Contents

Semiconductors

---

Vol. 60, No. 6, 2026

---

Performance Analysis of AlGaN/GaN HEMTs with InGaN and Graded InGaN Back-Barrier Structures

Bathlin Nelmin N, R. S. Shaji, E. Rajasherin, and M. Maria Dominic Savio p. 579  abstract

Crystalline Solar Cells and the Impact of Different Passivation Layers on Their Performance Parameters: A Review

Rajesh Kumar Jha p. 592  abstract

Ultra-compact and Ultra-broadband Mode Exchangers for Transverse Magnetic Modes using Subwavelength Grating Structures

Md. Forhad Mojumder, Maruful Islam, Mohammad Jahed, Md. Shah Alam, Mohammad Abdul Alim, and Kazi Tanvir Ahmmed p. 610  abstract

Temperature-Dependent DC Characteristics of GaN/InAlN/GaN HEMTs: GaN Cap Layer Thickness and Doping Effects

Aissa Bellakhdar, Fathi Bendelala, and Ali Cheknane p. 622  abstract

Hydrogen Dilution in PECVD Growth of a-SiN_x:H Films: Influence on Cr- and Al-gated nc-Si:H TFTs

Tamila Anutgan and Mustafa Anutgan p. 633  abstract

Magnetron Sputtering Technique Grown Silicon Nanowires: Impact of Growth Time

Hala Nazar Mohammed, Hisham Anwar Saleh, and Yasir Hussein Mohammed p. 642  abstract

Optimization of Plasmon-Enhanced Multilayer Antireflection Coatings for Broadband Light Trapping in Crystalline Silicon Solar Cells

Songryong Pak, Iljin Pak, Unchol Kim, Sehyok Kim, and Yongil Ri p. 654  abstract

Investigation of Specific Heat Capacity and Dielectric Properties of Er-doped ms-BVO for Pyroelectric Energy Harvesting

K. Swethaa, M. Rajeswari, and L. Balakrishnan p. 663  abstract

Graphene Nanoribbon-Based InSb/SiC TFETs with Nanogap-Enabled Tri-Metal Gate for Label-Free Biosensing Applications

N. M. Mary Sindhuja, R. Prem Ananth, T. Puvirajan, and P. Parthasarathy p. 677  abstract

Self-Heating and Channel Geometry Effects in Vertically Stacked CFETs: a TCAD-based Analysis

R. Jeyarohini, K. R. Aravind Britto, N. B. Balamurugan, and M. P. Ramkumar p. 691  abstract

---