Contents
Semiconductors


Vol. 37, No. 7, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.


Conference. Review

III International Conference on Amorphous and Microcrystalline Semiconductors (July 2–4, 2002)

E. I. Terukov p. 741  abstract


Conference. Electronic and Optical Properties of Semiconductors

Electron Diffraction Investigation of Structural Diversity of Amorphous Films of Polymorphic TlInS2

D. I. Ismailov, M. V. Alieva, E. Sh. Alekperov, and F. I. Aliev p. 744  abstract

The Influence of a High and Low Content of Au Impurity on the Photoluminescence of Stoichiometric
and Nonstoichiometric Arsenic Sulfide

A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov,
E. I. Terukov, and I. N. Trapeznikova
p. 748  abstract

Spectra of Fundamental Optical Functions of BeSe

V. Val. Sobolev and V. V. Sobolev p. 751  abstract

Optical Properties of Imperfect In2Se3

V. Val. Sobolev and V. V. Sobolev p. 757  abstract


Conference. Semiconductor Structures, Interfaces, and Surfaces

Spectral Photosensitivity of a-SiGe:H/c-Si Heterostructures

A. A. Sherchenkov p. 763  abstract


Conference. Amorphous, Vitreous, and Porous Semiconductors

Photoinduced Conductivity Change in Erbium-Doped Amorphous Hydrogenated Silicon Films

A. G. Kazanskiframe0, H. Mell, E. I. Terukov, and P. A. Forsh p. 766  abstract

On Studying Nanoporous-Carbon-Based Composites by Small-Angle X-Ray Scattering

É. A. Smorgonskaya p. 769  abstract

Fullerene Single Crystals as Adsorbents of Organic Compounds

V. I. Berezkin, I. V. Viktorovskiframe1, A. Ya. Vul’, L. V. Golubev, V. N. Petrova, and L. O. Khoroshko p. 775  abstract

X-Raying Studies of the Nanoporous Carbon Structure Produced from Carbide Materials

R. N. Kyutt, A. M. Danishevskiframe2, É. A. Smorgonskaya, and S. K. Gordeev p. 784  abstract

The Influence of Deposition Conditions and Alloying on the Electronic Properties
of Amorphous Selenium

S. O. Kasap, K. V. Koughia, B. Fogal, G. Belev, and R. E. Johanson p. 789  abstract

Synthesis and Physical Properties of Si(Ge)–Se–Te Glasses

L. A. Kulakova, B. T. Melekh, V. I. Bakharev, and V. Kh. Kudoyarova p. 795  abstract

Effect of Rare-Earth Impurities on the Photoluminescence of Ge2S3 Glass

A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov,
E. I. Terukov, and I. N. Trapeznikova
p. 800  abstract

Influence of the Order–Disorder Transition in the Crystal Electron Subsystem
on the Electron Density at Lattice Sites

N. P. Seregin, T. R. Stepanova, Yu. V. Kozhanova, V. P. Volkov,
P. P. Seregin, and N. N. Troitskaya
p. 803  abstract

Organic Materials for Photovoltaic and Light-Emitting Devices

T. A. Yourre, L. I. Rudaya, N. V. Klimova, and V. V. Shamanin p. 807  abstract

Optical and Electrical Properties of Polyamide Acid and Metal–Polymer Complex Based on Terbium

É. A. Lebedev, M. Ya. Goikhman, M. E. Kompan, V. Kh. Kudoyarova, I. V. Podeshvo,
E. I. Terukov, and V. V. Kudryavtsev
p. 816  abstract

Photosensitivity of New Photoconductive Polymers Based on Ruthenium–Biquinolyl Complexes

E. L. Aleksandrova, M. Ya. Goframe3khman, I. V. Podeshvo, I. V. Gofman, and V. V. Kudryavtsev p. 818  abstract

Optical and Photosensitive Properties of Comb-Shaped Polyamide-Imides

E. L. Aleksandrova, M. Ya. Goframe4khman, L. I. Subbotina, K. A. Romashkova, I. F. Gofman,
V. V. Kudryavtsev, and A. V. Yakimanskiframe5
p. 821  abstract

A Study of the Effect of Oxygen on the Intensity of Erbium Photoluminescence
in Amorphous SiOx:(H, Er) Films Formed by DC Magnetron Sputtering

Yu. K. Undalov, E. I. Terukov, O. B. Gusev, and V. Kh. Kudoyarova p. 825  abstract


Conference. Physics of Semiconductor Devices

Splitting of Resonant Optical Modes in Fabry–Perot Microcavities

V. G. Golubev, A. A. Dukin, A. V. Medvedev, A. B. Pevtsov, A. V. Sel’kin, and N. A. Feoktistov p. 832  abstract


Atomic Structure and Nonelectronic Properties of Semiconductors

The Use of Magnesium to Dope Gallium Nitride Obtained by Molecular-Beam Epitaxy
from Activated Nitrogen

A. A. Vorob’ev, V. V. Korablev, and S. Yu. Karpov p. 838  abstract

Simulation of Growth Kinetics of Octahedral and Platelike Oxygen Precipitates in Silicon

V. V. Svetukhin, A. G. Grishin, and O. V. Prikhod’ko p. 843  abstract


Electronic and Optical Properties of Semiconductors

Special Features of Electron Spin Resonance in 4H-SiC in the Vicinity
of the Insulator–Metal Phase Transition: I. Effects of Spin Interaction

A. I. Veframe6nger, A. G. Zabrodskiframe7, T. V. Tisnek, and E. N. Mokhov p. 846  abstract

Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties
of QD Arrays in InAs/GaAs System

V. G. Dubrovskiframe8, V. A. Egorov, G. E. Cirlin, N. K. Polyakov, Yu. B. Samsonenko,
N. V. Kryzhanovskaya, A. F. Tsatsul’nikov, and V. M. Ustinov
p. 855  abstract


Low-Dimensional Systems

Control over the Parameters of InAs–GaAs Quantum Dot Arrays
in the Stranski–Krastanow Growth Mode

N. A. Cherkashin, M. V. Maksimov, A. G. Makarov, V. A. Shchukin, V. M. Ustinov, N. V. Lukovskaya,
Yu. G. Musikhin, G. E. Cirlin, N. A. Bert, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg
p. 861  abstract


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