Contents
Semiconductors

Vol. 39, No. 7, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon

A. V. Olenich-Lysyuk, B. I. Gutsulyak, and I. M. Fodchuk p. 735  abstract

Phonon Scattering, Thermoelectric Power, and Thermal Conductivity Control
in a Semiconductor–Metal Eutectic Composition

G. I. Isakov p. 738  abstract

The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted
with Erbium and Oxygen Ions

O. V. Aleksandrov, A. O. Zakhar’in, and N. A. Sobolev p. 742  abstract

Stresses in Selectively Oxidized GaAs/(AlGa)_xO_y Structures

S. A. Blokhin, A. N. Smirnov, A. V. Sakharov, A. G. Gladyshev, N. V. Kryzhanovskaya,
N. A. Maleev, A. E. Zhukov, E. S. Semenova, D. A. Bedarev, E. V. Nikitina, M. M. Kulagina,
M. V. Maksimov, N. N. Ledentsov, and V. M. Ustinov p. 748  abstract

Electronic and Optical Properties of Semiconductors

Low-Temperature Instabilities of the Electrical Properties of Cd_0.96Zn_0.04Te:Cl Semi-insulating Crystals

A. V. Savitski, O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ulyanitski,
S. N. Chupyra, and N. D. Vakhnyak p. 754  abstract

Polarized Infrared and Raman Spectroscopy Studies of the Liquid Crystal E7 Alignment
in Composites Based on Grooved Silicon

E. V. Astrova, T. S. Perova, S. A. Grudinkin, V. A. Tolmachev, Yu. A. Pilyugina,
V. B. Voronkov, and J. K. Vij p. 759  abstract

Hydrogen-Containing Donors in Silicon: Centers with Negative Effective Correlation Energy

Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, and V. G. Tsvyrko p. 768  abstract

Weak Ferromagnetism in InSe:Mn Layered Crystals

V. V. Slyn’ko, A. G. Khandozhko, Z. D. Kovalyuk, A. V. Zaslonkin,
V. E. Slyn’ko, M. Arciszewska, and W. D. Dobrowolski p. 772  abstract

Dispersion of the Refractive Index in Tl_1–xCu_xGaSe₂ (0 x 0.02)
and Tl_1–xCu_xInS₂ (0 x 0.015) Crystals

A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev p. 777  abstract

The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals

I. A. Bolshakova, V. M. Boko, V. N. Brudny, I. V. Kamenskaya, N. G. Kolin,
E. Yu. Makido, T. A. Moskovets, and D. I. Merkurisov p. 780  abstract

The Electrooptic Effect and Anisotropy of the Refractive Index in Tl_1–xCu_xGaSe₂ (0 x 0.02) Crystals

A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev p. 786  abstract

Stimulation of Negative Magnetoresistance by an Electric Field and Light
in Silicon Doped with Boron and Manganese

M. K. Bakhadyrkhanov, O. É. Sattarov, Kh. M. Iliev, K. S. Ayupov, and Tuérdi Umaer p. 789  abstract

Semiconductor Structures, Interfaces, and Surfaces

Specific Features of the Physical Properties of a Modified CdTe Surface

V. P. Makhniy p. 792  abstract

The Effects of Interface States on the Capacitance and Electroluminescence Efficiency
of InGaN/GaN Light-Emitting Diodes

N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov,
A. V. Klochkov, D. A. Lavrinovich, and Yu. G. Shreter p. 795  abstract

The Properties of Structures Based on Oxidized Porous Silicon
under the Effect of Illumination and a Gas Environment

D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova, D. V. Terin, and E. I. Khasina p. 800  abstract

Low-Dimensional Systems

Optical Transitions in a Quantized Cylindrical Layer in the Presence of a Homogeneous Electric Field

V. A. Arutyunyan, S. L. Arutyunyan, G. O. Demirchyan, and G. Sh. Petrosyan p. 805  abstract

Nonohmic Quasi-2D Hopping Conductance and the Kinetics of Its Relaxation

B. A. Aronzon, D. Yu. Kovalev, and V. V. Ryl’kov p. 811  abstract

The Transition from Thermodynamically to Kinetically Controlled Formation
of Quantum Dots in an InAs/GaAs(100) System

Yu. G. Musikhin, G. E. Cirlin, V. G. Dubrovski, Yu. B. Samsonenko,
A. A. Tonkikh, N. A. Bert, and V. M. Ustinov p. 820  abstract

Resonance Modulation of Electron–Electron Relaxation by a Quantizing Magnetic Field

V. I. Kadushkin p. 826  abstract

Amorphous, Vitreous, and Porous Semiconductors

A Study of the Local Electronic and Atomic Structure in a-Si_xC_1–x Amorphous Alloys
Using Ultrasoft X-ray Emission Spectroscopy

V. A. Terekhov, E. I. Terukov, I. N. Trapeznikova, V. M. Kashkarov, O. V. Kurilo,
S. Yu. Turishchev, A. B. Golodenko, and É. P. Domashevskaya p. 830  abstract

Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder

N. N. Kononov, G. P. Kuz’min, A. N. Orlov, A. A. Surkov, and O. V. Tikhonevich p. 835  abstract

Magnetic Properties of Iron-Modified Amorphous Carbon

S. G. Yastrebov, V. I. Ivanov-Omski, V. Pop, C. Morosanu, A. Slav, and J. Voiron p. 840  abstract

Photosensitive Properties and a Mechanism for Photogeneration of Charge Carriers
in Polymeric Layers Containing Organometallic Complexes

E. L. Aleksandrova, M. Ya. Gokhman, I. V. Podeshvo, and V. V. Kudryavtsev p. 845  abstract

Physics of Semiconductor Devices

High-Power Flip–Chip Blue Light-Emitting Diodes Based on AlGaInN

D. A. Zakhem, I. P. Smirnova, I. V. Roznanski, S. A. Gurevich, M. M. Kulagina,
E. M. Arakcheeva, G. A. Onushkin, A. L. Zakhem, E. D. Vasil’eva, and G. V. Itkinson p. 851  abstract

A Ferroelectric Field Effect Transistor Based on a Pb(Zr_xTi_1–x)O₃/SnO₂ Heterostructure

I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova, I. A. Linichuk, and I. V. Grekhov p. 856  abstract

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