Contents

Semiconductors

Vol. 53, No. 7, 2019

XVI International Conference “Thermoelectrics and Their Applications–2018” (ISCTA 2018), St. Petersburg, October 8–12, 2018

New Direction in the Application of Thermoelectric Energy Converters

Z. M. Dashevsky, P. P. Konstantinov and S. Ya. Skipidarov p. 861  abstract

Theoretical Modeling of the Thermoelectric Properties of Fe2Ti1 – xVxSn Heusler Alloys

Ye. Zh. Ashim, T. M. Inerbaev, A. T. Akilbekov, H. Miki, T. Takagi and V. V. Khovaylo p. 865  abstract

Thermoelectric Intensifier of Heat Transfer between Two Moving Media with Different Temperatures

D. K. Kadirova p. 869  abstract

Electronic Properties of Semiconductors

On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide

M. M. Kazanin, V. V. Kaminski and M. A. Grevtsev p. 872  abstract

Structure of the Energy Spectrum of Holes in IV–VI Materials from a Different Viewpoint

L. V. Prokofieva and P. P. Konstantinov p. 875  abstract

Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium

D. V. Yurasov, N. A. Baidakova, M. N. Drozdov, E. E. Morozova, M. A. Kalinnikov and A. V. Novikov p. 882  abstract

Surfaces, Interfaces, and Thin Films

On the Properties of Isoparametric AlInGaAsP/InP Heterostructures

D. L. Alfimova, L. S. Lunin, M. L. Lunina, A. S. Pashchenko and E. M. Danilina p. 887  abstract

Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions

M. V. Lebedev, T. V. Lvova, A. L. Shakhmin, O. V. Rakhimova, P. A. Dementev and I. V. Sedova p. 892  abstract

Spherical Distributed Bragg Reflector with an Omnidirectional Stop Band in the Near-IR Spectral Range

A. V. Medvedev, A. A. Dukin, N. A. Feoktistov and V. G. Golubev p. 901  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Electrical and Optical Properties of Unrelaxed InAs1 – xSbx Heteroepitaxial Structures

R. R. Guseynov, V. A. Tanriverdiyev, G. L. Belenky, G. Kipshidze, Y. N. Aliyeva, Kh. V. Aliguliyeva, E. G. Alizade, Kh. N. Ahmadova, N. A. Abdullayev, N. T. Mamedov and V. N. Zverev p. 906  abstract

Differences in the Impurity Ionization in Quasi-Classically Strong Constant and Alternating Electric Fields in a Two-Dimensional Superlattice Based on Graphene

P. V. Badikova, S. Yu. Glazov and G. A. Syrodoev p. 911  abstract

On the Thermal Activation of Conductivity Electrons in a p-Type HgTe/CdHgTe Double Quantum Well with HgTe Layers of Critical Width

S. M. Podgornykh, M. V. Yakunin, S. S. Krishtopenko, M. R. Popov, N. N. Mikhailov and S. A. Dvoretskii p. 919  abstract

On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure

E. P. Domashevskaya, D. L. Goloshchapov, Al Khailani Hasan Ismail Dambos, E. V. Rudnev, M. V. Grechkina and S. V. Ryabtsev p. 923  abstract

Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers

G. Yu. Vasilyeva, A. A. Greshnov, Yu. B. Vasilyev, N. N. Mikhailov, A. A. Usikova and R. J. Haug p. 930  abstract

Amorphous, Vitreous, and Organic Semiconductors

Dependence of the Conductivity of Porous Silicon Layers on the Carrier-Transport Direction

E. A. Guseva and E. A. Forsh p. 936  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Orientation Relationships upon the Structural Transformation of Monoclinic and Cubic Phases in Silver Sulfide

S. I. Sadovnikov and A. A. Rempel p. 941  abstract

Size Dependence of the Melting Point of Silicon Nanoparticles: Molecular Dynamics and Thermodynamic Simulation

I. V. Talyzin, M. V. Samsonov, V. M. Samsonov, M. Yu. Pushkar and V. V. Dronnikov p. 947  abstract

Carbon Systems

Epitaxial Carbyne: Analytical Results

S. Yu. Davydov p. 954  abstract

Physics of Semiconductor Devices

High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation

A. S. Kyuregyan p. 962  abstract

High-Voltage Diffused Step Recovery Diodes: II. Theory

A. S. Kyuregyan p. 969  abstract

Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons

O. M. Korolkov, V. V. Kozlovski, A. A. Lebedev, N. Sleptsuk, J. Toompuu and T. Rang p. 975  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides

L. K. Orlov, N. L. Ivina and V. A. Bozhenkin p. 979  abstract

Properties of Semipolar GaN Grown on a Si(100) Substrate

V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, N. V. Seredova, A. V. Solomnikova, M. P. Shcheglov, D. S. Kibalov and V. K. Smirnov p. 989  abstract

Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy

P. V. Seredin, A. S. Lenshin, D. S. Zolotukhin, D. L. Goloshchapov, A. M. Mizerov, I. N. Arsentyev and A. N. Beltyukov p. 993  abstract