Contents
Semiconductors


Vol. 36, No. 7, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.


Reviews

Wannier–Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes

V. I. Sankin p. 717  abstract


Atomic Structure and Nonelectronic Properties of Semiconductors

Effect of Long-Term Annealing on Accumulation of Impurities

Yu. A. Bykovskiframe0, G. M. Voronkova, V. V. Grigor’ev, V. V. Zuev,
A. V. Zuev, A. D. Kiryukhin, V. I. Chmyrev, and S. A. Shcherbakov
p. 740  abstract

Analysis of the Size-Distribution Function of Metallic Nanoclusters
in a Hydrogenated Amorphous Carbon Host

V. I. Ivanov-Omskiframe1, A. B. Lodygin, and S. G. Yastrebov p. 743  abstract


Electronic and Optical Properties of Semiconductors

Modification of the Electrical and Photoelectric Properties
of Mg0.15Cd0.85Te Solid Solutions as a Result
of Pulsed Laser Irradiation within the Transparency Range

A. Baframe2dullaeva, E. F. Venger, A. I. Vlasenko, A. V. Lomovtsev, and P. E. Mozol’ p. 747  abstract

Titanium, Vanadium, and Nickel Impurities in 3C-SiC: Electronic Structure
and Lattice Relaxation Effects

N. I. Medvedeva, É. I. Yuryeva, and A. L. Ivanovskiframe3 p. 751  abstract

Parameters of Excitons in Monoclinic Zinc Diarsenide

A. I. Kozlov, S. G. Kozlova, A. V. Matveev, and V. V. Sobolev p. 755  abstract

Structure and Properties of Silicon Carbide Grown on Porous Substrate
by Vacuum Sublimation Epitaxy

N. S. Savkina, V. V. Ratnikov, A. Yu. Rogachev, V. B. Shuman,
A. S. Tregubova, and A. A. Volkova
p. 758  abstract

The Effect of Composition on the Properties and Defect Structure
of the CdS–Ga2S3 Solid Solution

E. F. Venger, I. B. Ermolovich, V. V. Milenin, and V. P. Papusha p. 763  abstract

Microwave Magnetoresistance of Compensated p-Ge:Ga
in the Region of the Insulator–Metal Phase Transition

A. I. Veframe4nger, A. G. Zabrodskiframe5, and T. V. Tisnek p. 772  abstract

Thermally Stimulated Currents in MnIn2S4 Single Crystals

N. N. Niftiev p. 782  abstract

E0 Photoreflectance Spectra of Semiconductor Structures
with a High Density of Interface States

R. V. Kuz’menko and É. P. Domashevskaya p. 784  abstract


Semiconductor Structures, Interfaces, and Surfaces

Switching Effect in Si–CdS Heterojunctions Synthesized
in Highly Nonequilibrium Conditions

A. P. Belyaev and V. P. Rubets p. 789  abstract

Special Features of the Magnetodiode Effect in Multivalley Semiconductors
at Low Temperatures

A. A. Abramov and I. N. Gorbatyframe6 p. 793  abstract

Behavior of Charge in a Buried Insulator of Silicon-on-Insulator
Structures Subjected to Electric Fields

D. V. Nikolaev, I. V. Antonova, O. V. Naumova,
V. P. Popov, and S. A. Smagulova
p. 800  abstract

Study of the Effect of Electron Irradiation on a GaSe–SiO2 Structure
by Spectroscopic Methods

T. D. Ibragimov, E. A. Dzhafarova, and Z. B. Safarov p. 805  abstract


Low-Dimensional Systems

Calculation of the Low-Field Mobility of Quasi-Two-Dimensional Electrons
in a GaAs/Al0.36Ga0.64As Superlattice at Temperatures in the Region of 77 K

S. I. Borisenko p. 808  abstract

GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics

V. A. Solov’ev, A. A. Toropov, B. Ya. Meltser, Ya. A. Terent’ev,
R. N. Kyutt, A. A. Sitnikova, A. N. Semenov, S. V. Ivanov,
Motlan, E. M. Goldys, and P. S. Kop’ev
p. 816  abstract

Inhomogeneous Broadening of the Ground Electron Level in a Quantum Dot Array

V. I. Belyavskiframe7 and S. V. Shevtsov p. 821  abstract


Physics of Semiconductor Devices

Optically Pumped “Immersion-Lens” Infrared Light Emitting Diodes Based
on Narrow-Gap III–V Semiconductors

M. Aframe8daraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev,
M. A. Remennyframe9, N. M. Stus’, and G. N. Talalakin
p. 828  abstract

Amorphization of the Surface Region in Epitaxial n-GaAs Treated
with Atomic Hydrogen

N. A. Torkhov, I. V. Ivonin, and E. V. Chernikov p. 832  abstract


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