Contents
Semiconductors
Vol. 36, No. 7, 2002
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Reviews
WannierStark Localization in the Natural Superlattice of Silicon Carbide Polytypes
V. I. Sankin p. 717 abstract
Atomic Structure and Nonelectronic Properties of Semiconductors
Effect of Long-Term Annealing on Accumulation of Impurities
Yu. A. Bykovski, G. M. Voronkova, V. V. Grigorev, V. V. Zuev,
A. V. Zuev, A. D. Kiryukhin, V. I. Chmyrev, and S. A. Shcherbakov p. 740 abstract
Analysis of the Size-Distribution Function of Metallic Nanoclusters
in a Hydrogenated Amorphous Carbon Host
V. I. Ivanov-Omski, A. B. Lodygin, and S. G. Yastrebov p. 743 abstract
Electronic and Optical Properties of Semiconductors
Modification of the Electrical and Photoelectric Properties
of Mg0.15Cd0.85Te Solid Solutions as a Result
of Pulsed Laser Irradiation within the Transparency Range
A. Badullaeva, E. F. Venger, A. I. Vlasenko, A. V. Lomovtsev, and P. E. Mozol p. 747 abstract
Titanium, Vanadium, and Nickel Impurities in 3C-SiC: Electronic Structure
and Lattice Relaxation Effects
N. I. Medvedeva, É. I. Yuryeva, and A. L. Ivanovskip. 751 abstract
Parameters of Excitons in Monoclinic Zinc Diarsenide
A. I. Kozlov, S. G. Kozlova, A. V. Matveev, and V. V. Sobolev p. 755 abstract
Structure and Properties of Silicon Carbide Grown on Porous Substrate
by Vacuum Sublimation Epitaxy
N. S. Savkina, V. V. Ratnikov, A. Yu. Rogachev, V. B. Shuman,
A. S. Tregubova, and A. A. Volkova p. 758 abstract
The Effect of Composition on the Properties and Defect Structure
of the CdSGa2S3 Solid Solution
E. F. Venger, I. B. Ermolovich, V. V. Milenin, and V. P. Papusha p. 763 abstract
Microwave Magnetoresistance of Compensated p-Ge:Ga
in the Region of the InsulatorMetal Phase Transition
A. I. Venger, A. G. Zabrodski
, and T. V. Tisnek p. 772 abstract
Thermally Stimulated Currents in MnIn2S4 Single Crystals
N. N. Niftiev p. 782 abstract
E0 Photoreflectance Spectra of Semiconductor Structures
with a High Density of Interface States
R. V. Kuzmenko and É. P. Domashevskaya p. 784 abstract
Semiconductor Structures, Interfaces, and Surfaces
Switching Effect in SiCdS Heterojunctions Synthesized
in Highly Nonequilibrium Conditions
A. P. Belyaev and V. P. Rubets p. 789 abstract
Special Features of the Magnetodiode Effect in Multivalley Semiconductors
at Low Temperatures
A. A. Abramov and I. N. Gorbatyp. 793 abstract
Behavior of Charge in a Buried Insulator of Silicon-on-Insulator
Structures Subjected to Electric Fields
D. V. Nikolaev, I. V. Antonova, O. V. Naumova,
V. P. Popov, and S. A. Smagulova p. 800 abstract
Study of the Effect of Electron Irradiation on a GaSeSiO2 Structure
by Spectroscopic Methods
T. D. Ibragimov, E. A. Dzhafarova, and Z. B. Safarov p. 805 abstract
Low-Dimensional Systems
Calculation of the Low-Field Mobility of Quasi-Two-Dimensional Electrons
in a GaAs/Al0.36Ga0.64As Superlattice at Temperatures in the Region of 77 K
S. I. Borisenko p. 808 abstract
GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics
V. A. Solovev, A. A. Toropov, B. Ya. Meltser, Ya. A. Terentev,
R. N. Kyutt, A. A. Sitnikova, A. N. Semenov, S. V. Ivanov,
Motlan, E. M. Goldys, and P. S. Kopev p. 816 abstract
Inhomogeneous Broadening of the Ground Electron Level in a Quantum Dot Array
V. I. Belyavskiand S. V. Shevtsov p. 821 abstract
Physics of Semiconductor Devices
Optically Pumped Immersion-Lens Infrared Light Emitting Diodes Based
on Narrow-Gap IIIV Semiconductors
M. Adaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev,
M. A. Remenny, N. M. Stus, and G. N. Talalakin p. 828 abstract
Amorphization of the Surface Region in Epitaxial n-GaAs Treated
with Atomic Hydrogen
N. A. Torkhov, I. V. Ivonin, and E. V. Chernikov p. 832 abstract
Pleiades Publishing home page | journal home page | top
If you have any problems with this server, contact webmaster.