Contents
Semiconductors

Vol. 36, No. 6, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Formation of Selenium-Containing Complexes in Silicon

A. A. Taskin and E. G. Tishkovski p. 605  abstract

Growth of Diamond Films on Crystalline Silicon
by Hot-Filament Chemical Vapor Deposition

M. V. Badakova, A. Ya. Vul’, V. G. Golubev, S. A. Grudinkin,
V. G. Melekhin, N. A. Feoktistov, and A. Krüger p. 615  abstract

Electronic and Optical Properties of Semiconductors

Local Vibrational Modes of the Oxygen–Vacancy Complex in Germanium

V. V. Litvinov, L. I. Murin, J. L. Lindstrom, V. P. Markevich, and A. N. Petukh p. 621  abstract

Luminescent Si–Ge Solid Solution Layers Er-Doped in Molecular-Beam Epitaxy

V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, B. A. Andreev,
Z. F. Krasil’nik, B. Ya. Ber, Yu. N. Drozdov, and A. N. Yablonsky p. 625  abstract

Migration of Laser-Induced Point Defects in IV–VI Compounds

S. V. Plyatsko p. 629  abstract

Physical Properties of Semi-Insulating CdTe:Cl Single Crystals Grown
from the Vapor Phase

V. D. Popovich, G. M. Grigorovich, P. M. Peleshchak, and P. N. Tkachuk p. 636  abstract

Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells

A. V. Andrianov, V. Yu. Nekrasov, N. M. Shmidt, E. E. Zavarin,
A. S. Usikov, N. N. Zinov’ev, and M. N. Tkachuk p. 641  abstract

Semiconductor Structures, Interfaces, and Surfaces

Silicon Nanocrystal Formation upon Annealing of SiO₂ Layers Implanted with Si Ions

G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, V. G. Kesler,
A. F. Leier, and M.-O. Ruault p. 647  abstract

Role of Silicon Vacancies in Formation of Schottky Barriers at Ag
and Au Contacts to 3C- and 6H-SiC

S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov p. 652  abstract

Measurements of Deep Trap Concentration in Diodes with a High Schottky Barrier
by Deep-Level Transient Spectroscopy

E. N. Agafonov, A. N. Georgobiani, and L. S. Lepnev p. 655  abstract

Simulation of the Energy Spectrum of Surface States
in an MIS Structure Taking Current Leakage
through the Insulator into Account

L. S. Berman p. 659  abstract

Low-Dimensional Systems

Mixed Vibrational Modes of PbTe Nanocrystallites

A. I. Belogorokhov, L. I. Belogorokhova, D. R. Khokhlov, and S. V. Lemeshko p. 663  abstract

Electron States in (AlAs)_M(Al_xGa_1–xAs)_N Superlattices

G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov p. 670  abstract

Electron Mobility in AlGaAs/GaAs/AlGaAs Quantum Well

V. G. Mokerov, G. B. Galiev, J. Pozela, K. Pozela, and V. Juciene p. 674  abstract

Resonance Transfer of Charge Carriers in Si/CaF₂ Periodic Nanostructures
via Trap States in Insulator Layers

Yu. A. Berashevich, A. L. Danilyuk, and V. E. Borisenko p. 679  abstract

Inversion of the Electron Population in Subbands of Dimensional Quantization
with Longitudinal Transport in Tunnel-Coupled Quantum Wells

V. Ya. Aleshkin and A. A. Dubinov p. 685  abstract

Amorphous, Vitreous, and Porous Semiconductors

Photoconductivity of Nanostructured Hydrogenated Silicon Films

O. A. Golikova p. 691  abstract

Vibratonal Spectroscopy of a-C:H(Co)

T. K. Zvonareva, E. I. Ivanova, G. S. Frolova,
V. M. Lebedev, and V. I. Ivanov-Omski p. 695  abstract

Physics of Semiconductor Devices

Spontaneous and Stimulated Emission from Magnetron-Deposited
ZnO–SiO₂–Si Thin-Film Nanocavities

A. N. Gruzintsev, V. T. Volkov, C. Barthou, and P. Benalloul p. 701  abstract

Photoelectric Properties of p⁺–n Junctions Based on 4H-SiC Ion-Implanted
with Aluminum

G. N. Violina, E. V. Kalinina, G. F. Kholujanov, G. A. Onushkin,
V. G. Kossov, R. R. Yafaev, A. Hallén, and A. O. Konstantinov p. 706  abstract

Silicon Carbide Detectors of High-Energy Particles

G. N. Violina, E. V. Kalinina, G. F. Kholujanov, V. G. Kossov,
R. R. Yafaev, A. Hallén, and A. O. Konstantinov p. 710  abstract

Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation
Measurements at 1.55 m

N. Yu. Gordeev, L. Ya. Karachinsky, I. I. Novikov, A. V. Lyutetsky,
N. A. Pikhtin, N. V. Fetisova, I. S. Tarasov, and P. S. Kop’ev p. 714  abstract

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