Contents
Semiconductors

Vol. 41, No. 6, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Review

Vacancy Kinetics in Heteropolytype Epitaxy of SiC

S. Yu. Davydov and A. A. Lebedev p. 621  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

Threshold Stresses for Motion of Dislocations in Extrinsic Semiconductors

B. V. Petukhov p. 625  abstract

Electronic and Optical Properties of Semiconductors

Special Features of Annealing of Radiation Defects in Irradiated p-Si Crystals

T. A. Pagava p. 631  abstract

Conductivity and Photoconductivity of Polymeric Composites Containing
Heteropolynuclear Cu(II)/Mn(II) Complex in the Presence of Ionic Polymethine Dyes

N. A. Davidenko, V. N. Kokozay, A. A. Ishchenko, A. A. Beznishchenko, V. G. Makhan’kova,
N. G. Spitsyna, A. S. Lobach, I. I. Davidenko, and A. N. Popenaka p. 634  abstract

Temperature Dependence of the Band Structure
of Wurtzite-Type Semiconductor Compounds: Gallium and Aluminum Nitrides

T. V. Gorkavenko, S. M. Zubkova, and L. N. Rusina p. 641  abstract

Electrical Properties of Undoped High-Resistivity n-CdTe Polycrystals

Yu. V. Klevkov, S. A. Kolosov, and A. F. Plotnikov p. 651  abstract

Ferromagnetism and Anomalous Transport in GaAs Doped
by Implantation of Mn and Mg Ions

V. A. Kul’bacinski, P. V. Gurin, Yu. A. Danilov, E. I. Malysheva,
Y. Horikoshi, and K. Onomitsu p. 655  abstract

Preparation and Optical Properties of the Co-Doped ZnTe Single Crystals

Yu. F. Vaksman, Yu. A. Nitsuk, V. V. Pavlov, Yu. N. Purtov,
A. S. Nasibov, and P. V. Shapkin p. 660  abstract

Photoconductivity of the Pb_0.75Sn_0.25Te:In Alloy in an Alternating Electric Field

A. E. Kozhanov, A. V. Nikorich, L. I. Ryabova, D. R. Khokhlov,
A. V. Dmitriev, and V. Shklover p. 663  abstract

Manifestation of Clustering of Ge Atoms in the Spectra
of Electron Spin Resonance of Si_1–xGe_x Alloys (0 < x < 0.057)

A. I. Veinger, A. G. Zabrodski, T. V. Tisnek, S. I. Goloshchapov, and N. V. Abrosimov p. 666  abstract

Semiconductor Structures, Interfaces, and Surfaces

The Effect of Narrowing of the Band Gap on Surface Recombination in Silicon

A. V. Sachenko and I. O. Sokolovsky p. 673  abstract

Structural and Electrical Properties of the Ge_xSi_1–x/Si Heterojunctions Obtained
by the Method of Direct Bonding

T. S. Argunova, E. I. Belyakova, I. V. Grekhov, A. G. Zabrodski, L. S. Kostina,
L. M. Sorokin, N. M. Shmidt, J. M. Yi, J. W. Jung, J. H. Je, and N. V. Abrosimov p. 679  abstract

Transfer Ratio of Langmuir–Blodgett Films as an Indicator
of the Single-Crystal Silicon Surface Modified by Polyionic Layers

A. M. Yashchenok, D. A. Gorin, K. E. Pankin, M. V. Lomova, S. N. Shtykov,
B. N. Klimov, G. I. Kurochkina, and M. K. Grachev p. 684  abstract

Effect of the Bias Electric Field on the Spectral Distribution of the Photodielectric Effect
in the Schottky-Barrier Structures Based on the Cadmium–Zinc Telluride Crystals

V. K. Komar’, V. M. Puzikov, O. N. Chugai, D. P. Nalivaiko,
S. V. Sulima, and S. L. Abashin p. 689  abstract

On the Electron Affinity of Silicon Carbide Polytypes

S. Yu. Davydov p. 696  abstract

The Effect of Low-Field Injection of Charge Carriers on the Electrical Properties
of the Metal–Oxide–Semiconductor Structures

V. N. Mordkovich, A. D. Mokrushin, and N. M. Omel’yanovskaya p. 699  abstract

Low-Dimensional Systems

Electron–Photon Drag Effect in a Semiconductor Superlattice Subjected
to a High Electric Field

D. V. Zav’yalov, S. V. Kryuchkov, and E. I. Kukhar’ p. 704  abstract

Random Lasing in Vertical ZnO Nanorods

A. N. Gruzintsev, A. N. Red’kin, Z. I. Makove, E. E. Yakimov, and C. Barthou p. 708  abstract

Variations in the Intensity of Lasing in Vertical ZnO Nanorods
with Polarization of Optical Excitation

A. N. Gruzintsev, A. N. Red’kin, Z. I. Makove, E. E. Yakimov,
C. Barthou, and P. Benalloul p. 713  abstract

Physics of Semiconductor Devices

A Discrete Model of the Development and Relaxation of a Local Microbreakdown
in Silicon Avalanche Photodiodes Operating in the Geiger Mode

I. V. Vanyushin, V. A. Gergel’, V. M. Gontar’, V. A. Zimoglyad,
Yu. I. Tishin, V. A. Kholodnov, and I. M. Shcheleva p. 718  abstract

Color Capabilities of ZnS:(CuCl,Ga) Luminophores Depending
on the Sequence of Doping with CuCl and Gallium

Yu. Yu. Bacherikov and N. V. Kitsyuk p. 723  abstract

High-Efficiency Dual-Junction GaInP/GaAs Tandem Solar Cells Obtained
by the Method of MOCVD

V. M. Lantratov, N. A. Kalyuzhny, S. A. Mintairov, N. Kh. Timoshina,
M. Z. Shvarts, and V. M. Andreev p. 727  abstract

The Effect of Damaging Radiation (p, e, ) on Photovoltaic
and Tunneling GaAs and GaSb p–n Junctions

V. M. Andreev, V. V. Evstropov, V. S. Kalinovski, V. M. Lantratov, and V. P. Khvostikov p. 732  abstract

Theory of Stationary Impact-Ionization Plane Waves in Semiconductors

A. S. Kyuregyan p. 737  abstract

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