Contents
Semiconductors

Vol. 47, No. 7, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Formation of Structures with Noncatalytic CdTe Nanowires

I. P. Soshnikov, V. A. Petrov, Y. Y. Proskuryakov, D. A. Kudryashov, A. V. Nashchekin,
G. E. Cirlin, R. Treharne, and K. Durose p. 875  abstract

Electronic Properties of Semiconductors

Theory of Transport Phenomena in Polycrystalline Lead Chalcogenide Films.
Mobility. Nondegenerate Statistics

Sh. B. Atakulov, S. M. Zaynolobidinova, G. A. Nabiev, M. B. Nabiyev, and A. A. Yuldashev p. 879  abstract

Features of the Electric-Field Distribution in Anisotropic Semiconductor Wafers
in a Transverse Magnetic Field

V. V. Filippov and E. N. Bormontov p. 884  abstract

Effect of the Accumulation of Excess Ni Atoms in the Crystal Structure
of the Intermetallic Semiconductor n-ZrNiSn

V. A. Romaka, P. Rogl, V. V. Romaka, Yu. V. Stadnyk, E. K. Hlil,
V. Ya. Krajovskii, and A. M. Horyn p. 892  abstract

New Acceptor Centers of the Background Impurities in p-CdZnTe

S. V. Plyatsko and L. V. Rashkovetskyi p. 899  abstract

Spectroscopy, Interaction with Radiation

Absorption and Photoluminescence of Ternary Nanostructured Ge–S–Ga(In)Glassy
Semiconductor Systems

A. A. Babaev and V. Kh. Kudoyarova p. 908  abstract

Absorption and Photoionization of the Donor Level in CdF₂ Semiconductor Crystals

S. A. Kazanskii, A. S. Shcheulin, A. E. Angervaks, and A. I. Ryskin p. 911  abstract

Surfaces, Interfaces, and Thin Films

Charge Transport Mechanisms in Schottky Diodes Based on Low-Resistance CdTe:Mn

L. A. Kosyachenko, N. S. Yurtsenyuk, I. M. Rarenko, V. M. Sklyarchuk,
O. F. Sklyarchuk, Z. I. Zakharuk, and E. V. Grushko p. 916  abstract

Topological Size Effect in Tin-Dioxide Cluster Films Produced by Reactive Sputtering

L. S. Maksimenko, I. E. Matyash, O. N. Mishchuk, S. P. Rudenko, and B. K. Serdega p. 925  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Statistical Analysis of AFM Topographic Images of Self-Assembled Quantum Dots

V. A. Sevriuk, P. N. Brunkov, I. V. Shalnev, A. A. Gutkin, G. V. Klimko,
S. V. Gronin, S. V. Sorokin, and S. G. Konnikov p. 930  abstract

Persistent Photoconductivity and Electron Mobility
in In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As/InP Quantum-Well Structures

V. A. Kulbachinskii, R. A. Lunin, N. A. Yuzeeva, I. S. Vasilievskii, G. B. Galiev, and E. A. Klimov p. 935  abstract

Electrical and Photoelectric Properties of n-CdO–p-InSe Anisotype Heterojunctions

V. N. Katerynchuk, Z. R. Kudrynskyi, V. V. Khomyak, I. G. Orletsky, and V. V. Netyaga p.943  abstract

Terahertz Electroluminescence of Fibonacci Superlattices

K. V. Malyshev p. 947  abstract

Amorphous, Vitreous, and Organic Semiconductors

Ultralow-Frequency Photoelectric Response of Amorphous As₂Se₃ Layers

N. I. Anisimova, V. A. Bordovsky, G. I. Grabko, and R. A. Castro p. 952  abstract

Electronic Properties of the Interface between Hexadecafluoro Copper Phthalocyanine
and Unsubstituted Copper Phthalocyanine Films

A. S. Komolov, E. F. Lazneva, S. A. Pshenichnyuk, A. A. Gavrikov, N. S. Chepilko,
A. A. Tomilov, N. B. Gerasimova, A. A. Lezov, and P. S. Repin p. 956  abstract

Carbon Systems

Adsorption on Tunable Bilayer Graphene: A Model Approach

Z. Z. Alisultanov p. 962  abstract

Physics of Semiconductor Devices

Mechanism of Electronic-Excitation Transfer in Organic Light-Emitting Devices Based
on Semiconductor Quantum Dots

A. G. Vitukhnovskii, A. A. Vashchenko, V. S. Lebedev, R. B. Vasiliev,
P. N. Brunkov, and D. N. Bychkovskii p. 971  abstract

Theory of Steady-State Plane Tunneling-Assisted Impact Ionization Waves

A. S. Kyuregyan p. 978  abstract

Effect of Ultrasonic Loading on Current in Mo/n–n⁺-Si with Schottky Barriers

O. Ya. Olikh p. 987  abstract

Single-Spatial-Mode Semiconductor VCSELs with a Nonplanar Upper Dielectric DBR

N. A. Maleev, A. G. Kuz’menkov, M. M. Kulagina, Yu. M. Zadiranov, A. P. Vasil’ev,
S. A. Blokhin, A. S. Shulenkov, S. I. Troshkov, A. G. Gladyshev, A. M. Nadtochiy,
M. M. Pavlov, M. A. Bobrov, D. E. Nazaruk, and V. M. Ustinov p. 993  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Study of New Designs for the InAlAs Metamorphic Buffer on GaAs Substrates
with Distributed Compensation of Elastic Deformations

G. B. Galiev, S. S. Pushkarev, I. S. Vasil’evskii, E. A. Klimov, and R. M. Imamov p. 997  abstract

Properties of Sb₂S₃ and Sb₂Se₃ Thin Films Obtained by Pulsed Laser Ablation

I. S. Virt, I. O. Rudyj, I. V. Kurilo, I. Ye. Lopatynskyi, L. F. Linnik,
V. V. Tetyorkin, P. Potera, and G. Luka p. 1003  abstract

Effect of Surface Passivation by SiN/SiO₂ of AlGaN/GaN High-Electron
Mobility Transistors on Si Substrate by Deep Level Transient Spectroscopy Method

Malek Gassoumi, Hana Mosbahi, Mohamed Ali Zaidi,
Christophe Gaquiere, and Hassen Maaref p.1008  abstract

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