Contents
Semiconductors

Vol. 39, No. 6, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Kinetics of Defect Formation in ZnO Subjected to a Flux of Oxygen Radicals

M. B. Kotlyarevsky, I. V. Rogozin, and A. V. Marakhovski p. 609  abstract

Specific Features of the Segregation-Related Redistribution of Phosphorus during Thermal Oxidation
of Heavily Doped Silicon Layers

O. V. Aleksandrov and N. N. Afonin p. 615  abstract

Thermodynamic Stability and Redistribution of Charges
in Ternary AlGaN, InGaN, and InAlN Alloys

V. G. Debuk and A. V. Vozny p. 623  abstract

Electronic and Optical Properties of Semiconductors

Determination of the Concentration of Deep Levels in Semi-insulating CdS Single Crystals
by Photoinduced-Current Transient Spectroscopy

A. P. Odrinski p. 629  abstract

Determination of the Charge Carrier Concentration in Lead Selenide Polycrystalline Layers
Using Reflectance Spectra

A. E. Gamarts, Yu. M. Kanageeva, and V. A. Moshnikov p. 636  abstract

Energy Parameters of Two-Electron Tin Centers in PbSe

S. A. Nemov, F. S. Nasredinov, P. P. Seregin, N. P. Seregin, and É. S. Khuzhakulov p. 638  abstract

Dynamic Chaos in a Partially Illuminated Compensated Semiconductor Under the Conditions
of Impurity-Related Breakdown

K. M. Jandieri, Z. S. Kachlishvili, and A. B. Stroganov p. 642  abstract

Modulation of the Characteristics of Intense Picosecond Stimulated Emission from GaAs

N. N. Ageeva, I. L. Bronevo, A. N. Krivonosov, S. E. Kumekov,
T. A. Nalet, and S. V. Stegantsov p. 650  abstract

Recombination Mechanism of the Piezophotoresistive Effect in Compensated Semiconductors

B. M. Pavlyshenko and R. Ya. Shuvar p. 658  abstract

Spontaneous and Stimulated UV Luminescence of ZnO:N at 77 K

A. N. Georgobiani, A. N. Gruzintsev, E. E. Yakimov, C. Barthou, and P. Benalloul p. 661  abstract

Semiconductor Structures, Interfaces, and Surfaces

Increase in the Rate and Discretization of the Kinetics of Isothermal Surface Generation
of Minority Charge Carriers in Metal–Insulator–Semiconductor Structures
with a Planar-Inhomogeneous Insulator

A. G. Zhdan, E. I. Goldman, Yu. V. Gulyaev, and G. V. Chucheva p. 666  abstract

Thermal–Field Forward Current in GaN-Based Surface-Barrier Structures

T. V. Blank, Yu. A. Goldberg, E. E. Zavarin, O. V. Konstantinov, and N. M. Shmidt p. 674  abstract

Low-Dimensional Systems

The Effect of Adsorbed Molecules on the Charge-Carrier Spectrum in a Semiconductor Nanowire

V. A. Lykakh and E. S. Syrkin p. 679  abstract

Local Tunneling Spectroscopy of Silicon Nanostructures

N. T. Bagraev, A. D. Bouravlev, L. E. Klyachkin, A. M. Malyarenko,
W. Gehlhoff, Yu. I. Romanov, and S. A. Rykov p. 685  abstract

Room-Temperature Electroreflectance and Reflectance
of a GaAs/AlGaAs Single Quantum Well Structure

A. A. Herasimovich, S. V. Shokhovets, G. Gobsch, and D. S. Domanevski p. 697  abstract

The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers
on a GaAs Substrate and Emitting at 1.3–1.55 m

N. V. Kryzhanovskaya, A. Yu. Egorov, V. V. Mamutin, N. K. Polyakov, A. F. Tsatsul’nikov,
A. R. Kovsh, N. N. Ledentsov, V. M. Ustinov, and D. Bimberg p. 703  abstract

Amorphous, Vitreous, and Porous Semiconductors

Structural Defects and Electrical Conductivity in Nanocrystalline SiC:H Films Doped
with Boron and Grown by Photostimulated Chemical-Vapor Deposition

O. I. Shevaleevskiy, S. Y. Myong, K. S. Lim, S. Miyajima, and M. Konagai p. 709  abstract

Physics of Semiconductor Devices

The Physical Properties of CdTe Doped with V and Ge

S. Yu. Paranchych, L. D. Paranchych, V. N. Makogonenko,
Yu. V. Tanasyuk, M. D. Andrichuk, and V. R. Romanyuk p. 712  abstract

A New Memory Element Based on Silicon Nanoclusters
in a ZrO₂ Insulator with a High Permittivity for Electrically Erasable Read-Only Memory

V. A. Gritsenko, K. A. Nasyrov, D. V. Gritsenko, Yu. N. Novikov, A. L. Aseev,
J. H. Lee, J.-W. Lee, and C. W. Kim p. 716  abstract

Special Features of Charge Transport in Schottky Diodes Based on Semi-insulating CdTe

L. A. Kosyachenko, O. L. Maslyanchuk, and V. M. Sklyarchuk p. 722  abstract

A 4H-SiC p–i–n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD

E. V. Bogdanova, A. A. Volkova, A. E. Cherenkov, A. A. Lebedev, R. D. Kakanakov,
L. P. Kolaklieva, G. A. Sarov, T. M. Cholakova, A. V. Kirillov, and L. P. Romanov p. 730  abstract

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