, V. A. Kapitonov,
N. A. Pikhtin, P. S. Kop’ev, and I. S. Tarasov p. 1079  abstract

Electrical Phenomena in a Metal/Nanooxide/p⁺-Silicon Structure
during Its Transformation to a Resonant-Tunneling Diode

G. G. Kareva and M. I. Vexler p. 1084  abstract

Study of the Properties of Solar Cells Based on a-Si:H p–i–n Structures
by Admittance Spectroscopy

A. S. Gudovskikh, A. S. Abramov, A. V. Bobyl, V. N. Verbitskiy, K. S. Zelentsov, E. M. Ershenko,
D. A. Kudryashov, S. A. Kudryashov, A. O. Monastyrenko, A. R. Terra, and E. I. Terukov p. 1090  abstract

Optimization of the Design and Mode of Operation
of a QD Laser for Reducing the Heat-to-Bitrate Ratio

A. E. Zhukov, A. V. Savelyev, M. V. Maximov, N. V. Kryzhanovskaya, N. Yu. Gordeev,
Yu. M. Shernyakov, A. S. Payusov, A. M. Nadtochiy, F. I. Zubov, and V. V. Korenev p. 1097  abstract

High-Speed Photodiodes for the Mid-Infrared Spectral Region 1.2–2.4 m Based
on GaSb/GaInAsSb/GaAlAsSb Heterostructures with a Transmission Band of 2–5 GHz

I. A. Andreev, O. Yu. Serebrennikova, G. S. Sokolovskii, V. V. Dudelev,
N. D. Ilynskaya, G. G. Konovalov, E. V. Kunitsyna, and Yu. P. Yakovlev p. 1103  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Features of Defect Formation During the Growth of Double Heterostructures
for Injection Lasers Based on Al_xGa_1–xAs_ySb_1–y/GaSb Materials

G. F. Kuznetsov p. 1110  abstract

Changes Induced in a ZnS:Cr-Based Electroluminescent Waveguide Structure
by Intrinsic Near-Infrared Laser Radiation

N. A. Vlasenko, P. F. Oleksenko, M. A. Mukhlyo, and L. I. Veligura p. 1116  abstract

Prospects for the Pulsed Electrodeposition of Zinc-Oxide Hierarchical Nanostructures

N. P. Klochko, Y. O. Myagchenko, E. E. Melnychuk, V. R. Kopach, E. S. Klepikova,
V. N. Lyubov, G. S. Khrypunov, and A. V. Kopach p. 1123  abstract

Effect of Annealing in Argon on the Properties of Thermally Deposited Gallium-Oxide Films

V. M. Kalygina, V. V. Vishnikina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova,
O. P. Tolbanov, A. V. Tyazhev, S. Y. Tcupiy, and T. M. Yaskevich p. 1130  abstract

Effect of Annealing on the Nonequilibrium Carrier Lifetime
in GaAs Grown at Low Temperatures

A. A. Pastor, U. V. Prokhorova, P. Yu. Serdobintsev, V. V. Chaldyshev, and M. A. Yagovkina p.1137  abstract

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