Contents
Semiconductors
Vol. 44, No. 8, 2010
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Propertties of Semiconductors
A Study of the Process of Decomposition of Supersaturated GaAs:Fe Solid Solution
by Scanning Probe Microscopy
S. S. Khludkov, I. A. Prudaev, V. V. Novikov, O. P. Tolbanov, and I. V. Ivonin p. 975 abstract
Two-Electron Tin Centers Arising in Glassy Chalcogenides
of Arsenic due to Nuclear Reactions
G. A. Bordovsky, P. V. Gladkikh, M. Yu. Kozhokar, A. V. Marchenko,
P. P. Seregin, and E. I. Terukov p. 978 abstract
Interaction of Copper Impurity with Radiation Defects in Silicon Doped with Boron
N. A. Yarykin and J. Weber p. 983 abstract
Electrical and Optical Properties of Semiconductors
Electron Structure and Spectral Characteristics of Cd-Substituted Ge-Based Clathrates
N. A. Borshch, N. S. Pereslavtseva, and S. I. Kurganskii p. 987 abstract
Study of Main HgMnZnTe Band Parameters
S. E. Ostapov, V. M. Frasunyak, and V. V. Zhikharevich p. 993 abstract
Statistical Method of Deep-Level Transient Spectroscopy in Semiconductors
E. A. Tatokhin, A. V. Kadantsev, A. E. Bormontov, and V. G. Zadorozhniy p. 997 abstract
Features of the Charge Transfer in Structures Based on Thin Layers
of Bismuth-Modified Arsenic Triselenide
N. I. Anisimova, V. A. Bordovsky, G. I. Grabko, and R. A. Castro p. 1004 abstract
Electron Scattering by Acceptor Centers in p-Ag2Te at Low Temperatures
F. F. Aliev, M. B. Jafarov, G. Z. Askerova, and E. M. Gojaev p. 1008 abstract
Semiconductor Structures, Interfaces, and Surfaces
Optical Properties of Thin GaSe/n-Si(111) films
M. P. Kisselyuk, O. I. Vlasenko, P. O. Gentsar, M. V. Vuychik, M. S. Zayats,
I. V. Kruglenko, O. S. Litvin, and Ts. A. Kryskov p. 1012 abstract
Direct Tunneling of Electrons in Aln+-SiSiO2n-Si Structures under Conditions
of Nonstationary Depletion of the Semiconductor Surface of the Majority Charge Carriers
E. I. Goldman, Yu. V. Gulyaev, A. G. Zhdan, and G. V. Chucheva p. 1016 abstract
CapacitanceVoltage Characteristics of the Electrolyten-InN Surface
and Electron States at the Interface
M. E. Rudinsky, A. A. Gutkin, and P. N. Brunkov p. 1020 abstract
Development and Photoelectric Properties of In/p-Ag3AsS3 Surface-Barrier Structures
V. Yu. Rud, Yu. V. Rud, and E. I. Terukov p. 1025 abstract
MetalInsulatorSemiconductor Barriers
with a Nanometer-Thick Aluminum Nitride Insulator on p-type Silicon
A. M. Ivanov, I. M. Kotina, M. S. Lasakov, N. B. Strokan, and L. M. Tuhkonen p.1030 abstract
Low-Dimensional Systems
Effect of Spacer Layers on CurrentVoltage Characteristics of Resonant-Tunneling Diode
M. A. Remnev, I. Yu. Kateev, and V. F. Elesin p. 1034 abstract
Raman Studies of Silicon Nanocrystals Embedded in Silicon Suboxide Layers
N. E. Maslova, A. A. Antonovsky, D. M. Zhigunov, V. Yu. Timoshenko,
V. N. Glebov, and V. N. Seminogov p. 1040 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Raman Scattering in Organic Semiconductors Based
on Erbium Biphthalocyanine Molecules and Chlorine-Containing EuropiumLutetium
Triphthalocyanine Molecules
I. A. Belogorokhov, D. A. Mamichev, M. A. Dronov, V. E. Pushkarev,
L. G. Tomilova, and D. R. Khokhlov p. 1044 abstract
InGaAs TunnelInjection Structures with Nanobridges:
Excitation Transfer and Luminescence Kinetics
V. G. Talalaev, A. V. Senichev, B. V. Novikov, J. W. Tomm, T. Elsaesser,
N. D. Zakharov, P. Werner, U. Gsele, Yu. B. Samsonenko, and G. E. Cirlin p. 1050 abstract
Study of Spin Centers in Nanocrystalline Titanium Dioxide
with a High Degree of Photocatalytic Activity
E. A. Konstantinova, V. Ya. Gayvoronskiy, V. Yu. Timoshenko, and P. K. Kashkarov p. 1059 abstract
Study of Photoluminescence and Electroluminescence Mechanisms
in Quantum-Confined InSb/InAs Heterostructures
Ya. V. Terentev, M. S. Mukhin, V. A. Solovev, A. N. Semenov, B. Ya. Meltser,
A. A. Usikova, and S. V. Ivanov p. 1064 abstract
Photoluminescence of Nitro-Substituted Europium (III) Phthalocyanines
A. V. Ziminov, Yu. A. Polevaya, T. A. Jourre, S. M. Ramsh,
M. M. Mezdrogina, and N. K. Poletaev p. 1070 abstract
A Study of Raman and Rutherford Backscattering Spectra
of Amorphous Carbon Films Modified with Platinum
A. D. Remenyuk, T. K. Zvonareva, I. T. Serenkov, V. I. Sakharov,
T. S. Perova, and J. Wasyluk p. 1074 abstract
Physics of Semiconductor Devices
Efficient Photoelectric Converters of Ultraviolet Radiation Based
on ZnS and CdS with Low-Resistivity Surface Layers
Yu. N. Bobrenko, S. Yu. Pavelets, A. M. Pavelets, M. P. Kiselyuk, and N. V. Yaroshenko p. 1080 abstract
Study of Minority Carrier Diffusion Lengths in Photoactive Layers of Multijunction Solar Cells
S. A. Mintairov, V. M. Andreev, V. M. Emelyanov, N. A. Kalyuzhnyy,
N. K. Timoshina, M. Z. Shvarts, and V. M. Lantratov p. 1084 abstract
Interference Effects in the Electroreflectance and Electroluminescence Spectra
of InGaN/AlGaN/GaN Light-Emitting-Diode Heterostructures
L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, A. V. Chuyas, A. E. Yunovich,
E. D. Vasileva, D. A. Bauman, V. V. Uelin, and B. S. Yavich p. 1090 abstract
InP/GaAsSb Type-II DHBTs with GaAsSb/lnGaAs Superlattice-Base
and GaAsSb Bulk-Base Structures
Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu,
Yi-Zhen Wu, and Ying-Feng Dai p.1096 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Structural and Electrical Properties of SiGe-on-Insulator Substrates Fabricated by Direct Bonding
I. V. Grekhov, L. S. Kostina, T. S. Argunova, E. I. Belyakova, A. V. Rozkov,
N. M. Shmidt, Sh. A. Yusupova, and J. H. Je p. 1101 abstract
Relaxation of Crystal Lattice Parameters and Structural Ordering
in InxGa1xAs Epitaxial Alloys
P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev,
D. A. Vinokurov, A. L. Stankevich, and I. S. Tarasov p. 1106 abstract
Properties of ZnO Whiskers under CO2-Laser Irradiation
P. S. Shkumbatyuk p.1113 abstract
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