, H. Mell, E. I. Terukov, and P. A. Forsh p. 766 abstract
Contents
Semiconductors
Vol. 37, No. 7, 2003
Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Conference. Review
III International Conference on Amorphous and Microcrystalline Semiconductors (July 2–4, 2002)
E. I. Terukov p. 741 abstract
Conference. Electronic and Optical Properties of Semiconductors
Electron Diffraction Investigation of Structural Diversity of Amorphous Films of Polymorphic TlInS2
D. I. Ismailov, M. V. Alieva, E. Sh. Alekperov, and F. I. Aliev p. 744 abstract
The Influence of a High and Low Content of Au Impurity on the Photoluminescence of Stoichiometric
and Nonstoichiometric Arsenic Sulfide
A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov,
E. I. Terukov, and I. N. Trapeznikova p. 748 abstract
Spectra of Fundamental Optical Functions of BeSe
V. Val. Sobolev and V. V. Sobolev p. 751 abstract
Optical Properties of Imperfect In2Se3
V. Val. Sobolev and V. V. Sobolev p. 757 abstract
Conference. Semiconductor Structures, Interfaces, and Surfaces
Spectral Photosensitivity of a-SiGe:H/c-Si Heterostructures
A. A. Sherchenkov p. 763 abstract
Conference. Amorphous, Vitreous, and Porous Semiconductors
Photoinduced Conductivity Change in Erbium-Doped Amorphous Hydrogenated Silicon Films
A. G. Kazanski
On Studying Nanoporous-Carbon-Based Composites by Small-Angle X-Ray Scattering
É. A. Smorgonskaya p. 769 abstract
Fullerene Single Crystals as Adsorbents of Organic Compounds
V. I. Berezkin, I. V. Viktorovski, A. Ya. Vul’, L. V. Golubev, V. N. Petrova, and L. O. Khoroshko p. 775 abstract
X-Raying Studies of the Nanoporous Carbon Structure Produced from Carbide Materials
R. N. Kyutt, A. M. Danishevski, É. A. Smorgonskaya, and S. K. Gordeev p. 784 abstract
The Influence of Deposition Conditions and Alloying on the Electronic Properties
of Amorphous Selenium
S. O. Kasap, K. V. Koughia, B. Fogal, G. Belev, and R. E. Johanson p. 789 abstract
Synthesis and Physical Properties of Si(Ge)–Se–Te Glasses
L. A. Kulakova, B. T. Melekh, V. I. Bakharev, and V. Kh. Kudoyarova p. 795 abstract
Effect of Rare-Earth Impurities on the Photoluminescence of Ge2S3 Glass
A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov,
E. I. Terukov, and I. N. Trapeznikova p. 800 abstract
Influence of the Order–Disorder Transition in the Crystal Electron Subsystem
on the Electron Density at Lattice Sites
N. P. Seregin, T. R. Stepanova, Yu. V. Kozhanova, V. P. Volkov,
P. P. Seregin, and N. N. Troitskaya p. 803 abstract
Organic Materials for Photovoltaic and Light-Emitting Devices
T. A. Yourre, L. I. Rudaya, N. V. Klimova, and V. V. Shamanin p. 807 abstract
Optical and Electrical Properties of Polyamide Acid and Metal–Polymer Complex Based on Terbium
É. A. Lebedev, M. Ya. Goikhman, M. E. Kompan, V. Kh. Kudoyarova, I. V. Podeshvo,
E. I. Terukov, and V. V. Kudryavtsev p. 816 abstract
Photosensitivity of New Photoconductive Polymers Based on Ruthenium–Biquinolyl Complexes
E. L. Aleksandrova, M. Ya. Gokhman, I. V. Podeshvo, I. V. Gofman, and V. V. Kudryavtsev p. 818 abstract
Optical and Photosensitive Properties of Comb-Shaped Polyamide-Imides
E. L. Aleksandrova, M. Ya. Gokhman, L. I. Subbotina, K. A. Romashkova, I. F. Gofman,
V. V. Kudryavtsev, and A. V. Yakimanskip. 821 abstract
A Study of the Effect of Oxygen on the Intensity of Erbium Photoluminescence
in Amorphous SiOx:(H, Er) Films Formed by DC Magnetron Sputtering
Yu. K. Undalov, E. I. Terukov, O. B. Gusev, and V. Kh. Kudoyarova p. 825 abstract
Conference. Physics of Semiconductor Devices
Splitting of Resonant Optical Modes in Fabry–Perot Microcavities
V. G. Golubev, A. A. Dukin, A. V. Medvedev, A. B. Pevtsov, A. V. Sel’kin, and N. A. Feoktistov p. 832 abstract
Atomic Structure and Nonelectronic Properties of Semiconductors
The Use of Magnesium to Dope Gallium Nitride Obtained by Molecular-Beam Epitaxy
from Activated Nitrogen
A. A. Vorob’ev, V. V. Korablev, and S. Yu. Karpov p. 838 abstract
Simulation of Growth Kinetics of Octahedral and Platelike Oxygen Precipitates in Silicon
V. V. Svetukhin, A. G. Grishin, and O. V. Prikhod’ko p. 843 abstract
Electronic and Optical Properties of Semiconductors
Special Features of Electron Spin Resonance in 4H-SiC in the Vicinity
of the Insulator–Metal Phase Transition: I. Effects of Spin Interaction
A. I. Venger, A. G. Zabrodski
, T. V. Tisnek, and E. N. Mokhov p. 846 abstract
Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties
of QD Arrays in InAs/GaAs System
V. G. Dubrovski, V. A. Egorov, G. E. Cirlin, N. K. Polyakov, Yu. B. Samsonenko,
N. V. Kryzhanovskaya, A. F. Tsatsul’nikov, and V. M. Ustinov p. 855 abstract
Low-Dimensional Systems
Control over the Parameters of InAs–GaAs Quantum Dot Arrays
in the Stranski–Krastanow Growth Mode
N. A. Cherkashin, M. V. Maksimov, A. G. Makarov, V. A. Shchukin, V. M. Ustinov, N. V. Lukovskaya,
Yu. G. Musikhin, G. E. Cirlin, N. A. Bert, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg p. 861 abstract
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