Contents

Semiconductors

Vol. 59, No. 7, 2025

Optimization of Short-Channel Parameters in Silicon Nanowire FETs: A Comparative Study of Multigate Structures

Suruchi Saini, and Hitender Kumar Tyagi p. 597  abstract

Improving the Performance of NO2 Gas Sensor using Semiconducting Polymers and Graphene

Sujood Basim Jabr, and Raied K. Jamal p. 607  abstract

Simulation of Quantum Dot Nanocable Rectifiers Integrated with MgZnO/ZnO-based High Electron Mobility Transistors

Vinothkumar Karuppiah, and Kaleel Rahuman Abdul Kader p. 616  abstract

Smart Magnetic Nanoparticle-Polymer Systems for Targeted Cancer Therapy: a Review

G. Sanjay, K. Radhakrishnan, A. Dinesh, V. Mohanavel, Manikandan Ayyar, Rajendra P. Patil, Madhappan Santhamoorthy, Saravana Kumar Jaganathan, S. Santhoshkumar, Anish Khan, Pijush Kanti Mondal, Malik Abdul Rub, and Naved Azum p. 632  abstract

Effect of Hetero-Dielectric Gate on Direct Current, Radio Frequency/Analog, and Linearity Performance of Dual-Source Vertical Tunnel Field Effect Transistor for Low-Power Applications

Sheetal Singh, and Subodh Wairya p. 650  abstract

Hydrothermal Synthesis of Layered ZnWO4/CoWO4 Nanocomposites: A Novel Approach for High-Performance Supercapacitor Electrodes

Johnrose Arul Hency Sheela, S. Sakthivel, A. Dinesh, B. Kabilan, K. Rathika, Manikandan Ayyar, V. Mohanavel, M. Santhamoorthy, S. Santhoshkumar, Y. Slimani, M. A. Almessiere, and A. Baykal p. 661  abstract

Optical and Magnetic Properties of Co-V-doped TiO2 Synthesized via Chemical Route

Anup Kumar, Atendra Kumar, Dhanesh Tiwary, and Kamdeo Mandal p. 668  abstract

Performance Optimization of Channel Length Modulated Vertical Nanowire Tunnel Field Effect Transistors for High Frequency and Radio Frequency Applications

Anjana Bhardwaj, Amit Das, Ashish Gupta, Dhirendra Kumar, and Ranjeeta Yadav p. 678  abstract

Perovskite Compounds ABS3 (A = Rb, Cs, Tl) for Photovoltaic and Optoelectronic Applications: a DFT Study

A. Khelefhoum, Ly. Benbahouche, and S. Boucetta p. 686  abstract

Gain Enhanced Miller Compensated Operational Amplifier

Komal Duhan, Dr. Neelam Rup Prakash, Dr. Jasbir Kaur, and Sameeksha Munjal p. 701  abstract

Effect of Ge Mole Fraction on Performance Characteristics of Si1 – xGex-based Double Gate Field Effect Transistors

Ellapu Bhanu Prakash, Bhukya Harini, Ashok Ray, and Sushanta Bordoloi p. 711  abstract

A simulation study of 7 nm Si-based Multiple Gate Material Nanosheet Field Effect Transistors

Shankhamitra Sunani, Satya Sopan Mahato, Narayan Sahoo, Asisa Kumar Panigrahy, and Raghunandan Swain p. 724  abstract