Contents
Semiconductors

Vol. 42, No. 7, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic and Optical Properties of Semiconductors

Mechanism of Local Amorphization of a Heavily Doped Ti_1–xV_xCoSb Intermetallic Semiconductor

V. A. Romaka, Yu. V. Stadnyk, L. G. Akselrud, V. V. Romaka, D. Fruchart, P. Rogl,
V. N. Davydov, and Yu. K. Gorelenko p. 753  abstract

Fundamental Spectra of Optical Functions of Ferroelectric Sodium Nitrite

V. V. Sobolev, A. I. Kalugin, V. Val. Sobolev, and S. G. Iskhakova p. 761  abstract

Semiconductor Structures, Interfaces, and Surfaces

Photoluminescence Spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) Heterostructures

M. M. Mezdrogina, V. V. Krivolapchuk, N. A. Feoktistov, É. Yu. Danilovski,
R. V. Kuzmin, S. V. Razumov, S. A. Kukushkin, and A. V. Osipov p. 766  abstract

CdTe as a Passivating Layer in CdTe/HgCdTe Heterostructures

I. S. Virt, I. V. Kurilo, I. A. Rudy, F. F. Sizov, N. N. Mikhalov, and R. N. Smirnov p. 772  abstract

Properties of Barrier Contacts with Nanosize TiB_x Layers to InP

I. N. Arsentyev, A. V. Bobyl, I. S. Tarasov, N. S. Boltovets, V. N. Ivanov,
A. E. Belyaev, A. B. Kamalov, R. V. Konakova, Ya. Ya. Kudryk, O. S. Lytvyn,
V. V. Milenin, and E. V. Russu p. 777  abstract

Admittance and Nonlinear Capacitance of a Multilayer Metal–Semiconductor Structure

N. V. Vostokov and V. I. Shashkin p. 783  abstract

Low-Dimensional Systems

InGaN Nanoinclusions in an AlGaN Matrix

V. S. Sizov, A. F. Tsatsul’nikov, and V. V. Lundin p. 788  abstract

Periodic Formation of Transient Population Inversion
for Intersubband Laser Transitions in Quantum Wells

V. A. Kukushkin p. 794  abstract

Effect of Oxygen on Structure and Electronic Properties
of Silicon Nanoclusters Si_n (n = 5, 6, 10, 18)

A. A. Gnidenko and V. G. Zavodinsky p. 800  abstract

Methods of Controlling the Emission Wavelength
in InAs/GaAsN/InGaAsN Heterostructures on GaAs Substrates

V. V. Mamutin, A. Yu. Egorov, N. V. Kryzhanovskaya, V. S. Mikhrin,
A. M. Nadtochy, and E. V. Pirogov p. 805  abstract

Relaxation of Excitons in Semimagnetic Asymmetric Double Quantum Wells

S. V. Zaitsev, A. S. Brichkin, P. S. Dorozhkin, and G. Bacher p. 813  abstract

Exchange Enhancement of the g Factor in InAs/AlSb Heterostructures

V. Ya. Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, S. S. Krishtopenko,
Yu. G. Sadofyev, and K. E. Spirin p. 828  abstract

Physics of Semiconductor Devices

Measurement and Comparison of Silicon p–i–n-Photodiodes
with ac Impedance at Different Voltages

S. Özden, H. Bayhan, A. Dönmez, and M. Bayhan p. 834  abstract

Electric-Field Control of the Occupancy of the Upper Laser Subband
in Quantum-Well Structures with Asymmetric Barriers Designed for Unipolar Laser Operation

Yu. A. Aleshchenko, A. E. Zhukov, V. V. Kapaev, Yu. V. Kopaev,
P. S. Kop’ev, and V. M. Ustinov p. 838  abstract

Optical Confinement in Laser Diodes Based on Nitrides of Group III Elements.
Part 1: Theory and Optical Properties of Materials

T. E. Slobodyan, K. A. Bulashevich, and S. Yu. Karpov p. 845  abstract

Optical Confinement in Laser Diodes Based on Nitrides of Group III Elements.
Part 2: Analysis of Heterostructures on Various Substrates

T. E. Slobodyan, K. A. Bulashevich, and S. Yu. Karpov p. 852  abstract

Pulsed Breakdown of 4H-SiC Schottky Diodes Terminated
with a Boron-Implanted p–n Junction

P. A. Ivanov, I. V. Grekhov, A. S. Potapov, and T. P. Samsonova p. 858  abstract

High-Power Laser Diodes with an Emission Wavelength of 835 nm
on the Basis of Various Types of Heterostructures

A. V. Murashova, D. A. Vinokurov, N. A. Pikhtin, S. O. Slipchenko, V. V. Shamakhov,
V. V. Vasilyeva, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiy, T. A. Nalet, D. N. Nikolaev,
A. L. Stankevich, N. V. Fetisova, I. S. Tarasov, Y. S. Kim, D. H. Kang, and C. Y. Lee p. 862  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Changes in Characteristics of Gadolinium, Titanium, and Erbium Oxide Films
on the SiC Surface under Microwave Treatment

Yu. Yu. Bacherikov, R. V. Konakova, V. V. Milenin, O. B. Okhrimenko,
A. M. Svetlichnyi, and V. V. Polyakov p. 868  abstract

Formation Kinetics of Various Types of Hydrogen-related Donors in Proton-Implanted Silicon

Yu. M. Pokotilo, A. N. Petukh, and O. A. Dzichkovski p. 873  abstract

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