Contents
Semiconductors
Vol. 44, No. 7, 2010
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Electrical and Optical Properties of Semiconductors
Photoprocesses in a Semiconducting Carbon Photocapacitor with a Double Electrical Layer
F. O. Ivashchyshyn, I. I. Grygorchak, and B. P. Bakhmatyuk p. 835 abstract
Physics with Isotopically Controlled Semiconductors
E. E. Haller p. 841 abstract
Photoinduced Current Transient Spectroscopy of High-Resistivity Layered GaSe Crystals
A. P. Odrinsky p. 854 abstract
Optical Properties of Quaternary GaNxAsyP1xy Semiconductor Alloys
A. Yu. Egorov, N. V. Kryzhanovskaya, E. V. Pirogov, and M. M. Pavlov p. 857 abstract
Dependence of Photoluminescence Spectra of Epitaxial Pb1xEuxTe (0 x
0.1)
Alloy Layers on Conditions of Growth
D. A. Pashkeev, Yu. G. Selivanov, F. Felder, and I. I. Zasavitskiy p. 861 abstract
Calculation of the Charge-Carrier Mobility in Diamond at Low Temperatures
A. S. Baturin, V. N. Gorelkin, V. R. Soloviev, and I. V. Chernousov p. 867 abstract
Semiconductor Structures, Interfaces, and Surfaces
Bistable Low Temperature (77 K) Impurity Breakdown in p-Type 4H-SiC
P. A. Ivanov, A. S. Potapov, and T. P. Samsonova p. 872 abstract
Features of Conduction Mechanisms in Si/oligo--Naphthol/Metal Heterostructures
Sh. M. Hasannli, N. N. Mursakulov, U. F. Samedova, N. N. Abdulzade,
B. A. Mamedov, and R. K. Guseynov p. 875 abstract
Low-Dimensional Systems
Effect of Rectification of Current Induced by an Electromagnetic Wave in Graphene:
A Numerical Simulation
D. V. Zavyalov, S. V. Kryuchkov, and T. A. Tyulkina p. 879 abstract
Evolution of Exciton States near the Percolation Threshold
in Two-Phase Systems with IIVI Semiconductor Quantum Dots
N. V. Bondar and M. S. Brodyn p. 884 abstract
Study of Defects in Heterostructures with GaPAsN
and GaPN Quantum Wells in the GaP Matrix
O. I. Rumyantsev, P. N. Brunkov, E. V. Pirogov, and A. Yu. Egorov p. 893 abstract
Electron Transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Well
with a -Si Doped Barrier in High Electric Fields
I. S. Vasilevskii, G. B. Galiev, Yu. A. Matveev, E. A. Klimov, J. Pozela, K. Pozela,
A. Suziedelis, C. Paskevic, and V. Juciene p.898 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Varistor Effect in PolymerSemiconductor Composites
M. K. Kerimov, M. A. Kurbanov, I. S. Sultanahmedova, I. A. Faradzhzade,
F. N. Tatardar, H. S. Aliyev, F. F. Yahyaev, and U. V. Yusifova p. 904 abstract
Numerical Simulation of Time-Dependent Geminate Recombination in Polymers
N. A. Korolev, V. R. Nikitenko, and A. P. Tyutnev p. 912 abstract
Physics of Semiconductor Devices
Double Pulse Doped InGaAs/AlGaAs/GaAs Pseudomorphic
High-Electron-Mobility Transistor Heterostructures
A. Yu. Egorov, A. G. Gladyshev, E. V. Nikitina, D. V. Denisov, N. K. Polyakov,
E. V. Pirogov, and A. A. Gorbazevich p. 919 abstract
The Use of Short-Period InGaN/GaN Superlattices in Blue-Region Light-Emitting Diodes
V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin,
N. A. Cherkashin, M. J. Hÿtch, A. E. Nikolaev, A. M. Mintairov, Yan He, and J. L. Merz p. 924 abstract
Ultrahigh-Power Picosecond Current Switching
by a Silicon Sharpener Based on Successive Breakdown of Structures
S. K. Lyubutin, S. N. Rukin, B. G. Slovikovsky, and S. N. Tsyranov p. 931 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Growth of (InSb)1x(Sn2)x Films on GaAs Substrates by Liquid-Phase Epitaxy
A. S. Saidov, M. S. Saidov, Sh. N. Usmonov, and U. P. Asatova p. 938 abstract
Influence of the Method of Synthesis on Properties
of Cadmium Telluride Films Synthesized in Highly Nonequilibrium Conditions
A. P. Belyaev, V. P. Rubets, V. V. Antipov, and E. O. Eremina p. 946 abstract
Structural and Optical Properties of InAlN/GaN Distributed Bragg Reflectors
S. O. Usov, E. E. Zavarin, A. F. Tsatsulnikov, V. V. Lundin, A. V. Sakharov,
A. E. Nikolaev, M. A. Sinitsyn, N. V. Kryzhanovskaya, S. I. Troshkov, and N. N. Ledentsov p. 949 abstract
Fabrication of One-Dimensional Photonic Crystals
by Photoelectrochemical Etching of Silicon
Yu. A. Zharova, G. V. Fedulova, E. V. Gushchina, A. V. Ankudinov, E. V. Astrova,
V. A. Ermakov, and T. S. Perova p. 954 abstract
MBE Growth and Characterization of 5-m Quantum-Cascade Lasers
V. V. Mamutin, V. M. Ustinov, J. Boetthcher, and H. Kuenzel p. 962 abstract
The Problem of Uniformity of Properties of 4H-SiC CVD Films
A. M. Ivanov, N. B. Strokan, N. A. Scherbov, and A. A. Lebedev p.969 abstract
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