Contents
Semiconductors

Vol. 45, No. 7, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Coherent Phase Equilibria in the Zn–Cd–Te System and Liquid-Phase Epitaxy
of Elastically Strained Zn_xCd_1–xTe Alloy Layers

P. P. Moskvin, L. V. Rashkovetskii, F. F. Sizov, and V. A. Moshnikov p. 837  abstract

Electronic Properties of Semiconductors

Thermoelectric Properties of BiTeI with Addition of BiI₃, CuI, and Overstoichiometric Bi

V. A. Kulbachinskii, V. G. Kytin, Z. V. Lavrukhina, A. N. Kuznetsov,
A. V. Markelov, and A. V. Shevelkov p. 845  abstract

Features of a priori Heavy Doping of the n-TiNiSn Intermetallic Semiconductor

V. A. Romaka, P. Rogl, V. V. Romaka, E. K. Hlil, Yu. V. Stadnyk, and S. M. Budgerak p. 850  abstract

Transient Spectroscopy of Ryvkin’s Centers

A. P. Odrinsky p. 857  abstract

Magnetic Properties of the FeIn₂S₄ Ternary-Compound Crystals

I. V. Bodnar and S. V. Trukhanov p. 861  abstract

Deep Electron Levels in Undoped Polycrystalline CdTe Annealed in Liquid Cd

E. A. Bobrova and Y. V. Klevkov p. 865  abstract

Spectroscopy, Interaction with Radiation

Photoluminescence of Hg_1–xCd_xTe Based Heterostructures Grown
by Molecular-Beam Epitaxy

K. D. Mynbaev, N. L. Bazhenov, V. I. Ivanov-Omskii, N. N. Mikhailov,
M. V. Yakushev, A. V. Sorochkin, V. G. Remesnik, S. A. Dvoretsky,
V. S. Varavin, and Yu. G. Sidorov p. 872  abstract

Photoluminescence of CdTe Grown in Conditions Considerably Deviating
from Thermodynamic Equilibrium

V. S. Bagaev, Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok,
E. E. Onishchenko, and A. A. Shepel p. 880  abstract

Surfaces, Interfaces, and Thin Films

The Effect of Morphology and Surface Composition on Radiation Resistance
of Heterogeneous Material CdS–PbS

I. V. Malyar and S. V. Stetsyura p. 888  abstract

Dependence of Conductivity of an Illuminated Nonideal Heterojunction on External Bias

V. A. Borschak, V. A. Smyntyna, Ie. V. Brytavskyi, A. P. Balaban, and N. P. Zatovskaya p. 894  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Longitudinal Conductivity of Layered Charge-Ordered Crystals
in a High Quantizing Magnetic Field

P. V. Gorskyi p. 900  abstract

Photoconductivity of Si/Ge Multilayer Structures
with Ge Quantum Dots Pseudomorphic to the Si Matrix

A. B. Talochkin and I. B. Chistokhin p.907  abstract

Quaternary (FeIn₂S₄)_x(MnIn₂S₄)_1–x Alloys and Photosensitive Structures on Their Basis

I. V. Bodnar, V. Yu. Rud, Yu. V. Rud, and D. V. Lozhkin p. 912  abstract

Effect of Localization in Quantum Wells and Quantum Wires
on Heavy–Light Hole Mixing and Acceptor Binding Energy

M. A. Semina and R. A. Suris p. 917  abstract

Defects in the Crystal Structure of Cd_xHg_1–xTe Layers Grown on the Si (310) Substrates

M. V. Yakushev, A. K. Gutakovsky, I. V. Sabinina, and Yu. G. Sidorov p. 926  abstract

Effect of Photovoltage on Current Flow in Metal–Semiconductor Schottky-Barrier Contacts

N. A. Torkhov p. 935  abstract

Manifestation of Excess Centers of Electron–Hole Pair Generation Resulting
from Field and Thermal Stresses and their Subsequent Annihilation
in Dynamic Current–Voltage Characteristics of Si-MOS Structures with Ultrathin Oxide

E. I. Goldman, N. F. Kukharskaya, V. G. Narishkina, and G. V. Chucheva p. 944  abstract

Amorphous, Vitreous, and Organic Semiconductors

Terbium Luminescence in Alumina Xerogel Fabricated
in Porous Anodic Alumina Matrix under Various Excitation Conditions

N. V. Gaponenko, V. S. Kortov, T. I. Orekhovskaya, I. A. Nikolaenko, V. A. Pustovarov,
S. V. Zvonarev, A. I. Slesarev, and S. Ya. Prislopski p. 950  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Electrical and Photoelectric Properties of Nanostructures Obtained
by Electroless Etching of Silicon

D. I. Bilenko, V. V. Galushka, E. A. Jarkova, I. B. Mysenko, D. V. Terin, and E. I. Hasina p. 954  abstract

Carbon Systems

On the Thermal Stability of Graphone

A. I. Podlivaev and L. A. Openov p. 958  abstract

Physics of Semiconductor Devices

Effect of AlGaAs–(AlGa)_xO_y Pedestal Parameters on Characteristics
of a Microdisk Laser with Active Region Based on InAs/InGaAs Quantum Dots

N. V. Kryzhanovskaya, S. A. Blokhin, M. V. Maximov, A. M. Nadtochy, A. E. Zhukov,
K. V. Fedorova, N. N. Ledentsov, V. M. Ustinov, N. D. Il’inskaya, and D. Bimberg p. 962  abstract

Effect of the Nonlinear Saturation of the Gain on the Peak Modulation Frequency
in Lasers Based on Self-Assembled Quantum Dots

A. E. Zhukov, E. M. Arakcheeva, N. Yu. Gordeev, F. I. Zubov, N. V. Kryzhanovskaya,
M. V. Maximov, and A. V. Savelyev p. 966  abstract

Rules for the Authors p.971

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