Contents
Semiconductors
Vol. 37, No. 6, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Effect of Highly Nonequilibrium Conditions on the Stoichiometry of Cadmium Telluride Layer Obtained
by Vapor-Phase Condensation
A. P. Belyaev, V. P. Rubets, M. Yu. Nuzhdin, and I. P. Kalinkin p. 617 abstract
Hydrogen-Induced Splitting in Silicon over a Buried Layer Heavily Doped with Boron
D. V. Kilanov, V. P. Popov, L. N. Safronov, A. I. Nikiforov, and R. Sholz p. 620 abstract
A Model of Reduction of Oxidation-Enhanced Diffusion in Heavily Doped Si Layers
O. V. Aleksandrov and N. N. Afonin p. 625 abstract
Defect Profiling in Semiconductor Layers by the Electrochemical Method
Á. Nemcsics and J. P. Makai p. 632 abstract
Electronic and Optical Properties of Semiconductors
X-ray Photoelectron Spectroscopy and X-ray Electron-Microprobe Analysis of Single Crystals Based
on Bismuth Telluride
I. V. Gasenkova, V. A. Chubarenko, E. A. Tyavlovskaya, and T. E. Svechnikova p. 636 abstract
Photovoltaic Effects in CdV2S4 Single Crystals and Structures Based on Them
A. A. Vapolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud, Yu. V. Rud,
E. I. Terukov, and N. Fernelius p. 641 abstract
Electrical Properties of Cadmium Telluride Films Synthesized in a Thermal Field
with a Temperature Gradient
A. P. Belyaev, V. P. Rubets, and M. Yu. Nuzhdin p. 646 abstract
Semiconductors Structures, Interfaces, and Surfaces
The Effects of Monovacancies on the Terrace Width during Sublimation from the (111) Surface
of a Diamond-Like Crystal
A. V. Zverev, I. G. Neizvestny, N. L. Shvartz, and Z. Sh. Yanovitskaja p. 649 abstract
Fabrication and Properties of ZnFe2S4 Single Crystals and Structures Based on Them
A. A. Vapolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud, Yu. V. Rud,
E. I. Terukov, and N. Fernelius p. 656 abstract
Determination of the Absolute Value of the Semiconductor Surface Potential
by the Quasi-Static CapacitanceVoltage Characteristics of an MIS Structure
A. G. Zhdan, N. F. Kukharskaya, and G. V. Chucheva p. 661 abstract
Atomic-Force-Microscopy Visualization of GeSi Buried Nanoislands on Crystal Cleavages
in Silicon Structures
M. S. Dunaevski, Z. F. Krasilnik, D. N. Lobanov, A. V. Novikov, A. N. Titkov, and R. Laiho p. 667 abstract
Low-Dimensional Systems
Determination of the Parameters of Multilayer Nanostructures Using Two-Wave X-ray Reflectometry
N. L. Popov, Yu. A. Uspenski, A. G. Turyanski
, I. V. Pirshin, A. V. Vinogradov, and Yu. Ya. Platonov p. 675 abstract
Superradiance in Quantum Heterostructures
A. I. Klimovskaya, Yu. A. Driga, E. G. Gule, and O. O. Pikaruk p. 681 abstract
Electron Transport in Coupled Quantum Wells with Double-Sided Doping
G. B. Galiev, V. E. Kaminski, V. G. Mokerov, V. A. Kulbachinski
, R. A. Lunin,
I. S. Vasilevski, and A. V. Derkach p. 686 abstract
Zero Bias Anomalies of Transport Characteristics of Single-Barrier GaAs/AlAs/GaAs Heterostructures
as a Result of Resonance Tunneling between Parallel Two-Dimensional Electron Gases and Suppression
of Resonance Tunneling in a Magnetic Field as a Manifestation of the Coulomb Gap
in the Tunnel Density of States
Yu. N. Khanin, Yu. V. Dubrovski, and E. E. Vdovin p. 692 abstract
Low-Temperature Anti-Stokes Photoluminescence in CdSe/ZnSe Nanostructures
M. Ya. Valakh, N. V. Vuchik, V. V. Strelchuk, S. V. Sorokin, T. V. Shubina,
S. V. Ivanov, and P. S. Kopev p. 699 abstract
Nonohmic Conductivity under Transition From Weak to Strong Localization
in GaAs/InGaAs Structures with a Two-Dimensional Electron Gas
A. A. Sherstobitov, G. M. Minkov, O. É. Rut, A. V. Germanenko, B. N. Zvonkov,
E. A. Uskova, and A. A. Biryukov p. 705 abstract
On the Temperature Dependence of the dc Conductivity
of a Semiconductor Quantum Wire in an Insulator
N. A. Poklonski, E. F. Kislyakov, and S. A. Vyrko p. 710 abstract
The Effect of Implantation of P Ions on the Photoluminescence of Si Nanocrystals in SiO2 Layers
G. A. Kachurin, S. G. Yanovskaya, D. I. Tetelbaum, and A. N. Mikhalov p. 713 abstract
Interband Absorption of Light in Semiconductor Nanostructures
S. I. Pokutnyi p. 718 abstract
Amorphous, Vitreous, and Porous Semiconductors
Modification of the Nanostructure of Diamond-Like Carbon Films by Bombardment with Xenon Ions
I. A. Faizrakhmanov, V. V. Bazarov, A. L. Stepanov, and I. B. Khaibullin p. 723 abstract
Effect of Illumination on the Rate of Relaxation of Light-Induced Metastable States in a-Si:H(B)
I. A. Kurova, N. N. Ormont, and A. L. Gromadin p. 727 abstract
Physics of Semiconductor Devices
Efficient Silicon Light-Emitting Diode with Temperature-Stable Spectral Characteristics
A. M. Emelyanov, N. A. Sobolev, T. M. Melnikova, and S. Pizzini p. 730 abstract
Mid-Infrared ( = 2.775
m) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid
Double Heterostructure Grown by Molecular-Beam Epitaxy
S. V. Ivanov, K. D. Moiseev, V. A. Kagorodov, V. A. Solovev, S. V. Sorokin, B. Ya. Meltser,
E. A. Grebenshchikova, I. V. Sedova, Ya. V. Terentev, A. N. Semenov, A. P. Astakhova,
M. P. Mikhalova, A. A. Toropov, Yu. P. Yakovlev, P. S. Kopev, and Zh. I. Alferov p. 736 abstract
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