Contents
Semiconductors

Vol. 41, No. 7, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Review

The Effect of Irradiation on the Properties of SiC and Devices Based on this Compound

E. V. Kalinina p. 745  abstract

Electronic and Optical Properties of Semiconductors

The Origin of Edge Luminescence in Diffusion ZnSe:Sn Layers

V. I. Gryvul, V. P. Makhniy, and M. M. Slyotov p. 784  abstract

Optical Properties of Doped Bismuth Telluride Crystals in the Region of Plasma Effects

N. P. Stepanov, S. A. Nemov, M. K. Zhitinskaya, and T. E. Svechnikova p. 786  abstract

Electron Spin Resonance of Interacting Spins in n-Ge. 1. The Spectrum and g Factor

A. I. Venger, A. G. Zabrodski, T. V. Tisnek, and S. I. Goloshchapov p. 790  abstract

Features of Erbium Electroluminescence Observed in Disordered Semiconductors
and Related to the Difference in the Localized State Charge

A. B. Shmel’kin and K. D. Tsendin p. 799  abstract

Conduction Type Conversion in Ion Etching
of Au- and Ag-Doped Narrow-Gap HgCdTe Single Crystal

V. V. Bogoboyashchyy^†, I. I. Izhnin, M. Pociask,
K. D. Mynbaev, and V. I. Ivanov-Omski p. 804  abstract

Semiconductor Structures, Interfaces, and Surfaces

Atomic and Electron Structure of the GaAs (001) Surface

S. E. Kul’kova, S. V. Eremeev, A. V. Postnikov, D. I. Bazhanov, and B. V. Potapkin p. 810  abstract

Low-Dimensional Systems

Lateral Conductivity of p-Type Doped Si/Ge Island Structures

V. A. Gergel’, T. M. Burbaev, V. A. Kurbatov, A. O. Pogosov, M. Rzaev,
N. N. Sibel’din, I. M. Shcheleva, and M. N. Yakupov p. 818  abstract

The Role of Surface Phonons in the Formation of the Spectrum
of Polaron States in Quantum Dots

A. Yu. Maslov, O. V. Proshina, and A. N. Rusina p. 822  abstract

Molecular State of A⁺ Centers in GaAs/AlGaAs Quantum Well

P. V. Petrov, Yu. L. Ivanov, and A. E. Zhukov p. 828  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Electrochemical Pore Formation Mechanism in III–V Crystals (Part I)

V. P. Ulin and S. G. Konnikov p. 832  abstract

Electrochemical Pore Formation Mechanism in III–V Crystals (Part II)

V. P. Ulin and S. G. Konnikov p. 845  abstract

Physics of Semiconductor Devices

High-Efficiency LEDs Based on n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb
Type-II Thyristor Heterostructures

N. D. Stoyanov, B. E. Zhurtanov, A. N. Imenkov, A. P. Astakhova,
M. P. Mikhalova, and Yu. P. Yakovlev p. 855  abstract

1.8-m Laser Diodes Based on Quantum-Size AlInGaAs/InP Heterostructures

A. V. Lyutetski, K. S. Borshchev, A. D. Bondarev, T. A. Nalet, N. A. Pikhtin,
S. O. Slipchenko, N. V. Fetisova, M. A. Khomylev, A. A. Marmalyuk,
Yu. L. Ryaboshtan, V. A. Simakov, I. S. Tarasov p. 860  abstract

Effect of Deposition Conditions on Nanowhisker Morphology

V. G. Dubrovski, I. P. Soshnikov, N. V. Sibirev, G. É. Cirlin, V. M. Ustinov,
M. Tchernycheva, and J. C. Harmand p. 865  abstract

Errata

Erratum: “Silicon Photodiode with a Grid p–n Junction” [Semiconductors 41, 223–226 (2007)]

V. I. Blynskii, Y. G. Vasileuskii, S. A. Malyshev, and A. L. Chizh p. 875

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.