Contents
Semiconductors
Vol. 35, No. 7, 2001
Simultaneous
English language translation of the journal is available from
MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors
ISSN 1063-7826.
Reviews
Doping of
Semiconductors Using Radiation Defects Produced by Irradiation
with Protons and Alpha Particles
V. A. Kozlov and V. V. Kozlovski p. 735 abstract
Atomic Structure and Nonelectronic Properties of Semiconductors
The Microstructure and Physical Properties of Thin SnO2 Films
S. I. Rembeza, T. V. Svistova, E. S. Rembeza, and O. I. Borsyakova p. 762 abstract
Electronic and Optical Properties of Semiconductors
The Accuracy of
Reconstructing the Semiconductor Doping Profile
from CapacitanceVoltage Characteristics Measured during
Electrochemical Etching
I. R. Karetnikova, I. M. Nefedov, and V. I. Shashkin p. 766 abstract
Optical Properties of Cd1 xZnxTe (0 < x < 0.1) Single Crystals in the Infrared Spectral Region
A. I. Belogorokhov, V. M. Lakeenkov, and L. I. Belogorokhova p. 773 abstract
Metallic
Conductivity over an Acceptor Band of the Lightly Compensated
Copper-Doped p-Hg0.78Cd0.22Te
Crystals
V. V. Bogoboyashchi
p. 777 abstract
Fermi Level Pinning and Electrical Properties of Irradiated CdxHg1 xTe Alloys
V. N. Brudny
and S. N. Grinyaev p. 784 abstract
Semiconductor Structures, Interfaces, and Surfaces
Effect of Ballistic Electron Transport in Metaln-GaAsn+-GaAs Schottky-Barrier Structures
N. A. Torkhov p. 788 abstract
Calculation of the
Variation in the Work Function Caused by Adsorption
of Metal Atoms on Semiconductors
S. Yu. Davydov and A. V. Pavlyk p. 796 abstract
Charge Transport in HgCdTe-based n+p Photodiodes
J. V. Gumenjuk-Sichevskaja, F. F. Sizov, V. N. Ovsyuk, V. V. Vasilev, and D. G. Esaev p. 800 abstract
Low-Dimensional Systems
Electronic State Mixing in Xx and Xy Valleys in AlAs/GaAs (001)
G. F. Karavaev and V. N. Chernyshov p. 807 abstract
Amorphous, Vitreous, and Porous Semiconductors
Adsorption-based Porosimetry Using Capacitance Measurements
E. A. Tutov, A. Yu. Andryukov, and E. N. Bormontov p. 816 abstract
Structural Transformations and Silicon Nanocrystallite Formation in SiOx Films
V. Ya. Bratus, V. A. Yukhimchuk, L. I. Berezhinsky, M. Ya. Valakh, I. P. Vorona,
I. Z. Indutnyi, T. T. Petrenko, P. E. Shepeliavy, and I. B. Yanchuk p. 821 abstract
Physics of Semiconductor Devices
Luminescence
Spectra and Efficiency of GaN-based Quantum-Well
Heterostructure Light Emitting Diodes: Current and Voltage
Dependence
V. E. Kudryashov, S. S. Mamakin, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, and F. I. Manyakhin p. 827 abstract
Interaction of Metal Nanoparticles with a Semiconductor in Surface-Doped Gas Sensors
S. V. Ryabtsev, E. A. Tutov, E. N. Bormontov, A. V. Shaposhnik, and A. V. Ivanov p. 835 abstract
Cross-Sectional Electrostatic Force Microscopy of Semiconductor Laser Diodes
A. V. Ankudinov, E. Yu. Kotelnikov, A. A. Kantselson, V. P. Evtikhiev, and A. N. Titkov p. 840 abstract
Comparative
Analysis of Long-Wavelength (1.3 m)
VCSELs on GaAs Substrates
N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, A. P. Vasilev,
V. M. Ustinov, N. N. Ledentsov, and Zh. I. Alferov p. 847 abstract
1.3 m
Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices
Based on Them
A. V. Sakharov, I. L. Krestnikov, N. A. Maleev, A. R. Kovsh, A. E. Zhukov,
A. F. Tsatsulnikov, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, J. A. Lott, and Zh. I. Alferov p. 854 abstract
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