Contents
Semiconductors

Vol. 45, No. 8, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Superionic Conductivity in TlGaTe₂ Crystals

R. M. Sardarli, O. A. Samedov, A. P. Abdullayev, E. K. Huseynov,
E. M. Qocayev, and F. T. Salmanov p. 975  abstract

Dispersion of the Refractive Index of Epitaxial Pb_1–xEu_xTe (0 x 1)
Alloy Layers below the Absorption Edge

D. A. Pashkeev, Yu. G. Selivanov, E. G. Chizhevskii, D. B. Stavrovskii, and I. I. Zasavitskiy p. 980  abstract

Doping of the Bi_1.9Sb_0.1Te₃ Solid Solution with Sn Impurity

M. K. Zhitinskaya, S. A. Nemov, V. R. Muhtarov, and T. E. Svechnikova p. 988  abstract

Study of Optical Parameters of the Se–As Chalcogenide
Semiconductor System Containing EuF₃ Impurities

A. I. Isayev, S. I. Mekhtiyeva, S. N. Garibova, R. I. Alekperov, and V. Z. Zeynalov p. 993  abstract

Calculation of the Electron Structure of Vacancies
and their Compensated States in III–VI Semiconductors

M. A. Mehrabova and R. S. Madatov p. 998  abstract

Spectroscopy, Interaction with Radiation

Photoluminescence in Silicon Implanted with Erbium Ions at an Elevated Temperature

N. A. Sobolev, A. E. Kalyadin, E. I. Shek, V. I. Sakharov, I. T. Serenkov,
V. I. Vdovin, E. O. Parshin, and M. I. Makoviichuk p. 1006  abstract

Surfaces, Interfaces, and Thin Films

The Nature of Electrical Interaction of Schottky Contacts

N. A. Torkhov p. 1009  abstract

Study of the Influence of the Sulfide and Ultraviolet Treatment
of the n–i-GaAs Surface on the Parameters of Ohmic Contacts

S. M. Avdeev, E. V. Erofeev, and V. A. Kagadei p. 1026  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Studies of the Mobility of Charge Carriers in Low-Dimensional Systems
in a Transverse DC Electric Field

E. P. Sinyavskii and S. A. Karapetyan p. 1032  abstract

Eddy Currents Appearing in a p–n Junction in a High Microwave Field

S. H. Shamirzaev, G. Gulyamov, M. G. Dadamirzaev, and A. G. Gulyamov p. 1035  abstract

Dielectric and Transport Properties of Thin Films Precipitated
from Sols with Silicon Nanoparticles

N. N. Kononov, S. G. Dorofeev, A. A. Ishchenko, R. A. Mironov,
V. G. Plotnichenko, and E. M. Dianov p. 1038  abstract

Growth of Single GaAs Nanowhiskers on the Tip
of a Tungsten Needle and Their Electrical Properties

A. O. Golubok, Yu. B. Samsonenko, I. S. Mukhin, A. D. Buravlev, and G. E. Cirlin p. 1049  abstract

Photosensitive Thin-Film In/p-Pb_xSn_1–xS Schottky Barriers: Fabrication and Properties

V. F. Gremenok, V. Yu. Rud’, Yu. V. Rud’, S. A. Bashkirov, and V. A. Ivanov p.1053  abstract

Photosensitized Generation of Singlet Oxygen in Powders
and Aqueous Suspensions of Silicon Nanocrystals

Yu. V. Ryabchikov, I. A. Belogorokhov, M. B. Gongalskii,
L. A. Osminkina, and V. Yu. Timoshenko p. 1059  abstract

Room-Temperature Optical Absorption in the InAs/GaAs Quantum-Dot
Superlattice under an Electric Field

M. M. Sobolev, I. M. Gadzhiev, I. O. Bakshaev, V. N. Nevedomskii, M. S. Buyalo,
Yu. M. Zadiranov, and E. L. Portnoi p. 1064  abstract

Electronic States in Epitaxial Graphene Fabricated on Silicon Carbide

S. Yu. Davydov p. 1070  abstract

Mechanisms of Charge Transport in Anisotype n-TiO₂/p-CdTe Heterojunctions

V. V. Brus, M. I. Ilashchuk, Z. D. Kovalyuk, P. D. Maryanchuk,
K. S. Ulyanytsky, and B. N. Gritsyuk p. 1077  abstract

Piezoelectric Effect in GaAs Nanowires

I. P. Soshnikov, Dm. E. Afanas’ev, V. A. Petrov, G. E. Cirlin, A. D. Bouravlev,
Yu. B. Samsonenko, A. Khrebtov, E. M. Tanklevskaya, and I. A. Seleznev p. 1082  abstract

Amorphous, Vitreous, and Organic Semiconductors

Electrical Properties of Thin-Film Composites Based on Silicon and Polypropylene

Sh. M. Gasanli, A. Y. Imanova, and U. F. Samedova p. 1085  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Anodization of Nanoscale Si Layers in Silicon-on-Insulator Structures

V. A. Antonov, E. V. Spesivtsev, and I. E. Tyschenko p. 1089  abstract

Treatment of the Surface of Blanks for Fabrication of CdZnTe-Based Detectors

O. A. Fedorenko, N. G. Dubina, V. A. Khristyan, and I. S. Terzin p. 1094  abstract

Ga₂O₃ Films Formed by Electrochemical Oxidation

V. M. Kalygina, A. N. Zarubin, Ye. P. Nayden, V. A. Novikov, Y. S. Petrova,
O. P. Tolbanov, A. V. Tyazhev, and T. M. Yaskevich p. 1097  abstract

Fabrication Technology of Heterojunctions in the Lattice
of a 2D Photonic Crystal Based on Macroporous Silicon

Yu. A. Zharova, G. V. Fedulova, E. V. Astrova, A. V. Baldycheva,
V. A. Tolmachev, and T. S. Perova p.1103  abstract

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