Contents

Semiconductors

Vol. 51, No. 6, 2017

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016

Transport Properties of Cobalt Monosilicide and Its Alloys at Low Temperatures

A. T. Burkov, S. V. Novikov, V. K. Zaitsev and H. Reith p. 689  abstract

On the Density-of-States Effective Mass and Charge-Carrier Mobility in Heteroepitaxial Films of Bismuth Telluride and Bi0.5Sb1.5Te3 Solid Solution

L. N. Lukyanova, Yu. A. Boikov, O. A. Usov and V. A. Danilov p. 692  abstract

Calculation of the Thermal Conductivity of Nanostructured Bi2Te3 with the Real Phonon Spectrum Taken into Account

L. P. Bulat, D. A. Pshenay-Severin, V. B. Osvenskii and Yu. N. Parkhomenko p. 695  abstract

Thermoelectric Properties of InSb〈Zn〉 in Nanoporous Glass

O. N. Uryupin and A. A. Shabaldin p. 699  abstract

Galvanomagnetic Properties of Bi85Sb15 Thin Films on Different Substrates

V. A. Komarov, A. V. Suslov and M. V. Suslov p. 702  abstract

Structure of Thermoelectric Films of Higher Manganese Silicide on Silicon According to Electron Microscopy Data

A. S. Orekhov, T. S. Kamilov, B. V. Ibragimova, G. I. Ivakin and V. V. Klechkovskaya p. 706  abstract

Synthesis and Electrical Properties of Bi2Te3-Based Thermoelectric Materials Doped with Er, Tm, Yb, and Lu

M. N. Yapryntsev, R. A. Lyubushkin, O. N. Soklakova and O. N. Ivanov p. 710  abstract

Preparation and Properties of Zn4Sb3-Based Thermoelectric Material

V. P. Panchenko, N. Yu. Tabachkova, A. A. Ivanov, B. R. Senatulin and E. A. Andreev p. 714  abstract

Fe-Based Semiconducting Heusler Alloys

V. V. Khovaylo, A. I. Voronin, V. Yu. Zueva, M. A. Seredina and R. Chatterdjee p. 718  abstract

Simulation of the Field-Activated Sintering of Thermoelectric Materials

L. P. Bulat, A. V. Novotelnova, V. B. Osvenskii, A. S. Tukmakova and D. Yerezhep p. 722  abstract

Effect of Anion and Cation Substitution in Tungsten Disulfide and Tungsten Diselenide on Conductivity and Thermoelectric Power

G. E. Yakovleva, A. I. Romanenko, A. S. Berdinsky, V. A. Kuznetsov, A. Yu. Ledneva, S. B. Artemkina and V. E. Fedorov p. 725  abstract

On the Morphology of the Interlayer Surface and Micro-Raman Spectra of Layered Films in Topological Insulators Based on Bismuth Telluride

L. N. Lukyanova, A. Yu. Bibik, V. A. Aseev, O. A. Usov, I. V. Makarenko, V. N. Petrov and N. V. Nikonorov p. 729  abstract

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Polymorphic Transformations and Thermal Expansion in AgCuSe0.5(S,Te)0.5 Crystals

Y. I. Aliyev, Y. G. Asadov, R. D. Aliyeva and S. H. Jabarov p. 732  abstract

On a Neutron Detector Based on TlInSe2 Crystals Intercalated with a Lithium Isotope

I. V. Alekseev, E. A. Goremychkin, N. A. Gundorin, A. V. Petrenko and I. L. Sashin p. 740  abstract

Study of the Distribution Profile of Iron Ions Implanted into Silicon

A. V. Kozhemyako, Yu. V. Balakshin, A. A. Shemukhin and V. S. Chernysh p. 745  abstract

Electronic Properties of Semiconductors

Electrical Properties of ZnSe Crystals Doped with Transition Elements

Yu. A. Nitsuk and Yu. F. Vaksman p. 751  abstract

Simulation of Drift-Diffusion Transport of Charge Carriers in Semiconductor Layers with a Fractal Structure in an Alternating Electric Field

S. Sh. Rekhviashvili and A. A. Alikhanov p. 755  abstract

Electron Properties of Surface InGaAs/InAlAs Quantum Wells with Inverted Doping on InP Substrates

G. B. Galiev, A. N. Klochkov, I. S. Vasil’evskii, E. A. Klimov, S. S. Pushkarev, A. N. Vinichenko, R. A. Khabibullin and P. P. Maltsev p. 760  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Classical Magnetoresistance of a Two-Component System Induced by Thermoelectric Effects

P. S. Alekseev, I. V. Gornyi, A. P. Dmitriev, V. Yu. Kachorovskii and M. A. Semina p. 766  abstract

Amorphous, Vitreous, and Organic Semiconductors

Influence of the Samarium Impurity on the Structure and Surface Morphology of Se95Te5 Chalcogenide Glassy Semiconductor

S. I. Mekhtiyeva, S. U. Atayeva, A. I. Isayev and V. Z. Zeynalov p. 777  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Ab Initio Study of the Electronic and Vibrational Structures of Tetragonal Cadmium Diarsenide

Yu. M. Basalaev, A. V. Kopytov, A. S. Poplavnoi and Yu. I. Polygalov p. 783  abstract

Physics of Semiconductor Devices

n-ZnO/p-CuI Barrier Heterostructure Based on Zinc-Oxide Nanoarrays Formed by Pulsed Electrodeposition and SILAR Copper-Iodide Films

N. P. Klochko, V. P. Kopach, G. S. Khrypunov, V. E. Korsun, N. D. Volkova, V. N. Lyubov, M. V. Kirichenko, A. V. Kopach, D. O. Zhadan and A. N. Otchenashko p. 789  abstract

On the Limit of the Injection Ability of Silicon p+–n Junctions as a Result of Fundamental Physical Effects

T. T. Mnatsakanov, M. E. Levinshtein, V. B. Shuman and B. M. Seredin p. 798  abstract

Simulation of Reversely Switched Dynistors in Modes with a Lowered Primary-Ignition Threshold

A. V. Gorbatyuk and B. V. Ivanov p. 803  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Influence of a Static Magnetic Field on the Formation of Silicide Phases in a Cu/Si(100) Structure upon Isothermal Annealing

E. Yu. Buchin, V. V. Naumov and S. V. Vasilyev p. 812  abstract

Effect of Deposition Temperature on the Structure and Optical Properties of Zinc-Selenide Films Produced by Radio-Frequency Magnetron Sputtering

V. F. Kobziev, R. M. Zakirova, N. V. Kostenkov, P. N. Krylov and I. V. Fedotova p. 817  abstract

On the Detachment of Thin ITO Films from Silicon Substrate by Microsecond Laser Irradiation

D. A. Kirienko and O. Ya. Berezina p. 823  abstract

Structural Features of Sm1 – xEuxS Thin Polycrystalline Films

V. V. Kaminskii, S. M. Solov’ev, G. D. Khavrov, N. V. Sharenkova and Shinji Hirai p. 828  abstract