Contents
Semiconductors

Vol. 35, No. 6, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

II International Conference on Amorphous and Microcrystalline Semiconductors

II International Conference on Amorphous and Microcrystalline Semiconductors p. 613

The Relation between Recombination at Interface States and the Anomalously
Small Exponent of the Current–Illuminance Characteristic in Microcrystalline Silicon

K. V. Koughia and E. I. Terukov p. 615  abstract

Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures

V. S. Lysenko, I. P. Tyagulski, I. N. Osiyuk, A. N. Nazarov, Ya. N. Vovk, Yu. V. Gomenyuk,
E. I. Terukov, and O. I. Kon’kov p. 621  abstract

EXAFS Studies of the Local Atomic Structure of Nanocrystalline GaAs

R. G. Valeev, A. N. Deev, Yu. V. Rutz, Yu. A. Babanov, P. N. Krylov,
V. F. Kobziev, and S. F. Lomaeva p. 627  abstract

Physical Properties of Si₂₀Te₈₀ Glasses with Various Structures and Their Use
in Acoustooptic Devices

L. A. Kulakova, B. T. Melekh, E. Z. Yakhkind, N. F. Kartenko,
V. I. Bakharev, and Yu. P. Yakovlev p. 630  abstract

Levels of Structural Modification of Noncrystalline Semiconductors
and Limits of Their Applicability

A. I. Popov, V. A. Vorontsov, and I. A. Popov p. 637  abstract

The Effect of Some Organic Addenda on the HOMO–LUMO Gap
in C₆₀ Fullerene

D. A. Sykmanov, Yu. F. Biryulin, L. V. Vinogradova, and V. N. Zgonnik p. 643  abstract

Cooperative Generation of Coherent Phonons by Localized Excitations
in Glasses

A. M. Andriesh, N. A. Yenaki, V. I. Korol, P. I. Bardetski, and I. P. Kulyak p. 648  abstract

Influence of a-Si:H Band Tails on the Occupation of Dangling-Bond States
and on Photoconductivity

S. V. Kuznetsov and E. I. Terukov p. 656  abstract

The Meissner Effect in Copper-Containing Fullerides

A. V. Prikhod’ko and O. I. Kon’kov p. 659  abstract

X-ray Studies of Nanoporous Carbon Powders Produced from Silicon Carbide

E. A. Smorgonskaya, R. N. Kyutt, A. V. Shchukarev, S. K. Gordeev, and A. V. Grechinskaya p. 661  abstract

Effective Control over the Photoelectric Properties of Triphenylamine-containing Polyimides

L. P. Kazakova, E. L. Aleksandrova, and A. V. Chernyshev p. 666  abstract

Low-Temperature Plasma-Enhanced Chemical Vapor Deposition
of Carbon Films and Their Emission Properties

A. Ya. Vinogradov, A. N. Andronov, A. I. Kosarev, and A. S. Abramov p. 669  abstract

Current Instability in a-Si:H Solar Cells after Their Exposure to Light

E. N. Voronkov p. 674  abstract

High-Temperature Superconductivity in Chalcogenide Vitreous Semiconductors

A. V. Prikhod’ko, K. D. Tséndin, and B. P. Popov p. 677  abstract

Photonic Crystals with Tunable Band Gap Based on Filled
and Inverted Opal–Silicon Composites

V. G. Golubev, V. A. Kosobukin, D. A. Kurdyukov, A. V. Medvedev, and A. B. Pevtsov p. 680  abstract

Self-Organization Processes and Optical Activation of the Er³⁺ Ions
in Amorphous Hydrogenated Er-Doped Silicon Films

M. M. Mezdrogina, G. N. Mosina, E. I. Terukov, and I. N. Trapeznikova p. 684  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

Polycrystalline Films of Gallium Nitride Grown by Magnetron Sputtering

A. N. Blaut-Blachev p. 688  abstract

Electronic and Optical Properties of Semiconductors

An Analysis of the Temperature Dependence of the Electron Mobility
in the CdGeAs₂ Single Crystals

S. I. Borisenko, V. Yu. Rud’, Yu. V. Rud’, and V. G. Tyuterev p. 690  abstract

Fine Structure of the Edge Ultraviolet Luminescence of GaN:Mg Films Activated
in a Nitrogen Plasma and the Electroluminescence of a ZnO–GaN:Mg Heterostructure
Based on These Films

A. N. Georgobiani, A. N. Gruzintsev, M. O. Vorob’ev, U. Kaiser, W. Richter, and I. I. Khodos p. 695  abstract

Bi Impurity in PbSe

S. A. Nemov and P. A. Osipov p. 700  abstract

Temperature Dependence of Plasma-Reflection Spectra of Bismuth–Antimony Crystals

V. M. Grabov and N. P. Stepanov p. 703  abstract

Changes in the Optical-Absorption Spectra of Transmutation-Doped GaAs as a Result of Annealing

V. N. Brudny, N. G. Kolin, D. I. Merkurisov, and V. A. Novikov p. 708  abstract

Semiconductor Structures, Interfaces, and Surfaces

CdTe Polycrystalline Surface Subjected to Pulsed Laser Irradiation

A. Badullaeva, A. I. Vlasenko, P. E. Mozol’, and A. B. Smirnov p. 714  abstract

A Noncontact Electron-Probe Method for Measuring the Diffusion Length
and the Lifetime of Minority Charge Carriers in Semiconductors

E. I. Rau and Shiqiu Zhu p. 718  abstract

Low-Dimensional Systems

Manifestations of Quantum Confinement in Semiconductor Structures with Wide Doped Wells

A. A. Sherstobitov and G. M. Min’kov p. 723  abstract

Momentum Alignment and Spin Orientation of Photoexcited Electrons in GaAs
in the Transition from Two- to Three-Dimensional Structures

I. A. Akimov, D. N. Mirlin, V. I. Perel’, and V. F. Sapega p. 727  abstract

Personalia

Vadim Valentinovich Emtsev (Dedicated to His 60th Birthday) p. 734

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