Vol. 54, No. 6, 2020

Semiconductors

Electronic Properties of Semiconductors

Impedance Characteristics of γ-Irradiated (TlGaSe₂)_{1 –} _x(TlInS₂)_x Solid Solutions

R. M. Sardarly, F. T. Salmanov, N. A. Aliyeva and R. M. Abbasli p. 615 abstract

Charge-Transfer Features in Zinc Sulfide Doped Layers in a Low-Frequency Alternating Electric Field

V. T. Avanesyan, A. B. Zharkoy and A. V. Rakina p. 623 abstract

AC Electrical Conductivity of FeGaInSe₄

N. N. Niftiyev, F. M. Mammadov and M. B. Muradov p. 627 abstract

Surfaces, Interfaces, and Thin Films

Optical Properties and Critical Points of PbSe Nanostructured Thin Films

M. N. Huseynaliyev, S. N. Yasinova, D. N. Jalilli and S. I. Mekhtiyeva p. 630 abstract

Influence of Ni-Doping in ZnO Thin Films Coated on Porous Silicon Substrates and ZnO|PS Based Hetero-Junction Diodes

V. L. Priya and N. Prithivikumaran p. 634 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Electronic Properties of Silicene Films Subjected to Neutron Transmutation Doping

A. E. Galashev and A. S. Vorob’ev p. 641 abstract

MBE-Grown In_xGa_{1 –} _xAs Nanowires with 50% Composition

V. G. Dubrovskii, R. R. Reznik, N. V. Kryzhanovskaya, I. V. Shtrom, E. D. Ubyivovk, I. P. Soshnikov and G. E. Cirlin p. 650 abstract

Amorphous, Vitreous, and Organic Semiconductors

Formation of a Two-Phase Structure in CH₃NH₃PbI₃ Organometallic Perovskite

D. V. Amasev, V. G. Mikhalevich, A. R. Tameev, Sh. R. Saitov and A. G. Kazanskii p. 654 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Influence of Hydrogen on the Impedance of Pd/Oxide/InP Structures

V. A. Shutaev, E. A. Grebenshchikova, V. G. Sidorov, M. E. Kompan and Yu. P. Yakovlev p. 658 abstract

Carbon Systems

Atomic Carbon Transport between the Rh Surface and Bulk in Graphene Formation and Destruction

E. V. Rut’kov, E. Yu. Afanas’eva and N. R. Gall p. 662 abstract

Physics of Semiconductor Devices

Correcting the Characteristics of Silicon Photodiodes by Ion Implantation

V. E. Asadchikov, I. G. Dyachkova, D. A. Zolotov, F. N. Chukhovskii and E. V. Nikitina p. 666 abstract

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

L. K. Markov, I. P. Smirnova, M. V. Kukushkin and A. S. Pavluchenko p. 672 abstract

Ultimate Lasing Temperature of Microdisk Lasers

A. E. Zhukov, N. V. Kryzhanovskaya, E. I. Moiseev, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy and M. V. Maximov p. 677 abstract

Solar-Blind UV Detectors Based on β-Ga₂O₃ Films

V. M. Kalygina, A. V. Almaev, V. A. Novikov and Yu. S. Petrova p. 682 abstract

Silicon Light-Emitting Diodes with Luminescence from (113) Defects

A. E. Kalyadin, K. F. Shtel’makh, P. N. Aruev, V. V. Zabrodskii, K. V. Karabeshkin, E. I. Shek and N. A. Sobolev p. 687 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Impact of Carrier Gas on the GaN Layers Properties Grown on (001) and (11n) GaAs Substrates by AP-MOVPE: Comparative Study

J. Laifi and A. Bchetnia p. 691 abstract

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