Contents
Semiconductors

Vol. 37, No. 6, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Effect of Highly Nonequilibrium Conditions on the Stoichiometry of Cadmium Telluride Layer Obtained
by Vapor-Phase Condensation

A. P. Belyaev, V. P. Rubets, M. Yu. Nuzhdin, and I. P. Kalinkin p. 617  abstract

Hydrogen-Induced Splitting in Silicon over a Buried Layer Heavily Doped with Boron

D. V. Kilanov, V. P. Popov, L. N. Safronov, A. I. Nikiforov, and R. Sholz p. 620  abstract

A Model of Reduction of Oxidation-Enhanced Diffusion in Heavily Doped Si Layers

O. V. Aleksandrov and N. N. Afonin p. 625  abstract

Defect Profiling in Semiconductor Layers by the Electrochemical Method

Á. Nemcsics and J. P. Makai p. 632  abstract

Electronic and Optical Properties of Semiconductors

X-ray Photoelectron Spectroscopy and X-ray Electron-Microprobe Analysis of Single Crystals Based
on Bismuth Telluride

I. V. Gasenkova, V. A. Chubarenko^†, E. A. Tyavlovskaya, and T. E. Svechnikova p. 636  abstract

Photovoltaic Effects in CdV₂S₄ Single Crystals and Structures Based on Them

A. A. Vapolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud’, Yu. V. Rud’,
E. I. Terukov, and N. Fernelius p. 641  abstract

Electrical Properties of Cadmium Telluride Films Synthesized in a Thermal Field
with a Temperature Gradient

A. P. Belyaev, V. P. Rubets, and M. Yu. Nuzhdin p. 646  abstract

Semiconductors Structures, Interfaces, and Surfaces

The Effects of Monovacancies on the Terrace Width during Sublimation from the (111) Surface
of a Diamond-Like Crystal

A. V. Zverev, I. G. Neizvestny, N. L. Shvartz, and Z. Sh. Yanovitskaja p. 649  abstract

Fabrication and Properties of ZnFe₂S₄ Single Crystals and Structures Based on Them

A. A. Vapolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud’, Yu. V. Rud’,
E. I. Terukov, and N. Fernelius p. 656  abstract

Determination of the Absolute Value of the Semiconductor Surface Potential
by the Quasi-Static Capacitance–Voltage Characteristics of an MIS Structure

A. G. Zhdan, N. F. Kukharskaya, and G. V. Chucheva p. 661  abstract

Atomic-Force-Microscopy Visualization of GeSi Buried Nanoislands on Crystal Cleavages
in Silicon Structures

M. S. Dunaevski, Z. F. Krasil’nik, D. N. Lobanov, A. V. Novikov, A. N. Titkov, and R. Laiho p. 667  abstract

Low-Dimensional Systems

Determination of the Parameters of Multilayer Nanostructures Using Two-Wave X-ray Reflectometry

N. L. Popov, Yu. A. Uspenski, A. G. Turyanski, I. V. Pirshin, A. V. Vinogradov, and Yu. Ya. Platonov p. 675  abstract

Superradiance in Quantum Heterostructures

A. I. Klimovskaya, Yu. A. Driga, E. G. Gule, and O. O. Pikaruk p. 681  abstract

Electron Transport in Coupled Quantum Wells with Double-Sided Doping

G. B. Galiev, V. E. Kaminski, V. G. Mokerov, V. A. Kul’bachinski, R. A. Lunin,
I. S. Vasil’evski, and A. V. Derkach p. 686  abstract

Zero Bias Anomalies of Transport Characteristics of Single-Barrier GaAs/AlAs/GaAs Heterostructures
as a Result of Resonance Tunneling between Parallel Two-Dimensional Electron Gases and Suppression
of Resonance Tunneling in a Magnetic Field as a Manifestation of the Coulomb Gap
in the Tunnel Density of States

Yu. N. Khanin, Yu. V. Dubrovski, and E. E. Vdovin p. 692  abstract

Low-Temperature Anti-Stokes Photoluminescence in CdSe/ZnSe Nanostructures

M. Ya. Valakh, N. V. Vuchik, V. V. Strelchuk, S. V. Sorokin, T. V. Shubina,
S. V. Ivanov, and P. S. Kop’ev p. 699  abstract

Nonohmic Conductivity under Transition From Weak to Strong Localization
in GaAs/InGaAs Structures with a Two-Dimensional Electron Gas

A. A. Sherstobitov, G. M. Minkov, O. É. Rut, A. V. Germanenko, B. N. Zvonkov,
E. A. Uskova, and A. A. Biryukov p. 705  abstract

On the Temperature Dependence of the dc Conductivity
of a Semiconductor Quantum Wire in an Insulator

N. A. Poklonski, E. F. Kislyakov, and S. A. Vyrko p. 710  abstract

The Effect of Implantation of P Ions on the Photoluminescence of Si Nanocrystals in SiO₂ Layers

G. A. Kachurin, S. G. Yanovskaya, D. I. Tetelbaum, and A. N. Mikhalov p. 713  abstract

Interband Absorption of Light in Semiconductor Nanostructures

S. I. Pokutnyi p. 718  abstract

Amorphous, Vitreous, and Porous Semiconductors

Modification of the Nanostructure of Diamond-Like Carbon Films by Bombardment with Xenon Ions

I. A. Faizrakhmanov, V. V. Bazarov, A. L. Stepanov, and I. B. Khaibullin p. 723  abstract

Effect of Illumination on the Rate of Relaxation of Light-Induced Metastable States in a-Si:H(B)

I. A. Kurova, N. N. Ormont, and A. L. Gromadin p. 727  abstract

Physics of Semiconductor Devices

Efficient Silicon Light-Emitting Diode with Temperature-Stable Spectral Characteristics

A. M. Emel’yanov, N. A. Sobolev, T. M. Mel’nikova, and S. Pizzini p. 730  abstract

Mid-Infrared ( = 2.775 m) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid
Double Heterostructure Grown by Molecular-Beam Epitaxy

S. V. Ivanov, K. D. Moiseev, V. A. Kagorodov, V. A. Solov’ev, S. V. Sorokin, B. Ya. Meltser,
E. A. Grebenshchikova, I. V. Sedova, Ya. V. Terent’ev, A. N. Semenov, A. P. Astakhova,
M. P. Mikhalova, A. A. Toropov, Yu. P. Yakovlev, P. S. Kop’ev, and Zh. I. Alferov p. 736  abstract

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