Vol. 50, No. 7, 2016

Semiconductors

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Solubility of Oxygen in CdS Single Crystals and Their Physicochemical Properties

N. K. Morozova, A. A. Kanakhin and A. S. Shnitnikov p. 849 abstract

Structural and Optical Properties of GaAs(100) with a Thin Surface Layer Doped with Chromium

P. V. Seredin, A. V. Fedyukin, I. N. Arsentyev, L. S. Vavilova, I. S. Tarasov, T. Prutskij, H. Leiste and M. Rinke p. 853 abstract

Electronic Properties of Semiconductors

Features of Conductivity Mechanisms in Heavily Doped Compensated V_{1 –} _xTi_xFeSb Semiconductor

V. A. Romaka, P. Rogl, V. V. Romaka, D. Kaczorowski, Yu. V. Stadnyk, V. Ya. Krayovskyy and A. M. Horyn p. 860 abstract

Effect of Thallium Doping on the Mobility of Electrons in Bi₂Se₃ and Holes in Sb₂Te₃

A. A. Kudryashov, V. G. Kytin, R. A. Lunin, V. A. Kulbachinskii and A. Banerjee p. 869 abstract

Electron Exchange between Tin Impurity U^– Centers in PbS_zSe_{1 –} _z Alloys

A. V. Marchenko, E. I. Terukov, P. P. Seregin, A. N. Rasnjuk and V. S. Kiselev p. 876 abstract

Field Dependence of the Electron Drift Velocity along the Hexagonal Axis of 4H-SiC

P. A. Ivanov, A. S. Potapov, T. P. Samsonova and I. V. Grekhov p. 883 abstract

Spectroscopy, Interaction with Radiation

Effect of Coulomb Correlations on Luminescence and Absorption in Compensated Semiconductors

N. A. Bogoslovskiy, P. V. Petrov, Yu. L. Ivánov, N. S. Averkiev and K. D. Tsendin p. 888 abstract

Surfaces, Interfaces, and Thin Films

Local Emission Spectroscopy of Surface Micrograins in A^IIIB^V Semiconductors

N. D. Zhukov, E. G. Gluhovskoy and D. S. Mosiyash p. 894 abstract

Indium Nanowires at the Silicon Surface

A. S. Kozhukhov, D. V. Sheglov and A. V. Latyshev p. 901 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Specific Features of the Cathodoluminescence Spectra of AlInGaN QWs, Caused by the Influence of Phase Separation and Internal Electric Fields

Ya. V. Kuznetsova, V. N. Jmerik, D. V. Nechaev, A. M. Kuznetsov and M. V. Zamoryanskaya p. 904 abstract

Effect of Multicomponent InAsSbP Matrix Surface on Formation of InSb Quantum Dots at MOVPE Growth

V. V. Romanov, P. A. Dement’ev and K. D. Moiseev p. 910 abstract

Terahertz Emission from CdHgTe/HgTe Quantum Wells with an Inverted Band Structure

Yu. B. Vasilyev, N. N. Mikhailov, G. Yu. Vasilyeva, Yu. L. Ivánov, A. O. Zakhar’in, A. V. Andrianov, L. E. Vorobiev, D. A. Firsov, M. N. Grigoriev, A. V. Antonov, A. V. Ikonnikov and V. I. Gavrilenko p. 915 abstract

Semi-Insulating 4H-SiC Layers Formed by the Implantation of High-Energy (53 MeV) Argon Ions into n-Type Epitaxial Films

P. A. Ivanov, M. F. Kudoyarov, M. A. Kozlovski, A. S. Potapov and T. P. Samsonova p. 920 abstract

Study of Deep Levels in GaAs p–i–n Structures

M. M. Sobolev, F. Yu. Soldatenkov and V. A. Kozlov p. 924 abstract

Photovoltage and Photocurrent in Pd–Oxide–InP Structures in a Hydrogen Medium

A. N. Imenkov, E. A. Grebenshchikova, V. A. Shutaev, A. M. Ospennikov, V. V. Sherstnev and Yu. P. Yakovlev p. 929 abstract

Optical Properties of p–i–n Structures Based on Amorphous Hydrogenated Silicon with Silicon Nanocrystals Formed via Nanosecond Laser Annealing

G. K. Krivyakin, V. A. Volodin, S. A. Kochubei, G. N. Kamaev, A. Purkrt, Z. Remes, R. Fajgar, T. H. Stuchliková and J. Stuchlik p. 935 abstract

Amorphous, Vitreous, and Organic Semiconductors

Voltage Oscillations in the Case of the Switching Effect in Thin Layers of Ge–Sb–Te Chalcogenides in the Current Mode

S. A. Fefelov, L.P. Kazakova, D. Arsova, S. A. Kozyukhin, K. D. Tsendin and O.Yu. Prikhodko p. 941 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Nonlinear Optical Response of Planar and Spherical CdSe Nanocrystals

A. S. Selyukov, A. A. Isaev, A. G. Vitukhnovsky, V. L. Litvak, A. V. Katsaba, V. M. Korshunov and R. B. Vasiliev p. 947 abstract

Carbon Systems

Electron-Diffraction Study of Graphene-Film Growth Stages during the Thermal Destruction of 6H-SiC (000$\bar 1$) in Vacuum

I. S. Kotousova, S. P. Lebedev and A. A. Lebedev p. 951 abstract

Physics of Semiconductor Devices

Effect of the Anode-Emitter Injection Efficiency on the Characteristics of Hybrid SIT–MOS Transistors

A. S. Kyuregyan, A. V. Gorbatyuk and B. V. Ivanov p. 957 abstract

Electrochemical Lithiation of Silicon with Varied Crystallographic Orientation

E. V. Astrova, A. M. Rumyantsev, G. V. Li, A. V. Nashchekin, D. Yu. Kazantsev, B. Ya. Ber and V. V. Zhdanov p. 963 abstract

On Current Spreading in Solar Cells: a Two-Parameter Tube Model

M. A. Mintairov, V. V. Evstropov, S.A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts and N. A. Kalyuzhnyy p. 970 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Quantum Dots Grown in the InSb/GaSb System by Liquid-Phase Epitaxy

Ya. A. Parkhomenko, P. A. Dement’ev and K. D. Moiseev p. 976 abstract

Chloride Epitaxy of β-Ga₂O₃ Layers Grown on c-Sapphire Substrates

V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, Sh. Sh. Sharofidinov, A. A. Golovatenko, I. P. Nikitina, A. N Smirnov, V. E. Bugrov, A. E. Romanov, P. N. Brunkov and D. A. Kirilenko p. 980 abstract

Technique for Forming ITO Films with a Controlled Refractive Index

L. K. Markov, I. P. Smirnova, A. S. Pavluchenko, M. V. Kukushkin, D. A. Zakheim and S. I. Pavlov p. 984 abstract

Contents