Contents
Semiconductors

Vol. 47, No. 6, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

On the Resonant Level of Chromium in the Rhombohedral
and Cubic Phases of Pb_1–x–yGe_xCr_yTe Alloys

E. P. Skipetrov, N. A. Pichugin, E. I. Slyn’ko, and V. E. Slyn’ko p. 729  abstract

Energy States of a Cr²⁺ Ion in ZnSe Crystals

Yu. A. Nitsuk p. 736  abstract

Effect of Fluorine, Nitrogen, and Carbon Impurities on the Electronic
and Magnetic Properties of WO₃

I. R. Shein and A. L. Ivanovskii p. 740  abstract

Method for Determination of the Degree of Compensation
for Electrically Active Impurities in Multivalley Semiconductors

P. I. Baranskii and G. P. Gaidar p. 745  abstract

Spectroscopy, Interaction with Radiation

Fundamental Spectra of Optical Functions for Indium Bromide
in the Energy Range of 2–30 eV at 4.2 K

V. V. Sobolev, V. Val. Sobolev, D. V. Anisimov p. 749  abstract

Role of Intervalley Scattering in the Radiative Recombination in Pb_1–xEu_xTe Alloys (0 x 1)

D. A. Pashkeev and I. I. Zasavitskiy p. 755  abstract

Optical Phonons in CdGa₂S_4xSe_4(1–x) Alloys

T. G. Kerimova, N. A. Abdullaev, I. A. Mamedova, Z. I. Badalova,
R. A. Guliev, R. Paucar, K. Wakita, and N. T. Mamedov p. 761  abstract

Surfaces, Interfaces, and Thin Films

On the Photoinduced Effect in Undoped a-Si:H Films

I. A. Kurova and N. N. Ormont p. 767  abstract

Electrical Properties of Silicon Schottky Diodes Containing Metal Films
of Various Compositions

I. G. Pashaev p. 771  abstract

Effect of the Stoichiometric Composition of the Si(111) -(Au, Ag)
Surface Phase on Substrate Conductivity

D. A. Tsukanov, M. V. Ryzhkova, and E. A. Borisenko p. 775  abstract

Study of the I–V Characteristics of Nanostructured Pd Films
on a Si Substrate after Vacuum Annealing

S. V. Tomilin, A. S. Yanovsky, O. A. Tomilina, and G. R. Mikaelyan p. 782  abstract

Different Properties of Aluminum Doped Zinc Oxide Nanostructured
Thin Films Prepared by Radio Frequency Magnetron Sputtering

Samina Bidmeshkipour and Nasser Shahtahmasebi p. 787  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

On an Exciton with a Spatially Separated Electron and Hole
in Quasi-Zero-Dimensional Semiconductor Nanosystems

S. I. Pokutnyi p.791  abstract

Charge Transport Mechanisms in Anisotype n-TiO₂/p-Si Heterostructures

A. I. Mostovyi, V. V. Brus, and P. D. Maryanchuk p. 799  abstract

Energy Relaxation of Nonequilibrium Electrons in a Nanotube Formed
by a Rolled-up Quantum Well

S. M. Seyid-Rzayeva p. 804  abstract

Photovoltaic Properties of GaAs:Be Nanowire Arrays

A. D. Bouravleuv, D. V. Beznasyuk, E. P. Gilstein, M. Tchernycheva,
A. De Luna Bugallo, L. Rigutti, L. Yu, Yu. Proskuryakov, I. V. Shtrom,
M. A. Timofeeva, Yu. B. Samsonenko, A. I. Khrebtov, and G. Cirlin p. 808  abstract

Carbon Systems

Comparative Characteristics of the Raman Scattering Spectra
of Graphene Films on Conductive and Semi-Insulating 6H-SiC Substrates

R. V. Konakova, O. F. Kolomys, O. B. Okhrimenko, V. V. Strelchuk,
E. Yu. Volkov, M. N. Grigoriev, A. M. Svetlichnyi, and O. B. Spiridonov p. 812  abstract

On the Theory of the Electronic States
of a “Quantum Dot–Graphene–SiO₂ + n⁺-Si Substrate” System

Z. Z. Alisultanov p. 815  abstract

Physics of Semiconductor Devices

Effects of High-Temperature AIN Buffer on the Microstructure of AlGaN/GaN HEMTs

S. Çörekçi, M. K. Öztürk, Hongbo Yu, M. Çakmak, S. Özçelik, and E. Özbay p. 820  abstract

Injection Photodiode Based on an n-CdS/p-CdTe Heterostructure

Sh. A. Mirsagatov, R. R. Kabulov, and M. A. Makhmudov p. 825  abstract

Temperature Dependence of the Threshold Current in Quantum-Well WGM Lasers (2.0–2.5 m)

A. N. Imenkov, V. V. Sherstnev, I. V. Kovalev, N. D. Il’inskaya,
O. Yu. Serebrennikova, R. Teissier, A. N. Baranov, and Yu. P. Yakovlev p. 831  abstract

MOS Solar Cells with Oxides Deposited by Sol-Gel Spin-Coating Techniques

Chia-Hong Huang, Chung-Cheng Chang, and Jung-Hui Tsai p. 835  abstract

Open-Circuit Voltage of an Illuminated Nonideal Heterojunction

V. A. Borschak, V. A. Smyntyna, Ie. V. Brytavskyi, A. A. Karpenko, and N. P. Zatovskaya p. 838  abstract

Influence of Optical Losses on the Dynamic Characteristics of Linear Arrays
of Near-Infrared Vertical-Cavity Surface-Emitting Lasers

S. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. G. Kuzmenkov, V. V. Stetsenko,
M. M. Pavlov, L. Ya. Karachinsky, I. I. Novikov, Yu. M. Zadiranov,
A. Yu. Egorov, and V. M. Ustinov p. 844  abstract

Fabrication, Treatment, and Testing of Materials and Structures

DLTS Study of Plastically Deformed Copper-Doped n-Type Germanium

S. A. Shevchenko and A. I. Kolyubakin p. 849  abstract

Phase Transformations during the Ag–In Plating and Bonding
of Vertical Diode Elements of Multijunction Solar Cells

N. P. Klochko, G. S. Khrypunov, N. D. Volkova, V. R. Kopach, V. N. Lyubov,
M. V. Kirichenko, A. V. Momotenko, N. M. Kharchenko, and V. A. Nikitin p. 856  abstract

Analysis of the Growth Dependences of Silicon-On-Sapphire Heteroepitaxy

D. A. Pavlov, P. A. Shilyaev, A. V. Pirogov, N. O. Krivulin, A. I. Bobrov, and M. D. Pegasina p. 865  abstract

Effect of Ion Treatment on the Properties of In₂O₃:Sn Films

P. N. Krylov, R. M. Zakirova, I. V. Fedotova, and F. Z. Gilmutdinov p.870  abstract

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