Contents
Semiconductors

Vol. 44, No. 7, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electrical and Optical Properties of Semiconductors

Photoprocesses in a Semiconducting Carbon Photocapacitor with a Double Electrical Layer

F. O. Ivashchyshyn, I. I. Grygorchak, and B. P. Bakhmatyuk p. 835  abstract

Physics with Isotopically Controlled Semiconductors

E. E. Haller p. 841  abstract

Photoinduced Current Transient Spectroscopy of High-Resistivity Layered GaSe Crystals

A. P. Odrinsky p. 854  abstract

Optical Properties of Quaternary GaN_xAs_yP_1–x–y Semiconductor Alloys

A. Yu. Egorov, N. V. Kryzhanovskaya, E. V. Pirogov, and M. M. Pavlov p. 857  abstract

Dependence of Photoluminescence Spectra of Epitaxial Pb_1–xEu_xTe (0 x 0.1)
Alloy Layers on Conditions of Growth

D. A. Pashkeev, Yu. G. Selivanov, F. Felder, and I. I. Zasavitskiy p. 861  abstract

Calculation of the Charge-Carrier Mobility in Diamond at Low Temperatures

A. S. Baturin, V. N. Gorelkin, V. R. Soloviev, and I. V. Chernousov p. 867  abstract

Semiconductor Structures, Interfaces, and Surfaces

Bistable Low Temperature (77 K) Impurity Breakdown in p-Type 4H-SiC

P. A. Ivanov, A. S. Potapov, and T. P. Samsonova p. 872  abstract

Features of Conduction Mechanisms in Si/oligo--Naphthol/Metal Heterostructures

Sh. M. Hasannli, N. N. Mursakulov, U. F. Samedova, N. N. Abdulzade,
B. A. Mamedov, and R. K. Guseynov p. 875  abstract

Low-Dimensional Systems

Effect of Rectification of Current Induced by an Electromagnetic Wave in Graphene:
A Numerical Simulation

D. V. Zavyalov, S. V. Kryuchkov, and T. A. Tyul’kina p. 879  abstract

Evolution of Exciton States near the Percolation Threshold
in Two-Phase Systems with II–VI Semiconductor Quantum Dots

N. V. Bondar and M. S. Brodyn p. 884  abstract

Study of Defects in Heterostructures with GaPAsN
and GaPN Quantum Wells in the GaP Matrix

O. I. Rumyantsev, P. N. Brunkov, E. V. Pirogov, and A. Yu. Egorov p. 893  abstract

Electron Transport in an In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As Quantum Well
with a -Si Doped Barrier in High Electric Fields

I. S. Vasil’evskii, G. B. Galiev, Yu. A. Matveev, E. A. Klimov, J. Pozela, K. Pozela,
A. Suziedelis, C. Paskevic, and V. Juciene p.898  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Varistor Effect in Polymer–Semiconductor Composites

M. K. Kerimov, M. A. Kurbanov, I. S. Sultanahmedova, I. A. Faradzhzade,
F. N. Tatardar, H. S. Aliyev, F. F. Yahyaev, and U. V. Yusifova p. 904  abstract

Numerical Simulation of Time-Dependent Geminate Recombination in Polymers

N. A. Korolev, V. R. Nikitenko, and A. P. Tyutnev p. 912  abstract

Physics of Semiconductor Devices

Double Pulse Doped InGaAs/AlGaAs/GaAs Pseudomorphic
High-Electron-Mobility Transistor Heterostructures

A. Yu. Egorov, A. G. Gladyshev, E. V. Nikitina, D. V. Denisov, N. K. Polyakov,
E. V. Pirogov, and A. A. Gorbazevich p. 919  abstract

The Use of Short-Period InGaN/GaN Superlattices in Blue-Region Light-Emitting Diodes

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin,
N. A. Cherkashin, M. J. Hÿtch, A. E. Nikolaev, A. M. Mintairov, Yan He, and J. L. Merz p. 924  abstract

Ultrahigh-Power Picosecond Current Switching
by a Silicon Sharpener Based on Successive Breakdown of Structures

S. K. Lyubutin, S. N. Rukin, B. G. Slovikovsky, and S. N. Tsyranov p. 931  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Growth of (InSb)_1–x(Sn₂)_x Films on GaAs Substrates by Liquid-Phase Epitaxy

A. S. Saidov, M. S. Saidov, Sh. N. Usmonov, and U. P. Asatova p. 938  abstract

Influence of the Method of Synthesis on Properties
of Cadmium Telluride Films Synthesized in Highly Nonequilibrium Conditions

A. P. Belyaev, V. P. Rubets, V. V. Antipov, and E. O. Eremina p. 946  abstract

Structural and Optical Properties of InAlN/GaN Distributed Bragg Reflectors

S. O. Usov, E. E. Zavarin, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Sakharov,
A. E. Nikolaev, M. A. Sinitsyn, N. V. Kryzhanovskaya, S. I. Troshkov, and N. N. Ledentsov p. 949  abstract

Fabrication of One-Dimensional Photonic Crystals
by Photoelectrochemical Etching of Silicon

Yu. A. Zharova, G. V. Fedulova, E. V. Gushchina, A. V. Ankudinov, E. V. Astrova,
V. A. Ermakov, and T. S. Perova p. 954  abstract

MBE Growth and Characterization of 5-m Quantum-Cascade Lasers

V. V. Mamutin, V. M. Ustinov, J. Boetthcher, and H. Kuenzel p. 962  abstract

The Problem of Uniformity of Properties of 4H-SiC CVD Films

A. M. Ivanov, N. B. Strokan, N. A. Scherbov, and A. A. Lebedev p.969 abstract

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