Vol. 54, No. 7, 2020

Semiconductors

Review

Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review)

M. V. Lebedev p. 699 abstract

Surfaces, Interfaces, and Thin Films

First-Principle Investigation of the (001) Surface Reconstructions of GaSb and InSb Semiconductors

A. V. Bakulin and S. E. Kulkova p. 742 abstract

Effect of Interfaces and Thickness on the Crystallization Kinetics of Amorphous Germanium Films

G. K. Krivyakin, V. A. Volodin, G. N. Kamaev and A. A. Popov p. 754 abstract

AlGaInSbAs Solid Solutions Grown on InAs Substrates by Zone Recrystallization with a Temperature Gradient

L. S. Lunin, M. L. Lunina, D. L. Alfimova, A. S. Pashchenko, O. S. Pashchenko and N. M. Bogatov p. 759 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Scattering Matrix Method for Calculating the Spontaneous-Emission Probability in Cylindrically Symmetric Structures

V. V. Nikolaev, K. A. Ivanov, K. M. Morozov and A. V. Belonovski p. 765 abstract

2D SiC/Si Structure: Electron States and Adsorbability

S. Yu. Davydov and A. V. Zubov p. 774 abstract

Formation of GaN Nanorods in Monodisperse Spherical Mesoporous Silica Particles

E. Yu. Stovpiaga, D. A. Kurdyukov, D. A. Kirilenko and V. G. Golubev p. 782 abstract

Doping-Dependent Nonlinear Electron Mobility in GaAs|In_xGa_{1 –} _xAs Coupled Quantum-Well Pseudo-Morphic MODFET Structure

S. R. Panda, A. Sahu, S. Das, A. K. Panda and T. Sahu p. 788 abstract

Physics of Semiconductor Devices

Photodiodes for Detecting the Emission of Quantum-Sized Disc Lasers Operating in the Whispering Gallery Modes (2.2–2.3 μm)

E. V. Kunitsyna, M. A. Royz, I. A. Andreev, E. A. Grebenshchikova, A. A. Pivovarova, M. Ahmetoglu (Afrailov), Ya. V. Lebiadok, R. Yu. Mikulich, N. D. Iliinskaya and Yu. P. Yakovlev p. 796 abstract

Investigation of Pd|HfO₂|AlGaN|GaN Enhancement-Mode High Electron Mobility Transistor with Sensitization, Activation, and Electroless-Plating Approaches

Y.-C. Lin, J.-S. Niu, W.-C. Liu and J.-H. Tsai p. 803 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon

D. V. Yurasov, N. A. Baídakova, A. N. Yablonskiy and A. V. Novikov p. 811 abstract

GaAs Semiconductor Passivated by (NH₄)₂S_x: Analysis of Different Passivation Methods Using Electrical Characteristics and XPS Measurements