Contents

Semiconductors

Vol. 55, No. 7, 2021

Structural and Optical Properties of MgO Thin Films Prepared by Dip-Coating Process: Effect of Thickness

R. Aouati, H. Djaaboube, A. Bouabelloul, A. Taabouche, Y. Bouachiba, W. Daranfad, A. Oudina and F. Kharfi p. 583  abstract

Surface Emitting Quantum-Cascade Ring Laser

A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, N. Yu. Kharin, V. Yu. Panevin, S. O. Slipchenko, A. V. Lyutetskii, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, N. A. Pikhtin and A. Yu. Egorov p. 591  abstract

Model of a “Two-Dimensional Metal–Graphene-Like Compound” Junction: Consideration for Interaction between the Components

S. Yu. Davydov and O. V. Posrednik p. 595  abstract

Uncooled Photodiodes for Detecting Pulsed Infrared Radiation in the Spectral Range of 0.9–1.8 μm

E. V. Kunitsyna, A. A. Pivovarova, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, N. D. Il’inskaya and Yu. P. Yakovlev p. 601  abstract

Thermal Stability of HfO2|AlGaN|GaN Normally-Off Transistors with Ni|Au and Pt Gate Metals

Y.-C. Lin, J.-S. Niu, W.-C. Liu and J.-H. Tsai p. 608  abstract

Optical Properties of Quasi-Bulk Gallium-Nitride Crystals with Highly Oriented Texture Structure

M. G. Mynbaeva, A. N. Smirnov and K. D. Mynbaev p. 617  abstract

C60 Fullerene Molecules under Single-Layer Graphene on a Metal Substrate

S. Sh. Rekhviashvili and M. M. Bukhurova p. 621  abstract

Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison

C. G. Rodrigues p. 625  abstract

Effect of Compressive and Stretching Strains on the Dislocation Luminescence Spectrum in Silicon

N. A. Sobolev, A. E. Kalyadin, O. V. Feklisova and E. B. Yakimov p. 633  abstract

Band Structure and Processes in the Electronic System of (Bi2 – xSbx)Te3 (0 < x < 2) Crystals, According to Optical Studies in the Infrared Range

N. P. Stepanov, A. A. Kalashnikov and O. N. Uryupin p. 637  abstract