Contents
Semiconductors

Vol. 35, No. 7, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Reviews

Doping of Semiconductors Using Radiation Defects Produced by Irradiation
with Protons and Alpha Particles

V. A. Kozlov and V. V. Kozlovski p. 735  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

The Microstructure and Physical Properties of Thin SnO₂ Films

S. I. Rembeza, T. V. Svistova, E. S. Rembeza, and O. I. Borsyakova p. 762  abstract

Electronic and Optical Properties of Semiconductors

The Accuracy of Reconstructing the Semiconductor Doping Profile
from Capacitance–Voltage Characteristics Measured during Electrochemical Etching

I. R. Karetnikova, I. M. Nefedov, and V. I. Shashkin p. 766  abstract

Optical Properties of Cd_{1 – x}Zn_xTe (0 < x < 0.1) Single Crystals in the Infrared Spectral Region

A. I. Belogorokhov, V. M. Lakeenkov, and L. I. Belogorokhova p. 773  abstract

Metallic Conductivity over an Acceptor Band of the Lightly Compensated
Copper-Doped p-Hg_0.78Cd_0.22Te Crystals

V. V. Bogoboyashchi p. 777  abstract

Fermi Level Pinning and Electrical Properties of Irradiated Cd_xHg_{1 – x}Te Alloys

V. N. Brudny and S. N. Grinyaev p. 784  abstract

Semiconductor Structures, Interfaces, and Surfaces

Effect of Ballistic Electron Transport in Metal–n-GaAs–n⁺-GaAs Schottky-Barrier Structures

N. A. Torkhov p. 788  abstract

Calculation of the Variation in the Work Function Caused by Adsorption
of Metal Atoms on Semiconductors

S. Yu. Davydov and A. V. Pavlyk p. 796  abstract

Charge Transport in HgCdTe-based n⁺–p Photodiodes

J. V. Gumenjuk-Sichevskaja, F. F. Sizov, V. N. Ovsyuk, V. V. Vasil’ev, and D. G. Esaev p. 800  abstract

Low-Dimensional Systems

Electronic State Mixing in X_x and X_y Valleys in AlAs/GaAs (001)

G. F. Karavaev and V. N. Chernyshov p. 807  abstract

Amorphous, Vitreous, and Porous Semiconductors

Adsorption-based Porosimetry Using Capacitance Measurements

E. A. Tutov, A. Yu. Andryukov, and E. N. Bormontov p. 816  abstract

Structural Transformations and Silicon Nanocrystallite Formation in SiO_x Films

V. Ya. Bratus’, V. A. Yukhimchuk, L. I. Berezhinsky, M. Ya. Valakh, I. P. Vorona,
I. Z. Indutnyi, T. T. Petrenko, P. E. Shepeliavy, and I. B. Yanchuk p. 821  abstract

Physics of Semiconductor Devices

Luminescence Spectra and Efficiency of GaN-based Quantum-Well
Heterostructure Light Emitting Diodes: Current and Voltage Dependence

V. E. Kudryashov, S. S. Mamakin, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, and F. I. Manyakhin p. 827  abstract

Interaction of Metal Nanoparticles with a Semiconductor in Surface-Doped Gas Sensors

S. V. Ryabtsev, E. A. Tutov, E. N. Bormontov, A. V. Shaposhnik, and A. V. Ivanov p. 835  abstract

Cross-Sectional Electrostatic Force Microscopy of Semiconductor Laser Diodes

A. V. Ankudinov, E. Yu. Kotel’nikov, A. A. Kantsel’son, V. P. Evtikhiev, and A. N. Titkov p. 840  abstract

Comparative Analysis of Long-Wavelength (1.3 m) VCSELs on GaAs Substrates

N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, A. P. Vasil’ev,
V. M. Ustinov, N. N. Ledentsov, and Zh. I. Alferov p. 847  abstract

1.3 m Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices
Based on Them

A. V. Sakharov, I. L. Krestnikov, N. A. Maleev, A. R. Kovsh, A. E. Zhukov,
A. F. Tsatsul’nikov, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, J. A. Lott, and Zh. I. Alferov p. 854  abstract

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