Contents
Semiconductors

Vol. 42, No. 6, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Review

Sources of Spontaneous Emission Based on Indium Arsenide

N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev,
M. A. Remennyi, and N. M. Stus’ p. 625  abstract

Electronic and Optical Properties of Semiconductors

Wave Functions of Hot Excitons in Semiconductors with Degenerate Bands

A. V. Efanov p. 642  abstract

Dependence of the Electrical Parameters of MBE-Grown Cd_xHg_1 – xTe Films
on the Level of Doping with Indium

V. S. Varavin, S. A. Dvoretski, D. G. Ikusov, N. N. Mikhalov, Yu. G. Sidorov,
G. Yu. Sidorov, and M. V. Yakushev p. 648  abstract

Effect of the Arsenic Cracking Zone Temperature on the Efficiency
of Arsenic Incorporation in CdHgTe Films in Molecular-Beam Epitaxy

G. Yu. Sidorov, N. N. Mikhalov, V. S. Varavin, D. G. Ikusov,
Yu. G. Sidorov, and S. A. Dvoretski p. 651  abstract

Electronic Characteristics of the Singly Ionized Pair of Phosphorus Donors
in Silicon and Operations with Charge Qubits

A. N. Voron’ko p. 655  abstract

Semiconductor Structures, Interfaces, and Surfaces

Features of Long-Term Relaxation of Capacitance in Rectifying Structures Based on n-ZnP₂

I. G. Stamov and D. V. Tkachenko p. 662  abstract

X-ray Spectrum Microanalysis of Semiconductor Epitaxial Heterostructures
on the Basis of a Monte Carlo Simulation of Electron Transport

T. B. Popova, L. A. Bakalenikov, M. V. Zamoryanskaya, and E. Yu. Flegontova p. 669  abstract

Relaxation of Parameters of Thin-Film Electroluminescent
ZnS:Mn-Based Structures when Turned Off

N. T. Gurin and O. Yu. Sabitov p. 675  abstract

Mechanism of Dislocation-Governed Charge Transport
in Schottky Diodes Based on Gallium Nitride

A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, V. P. Klad’ko, R. V. Konakova,
Ya. Ya. Kudrik, A. V. Kuchuk, V. V. Milenin, Yu. N. Sveshnikov, and V. N. Sheremet p. 689  abstract

Low-Dimensional Systems

Hybrid–Phonon Resonances in a Quantum Channel

V. V. Karpunin and V. A. Margulis p. 694  abstract

Changes in Optical Properties of CdS Nanoclusters in Langmuir–Blodgett Films
on Passivation in Ammonia

E. A. Bagaev, K. S. Zhuravlev, L. L. Sveshnikova, and D. V. Shcheglov p. 702  abstract

Lateral Ordering of GaAs Nanowhiskers on GaAs(111)As
and GaAs (110) Surfaces during Molecular-Beam Epitaxy

G. E. Cirlin, N. V. Sibirev, C. Sartel, and J.-C. Harmand p. 710  abstract

Generation of Superradiation in Quantum Dot Nanoheterostructures

A. V. Savelyev, L. Ya. Karachinsky, I. I. Novikov, N. Yu. Gordeev,
R. P. Seisyan, and G. G. Zegrya p. 714  abstract

Energy Characteristics of Excitons in Structures Based on InGaN Alloys

S. O. Usov, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin,
M. A. Sinitsyn, and N. N. Ledentsov p. 720  abstract

Physics of Semiconductor Devices

Light-Enhanced Sensitivity of SnO_2–x Gas Sensors

A. M. Gulyaev, Le Van Van, O. B. Sarach, and O. B. Mukhina p. 726  abstract

SiO_x Layer Formation during Plasma Sputtering of Si and SiO₂ Targets

A. N. Karpov, D. V. Marin, V. A. Volodin, J. Jedrzejewski, G. A. Kachurin, E. Savir,
N. L. Shwartz, Z. Sh. Yanovitskaya, I. Balberg, and Y. Goldstein p. 731  abstract

Charge-Carrier Concentration and Temperature in Quantum Wells
of Laser Heterostructures under Spontaneous- and Stimulated-Emission Conditions

L. E. Vorob’ev, V. L. Zerova, K. S. Borshchev, Z. N. Sokolova,
I. S. Tarasov, and G. Belenky p. 737  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Electrochemical Etching of Macropores in Silicon with Grooved Etch Seeds

E. V. Astrova and A. A. Nechitalov p. 746  abstract

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