Vol. 50, No. 6, 2016

Semiconductors

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Summary of the 12th Russian Conference on Semiconductor Physics (Ershovo, Zvenigorod, Moscow, September 20–25, 2015)

D. R. Khokhlov p. 705 abstract

Matrix-Type Effect on the Magnetotransport Properties of Ni–AlO and Ni–NbO Composite Systems

O. V. Stognei, A. J. Maliki, A. A. Grebennikov, K. I. Semenenko, E. O. Bulovatskaya and A. V. Sitnikov p. 709 abstract

Optical Properties of In₂Se₃ Thin Films

I. V. Bodnar p. 715 abstract

Anomalous Thermoelectric Power in Hg₃In₂Te₆ Crystals

O. G. Grushka p. 719 abstract

Role of Electrostatic Fluctuations in Doped Semiconductors upon the Transition from Band to Hopping Conduction (by the Example of p-Ge:Ga)

N. A. Poklonski, S. A. Vyrko, O. N. Poklonskaya and A. G. Zabrodskii p. 722 abstract

Specific Features of the Electrophysical Parameters of NTD Si Treated under Different Conditions of Heat Treatment

G. P. Gaidar and P. I. Baranskii p. 735 abstract

On the Tin Impurity in the Thermoelectric Compound ZnSb: Charge-Carrier Generation and Compensation

L. V. Prokofieva, P. P. Konstantinov and A. A. Shabaldin p. 741 abstract

Radiation-Induced Bistable Centers with Deep Levels in Silicon n⁺–p Structures

S. B. Lastovskii, V. P. Markevich, H. S. Yakushevich, L. I. Murin and V. P. Krylov p. 751 abstract

Surfaces, Interfaces, and Thin Films

On the Local Injection of Emitted Electrons into Micrograins on the Surface of A^III–B^V Semiconductors

N. D. Zhukov, E. G. Glukhovskoi and A. A. Khazanov p. 756 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

On the Ohmicity of Schottky Contacts

A. V. Sachenko, A. E. Belyaev and R. V. Konakova p. 761 abstract

Absorption of Electromagnetic Radiation in a Quantum Wire with an Anisotropic Parabolic Potential in a Transverse Magnetic Field

V. V. Karpunin and V. A. Margulis p. 769 abstract

Oxidation Model of Polycrystalline Lead-Chalcogenide Layers in an Iodine-containing Medium

E. V. Maraeva, V. A. Moshnikov, A. A. Petrov and Yu. M. Tairov p. 775 abstract

Features of High-Temperature Electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb Heterostructure with High Potential Barriers

L. V. Danilov, A. A. Petukhov, M. P. Mikhailova, G. G. Zegrya, E. V. Ivanov and Yu. P. Yakovlev p. 778 abstract

Generation of Transverse Direct Current in a Superlattice under a Bichromatic High-Frequency Electric and Constant Magnetic Fields

D. V. Zav’yalov, V. I. Konchenkov and S. V. Kryuchkov p. 785 abstract

Amorphous, Vitreous, and Organic Semiconductors

Growth of Silicon Nanoclusters in Thermal Silicon Dioxide under Annealing in an Atmosphere of Nitrogen

E. V. Ivanova, A. A. Sitnikova, O. V. Aleksandrov and M. V. Zamoryanskaya p. 791 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Inter Atomic Force Constants of Binary and Ternary Tetrahedral Semiconductors

Suresh Pal, R. K. Tiwari, D. C. Gupta, Vibhav K. Saraswat and A. S. Verma p. 795 abstract

Carbon Systems

Substitutional Impurity in Single-Layer Graphene: the Koster–Slater and Anderson Models

S. Yu. Davydov p. 801 abstract

Physics of Semiconductor Devices

Dependence of the Conductivity on the Active-Region Thickness in GaAs Thin-Film Schottky Diodes

S. A. Zuev, G. V. Kilessa, E. E. Asanov, V. V. Starostenko and S. V. Pokrova p. 810 abstract

Experimental Determination of the Derivative of the Current–Voltage Characteristic of a Nonlinear Semiconductor Structure using Modulation Fourier Analysis

N. D. Kuzmichev, M. A. Vasyutin and D. A. Shilkin p. 815 abstract

Narrowing of the Emission Spectra of High-Power Laser Diodes with a Volume Bragg Grating Recorded in Photo-Thermo-Refractive Glass

S. A. Ivanov, N. V. Nikonorov, A. I. Ignat’ev, V. V. Zolotarev, Ya. V. Lubyanskiy, N. A. Pikhtin and I. S. Tarasov p. 819 abstract

Method for Increasing the Carrier Mobility in the Channel of the 4H-SiC MOSFET

A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov and A. Schöner p. 824 abstract

Switching between the Mode-Locking and Q-Switching Modes in Two-Section QW Lasers upon a Change in the Absorber Properties due to the Stark Effect

I. M. Gadzhiyev, M. S. Buyalo, A. E. Gubenko, A. Yu. Egorov, A. A. Usikova, N. D. Il’inskaya, A. V. Lyutetskiy, Yu. M. Zadiranov and E. L. Portnoi p. 828 abstract

Fabrication, Treatment, and Testing of Materials and Structures

On the Photon Annealing of Silicon-Implanted Gallium-Nitride Layers

B. I. Seleznev, G. Ya. Moskalev and D. G. Fedorov p. 832 abstract

The Modification of BaCe_0.5Zr_0.3Y_0.2O_{3 – δ} with Copper Oxide: Effect on the Structural and Transport Properties

Yu. G. Lyagaeva, G. K. Vdovin, I. V. Nikolaenko, D. A. Medvedev and A. K. Demin p. 839 abstract

Synthesis of Metal and Semiconductor Nanoparticles in a Flow of Immiscible Liquids

L. B. Matyushkin, O. A. Ryzhov, O. A. Aleksandrova and V. A. Moshnikov p. 844 abstract

Contents