Vol. 53, No. 6, 2019

Semiconductors

XVI International Conference “Thermoelectrics and Their Applications–2018” (ISCTA 2018), St. Petersburg, October 8–12, 2018

Effect of Sample-Shape Imperfection on Uncertainty in Measurements of the Thermal-Conductivity by the Laser-Flash Method

A. V. Asach, G. N. Isachenko, A. V. Novotelnova, V. E. Fomin, K. L. Samusevich and I. L. Tkhorgevskii p. 723 abstract

Specific Features of the Quantum-Size Effect in Transport Phenomena in Bismuth-Thin Films on Mica Substrates

E. V. Demidov, V. M. Grabov, V. A. Komarov, A. N. Krushelnitckii, A. V. Suslov and M. V. Suslov p. 727 abstract

On the Power Factor of Bismuth-Telluride-Based Alloys near Topological Phase Transitions at High Pressures

I. V. Korobeinikov, N. V. Morozova, L. N. Lukyanova, O. A. Usov and S. V. Ovsyannikov p. 732 abstract

Galvanomagnetic Properties of Cobalt Monosilicide and Alloys Based on It

A. Yu. Ovchinnikov, P. P. Konstantinov, D. A. Pshenay-Severin and A. T. Burkov p. 737 abstract

Thermoelectric Properties of Nanocomposite Bi_0.45Sb_1.55Te_2.985 Solid Solution with SiO₂ Microparticles

A. A. Shabaldin, P. P. Konstantinov, D. A. Kurdyukov, L. N. Lukyanova, A. Yu. Samunin, E. Yu. Stovpiaga and A. T. Burkov p. 742 abstract

Bismuth-Telluride-Based Radiation Thermopiles Prepared by Pulsed Laser Deposition

A. E. Shupenev, I. S. Korshunov, A. S. Iliin, A. S. Osipkov and A. G. Grigoryants p. 747 abstract

Cryogenic Thermoelectric Cooler for Operating Temperatures below 90 K

N. A. Sidorenko and Z. M. Dashevsky p. 752 abstract

Thermoelectric and Thermoelectrokinetic Phenomena in Colloidal Solutions

A. V. Sidorov, V. M. Grabov, A. A. Zaitsev and D. V. Kuznetsov p. 756 abstract

On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn

F. Yu. Solomkin, A. S. Orekhov, S. V. Novikov, N. A. Arkharova, G. N. Isachenko, N. V. Zaitseva, N. V. Sharenkova, A. U. Samunin, V. V. Klechkovskaya and A. T. Burkov p. 761 abstract

Correlation of the Optical and Magnetic Properties of Bi₂Te₃–Sb₂Te₃ Crystals

N. P. Stepanov, A. K. Gilfanov and E. N. Trubitsyna p. 765 abstract

Influence of V Doping on the Thermoelectric Properties of Fe₂Ti_{1 –} _xV_xSn Heusler Alloys

A. I. Taranova, A. P. Novitskii, A. I. Voronin, S. V. Taskaev and V. V. Khovaylo p. 768 abstract

Simulation of Thermoelectric Materials Densification during Spark Plasma Sintering with the Example of Ge–Si

A. S. Tukmakova, K. L. Samusevich, A. V. Novotelnova, I. L. Tkhorzhevskiy and E. S. Makarova p. 772 abstract

Structure and Thermoelectric Properties of CoSi-Based Film Composites

V. S. Kuznetsova, S. V. Novikov, C. K. Nichenametla, J. Calvo and M. Wagner-Reetz p. 775 abstract

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Thick α-Ga₂O₃ Layers on Sapphire Substrates Grown by Halide Epitaxy

A. I. Pechnikov, S. I. Stepanov, A. V. Chikiryaka, M. P. Scheglov, M. A. Odnobludov and V. I. Nikolaev p. 780 abstract

Electronic Properties of Semiconductors

Analysis of the Optical Properties of Plastically Deformed ZnS(O) Using Band-Anticrossing Theory

N. K. Morozova, I. N. Miroshnikova and V. G. Galstyan p. 784 abstract

DLTS Investigation of the Energy Spectrum of Si:Mg Crystals

N. Yarykin, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov and J. Weber p. 789 abstract

Surfaces, Interfaces, and Thin Films

Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

S. V. Sitnikov, E. E. Rodyakina and A. V. Latyshev p. 795 abstract

Features of Defect Formation in Nanostructured Silicon under Ion Irradiation

A. V. Kozhemiako, A. P. Evseev, Yu. V. Balakshin and A. A. Shemukhin p. 800 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Specific Features of Carrier Transport in n⁺–n⁰–n⁺ Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov and N. A. Pikhtin p. 806 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Optically Induced Charge Exchange in ZnO-Based Composite Structures with Embedded CsPbBr₃ Nanocrystals

K. A. Drozdov, I. V. Krylov, A. S. Chizhov, M. N. Rumyantseva, L. I. Ryabova and D. R. Khokhlov p. 814 abstract

Urbach Rule in MnGa₂Se₄ Single Crystals Upon Optical Absorption

N. N. Niftiyev p. 819 abstract

Physics of Semiconductor Devices

Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO₂ (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection

V. V. Romanov, I. A. Belykh, E. V. Ivanov, P. A. Alekseev, N. D. Il’inskaya and Yu. P. Yakovlev p. 822 abstract

Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers

A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko and N. A. Pikhtin p. 828 abstract

Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer

A. G. Banshchikov, Yu. Yu. Illarionov, M. I. Vexler, S. Wachter and N. S. Sokolov p. 833 abstract

Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction

A. S. Shashkina and S. D. Hanin p. 838 abstract

Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers

E. V. Kalinina, G. N. Violina, I. P. Nikitina, M. A. Yagovkina, E. V. Ivanova and V. V. Zabrodski p. 844 abstract

Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation

P. A. Ivanov, M. F. Kudoyarov, A. S. Potapov and T. P. Samsonova p. 850 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films

L. N. Maskaeva, E. A. Fedorova, V. F. Markov, M. V. Kuznetsov and O. A. Lipina p. 853 abstract

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