Contents
Semiconductors

Vol. 44, No. 8, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Propertties of Semiconductors

A Study of the Process of Decomposition of Supersaturated GaAs:Fe Solid Solution
by Scanning Probe Microscopy

S. S. Khludkov, I. A. Prudaev, V. V. Novikov, O. P. Tolbanov, and I. V. Ivonin p. 975  abstract

Two-Electron Tin Centers Arising in Glassy Chalcogenides
of Arsenic due to Nuclear Reactions

G. A. Bordovsky, P. V. Gladkikh, M. Yu. Kozhokar, A. V. Marchenko,
P. P. Seregin, and E. I. Terukov p. 978  abstract

Interaction of Copper Impurity with Radiation Defects in Silicon Doped with Boron

N. A. Yarykin and J. Weber p. 983  abstract

Electrical and Optical Properties of Semiconductors

Electron Structure and Spectral Characteristics of Cd-Substituted Ge-Based Clathrates

N. A. Borshch, N. S. Pereslavtseva, and S. I. Kurganskii p. 987  abstract

Study of Main HgMnZnTe Band Parameters

S. E. Ostapov, V. M. Frasunyak, and V. V. Zhikharevich p. 993  abstract

Statistical Method of Deep-Level Transient Spectroscopy in Semiconductors

E. A. Tatokhin, A. V. Kadantsev, A. E. Bormontov, and V. G. Zadorozhniy p. 997  abstract

Features of the Charge Transfer in Structures Based on Thin Layers
of Bismuth-Modified Arsenic Triselenide

N. I. Anisimova, V. A. Bordovsky, G. I. Grabko, and R. A. Castro p. 1004  abstract

Electron Scattering by Acceptor Centers in p-Ag₂Te at Low Temperatures

F. F. Aliev, M. B. Jafarov, G. Z. Askerova, and E. M. Gojaev p. 1008  abstract

Semiconductor Structures, Interfaces, and Surfaces

Optical Properties of Thin GaSe/n-Si(111) films

M. P. Kisselyuk, O. I. Vlasenko, P. O. Gentsar, M. V. Vuychik, M. S. Zayats,
I. V. Kruglenko, O. S. Litvin, and Ts. A. Kryskov p. 1012  abstract

Direct Tunneling of Electrons in Al–n⁺-Si–SiO₂–n-Si Structures under Conditions
of Nonstationary Depletion of the Semiconductor Surface of the Majority Charge Carriers

E. I. Goldman, Yu. V. Gulyaev, A. G. Zhdan^†, and G. V. Chucheva p. 1016  abstract

Capacitance–Voltage Characteristics of the Electrolyte–n-InN Surface
and Electron States at the Interface

M. E. Rudinsky, A. A. Gutkin, and P. N. Brunkov p. 1020  abstract

Development and Photoelectric Properties of In/p-Ag₃AsS₃ Surface-Barrier Structures

V. Yu. Rud’, Yu. V. Rud’, and E. I. Terukov p. 1025  abstract

Metal–Insulator–Semiconductor Barriers
with a Nanometer-Thick Aluminum Nitride Insulator on p-type Silicon

A. M. Ivanov, I. M. Kotina, M. S. Lasakov, N. B. Strokan, and L. M. Tuhkonen p.1030  abstract

Low-Dimensional Systems

Effect of Spacer Layers on Current–Voltage Characteristics of Resonant-Tunneling Diode

M. A. Remnev, I. Yu. Kateev, and V. F. Elesin p. 1034  abstract

Raman Studies of Silicon Nanocrystals Embedded in Silicon Suboxide Layers

N. E. Maslova, A. A. Antonovsky, D. M. Zhigunov, V. Yu. Timoshenko,
V. N. Glebov, and V. N. Seminogov p. 1040  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Raman Scattering in Organic Semiconductors Based
on Erbium Biphthalocyanine Molecules and Chlorine-Containing Europium–Lutetium
Triphthalocyanine Molecules

I. A. Belogorokhov, D. A. Mamichev, M. A. Dronov, V. E. Pushkarev,
L. G. Tomilova, and D. R. Khokhlov p. 1044  abstract

InGaAs Tunnel–Injection Structures with Nanobridges:
Excitation Transfer and Luminescence Kinetics

V. G. Talalaev, A. V. Senichev, B. V. Novikov, J. W. Tomm, T. Elsaesser,
N. D. Zakharov, P. Werner, U. Gsele^†, Yu. B. Samsonenko, and G. E. Cirlin p. 1050  abstract

Study of Spin Centers in Nanocrystalline Titanium Dioxide
with a High Degree of Photocatalytic Activity

E. A. Konstantinova, V. Ya. Gayvoronskiy, V. Yu. Timoshenko, and P. K. Kashkarov p. 1059  abstract

Study of Photoluminescence and Electroluminescence Mechanisms
in Quantum-Confined InSb/InAs Heterostructures

Ya. V. Terent’ev, M. S. Mukhin, V. A. Solov’ev, A. N. Semenov, B. Ya. Meltser,
A. A. Usikova, and S. V. Ivanov p. 1064  abstract

Photoluminescence of Nitro-Substituted Europium (III) Phthalocyanines

A. V. Ziminov, Yu. A. Polevaya, T. A. Jourre, S. M. Ramsh,
M. M. Mezdrogina, and N. K. Poletaev p. 1070  abstract

A Study of Raman and Rutherford Backscattering Spectra
of Amorphous Carbon Films Modified with Platinum

A. D. Remenyuk, T. K. Zvonareva, I. T. Serenkov, V. I. Sakharov,
T. S. Perova, and J. Wasyluk p. 1074  abstract

Physics of Semiconductor Devices

Efficient Photoelectric Converters of Ultraviolet Radiation Based
on ZnS and CdS with Low-Resistivity Surface Layers

Yu. N. Bobrenko, S. Yu. Pavelets, A. M. Pavelets, M. P. Kiselyuk, and N. V. Yaroshenko p. 1080  abstract

Study of Minority Carrier Diffusion Lengths in Photoactive Layers of Multijunction Solar Cells

S. A. Mintairov, V. M. Andreev, V. M. Emelyanov, N. A. Kalyuzhnyy,
N. K. Timoshina, M. Z. Shvarts, and V. M. Lantratov p. 1084  abstract

Interference Effects in the Electroreflectance and Electroluminescence Spectra
of InGaN/AlGaN/GaN Light-Emitting-Diode Heterostructures

L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, A. V. Chuyas, A. E. Yunovich,
E. D. Vasileva, D. A. Bauman, V. V. Uelin, and B. S. Yavich p. 1090  abstract

InP/GaAsSb Type-II DHBTs with GaAsSb/lnGaAs Superlattice-Base
and GaAsSb Bulk-Base Structures

Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu,
Yi-Zhen Wu, and Ying-Feng Dai p.1096  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Structural and Electrical Properties of SiGe-on-Insulator Substrates Fabricated by Direct Bonding

I. V. Grekhov, L. S. Kostina, T. S. Argunova, E. I. Belyakova, A. V. Rozkov,
N. M. Shmidt, Sh. A. Yusupova, and J. H. Je p. 1101  abstract

Relaxation of Crystal Lattice Parameters and Structural Ordering
in In_xGa_1–xAs Epitaxial Alloys

P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev,
D. A. Vinokurov, A. L. Stankevich, and I. S. Tarasov p. 1106  abstract

Properties of ZnO Whiskers under CO₂-Laser Irradiation

P. S. Shkumbatyuk p.1113  abstract

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